• 한국세라믹학회지
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• 제54권3호
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• pp.249-256
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• 2017

We design Ge-Al multilayer assemblies as anode materials for Li-ion batteries, in which Ge and Al thin films are alternately deposited by a radio sputtering method. By sandwiching Ge layers between Al layer, the cyclability, rate capability, and capacity of Ge are improved significantly. The success of the Ge-Al multilayer is attributed to the Al films. To maintain the integrity of electrical contact, Al acts as an elastic layer, which can expand or shrink with the Ge film upon lithiation or delithiation. In addition, the presence of the Al film on the surface can prevent direct contact of Ge and electrolyte, thereby reducing the growth of a SEI layer. Importantly, with high electrical and ionic conductivities, the Al film provides efficient electrical and ionic routes for electrons and Li-ions to access the Ge film, promoting a high specific capacity and high rate capability for Ge.

• 한국자기학회지
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• 제19권5호
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• pp.157-160
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• 2009

Ge 원자로 구성된 1차원 체인형태의 나노클러스터에 자성전이금속 Cr 및 Mn 원자를 치환 하였을 때 자성전이금속 원자사이의 자기적 상호작용을 제1원리의 범밀도함수법을 이용하여 계산하였다. 그 결과 Ge 원자와 전이금속 원자는 반강자성적인 상호작용을 하고 있으며, Ge-Ge원자 또한 반강자성 경향을 나타내었다. 이러한 자기 교환상호작용은 Ge 원자 여러 원자 층을 자화시켜 일어나고 있으며, 그 크기도 작지 않았다. 또한 자기 교환상호작용은 Ge 원자 수에 크게 의존하였다.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• 한국산학기술학회논문지
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• 제14권10호
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• pp.4962-4969
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• 2013

본 실험의 목적은 TSE-SPIR 지방소거기법과 GE-PROSET 지방소거기법을 비교하여 복부자기공명영상에서 최적의 T2 강조 지방소거기법을 평가하고자 한다. 자기공명영상 검사는 16채널 다중채널을 사용하여 1.5 T(Philips, Medical System, Achieva)기기로 수행하였다. 모든 영상은 TSE-SPIR과 GE-PROSET을 이용하여 축면상(axial plane)을 얻었다. TSE-SPIR과 GE-PROSET에 대한 후복막 지방의 평균 SNRs는 31.50, 4.15 이었으며, 장간막 지방에 대한 SNRs는 32.39, 7.03이었다. TSE-SPIR과 GE-PROSET에서 장과 후복막 지방, 장간막 지방의 CNRs는 152.69, 74.54 와 26.12, 68.78이었다. 장벽에 대한 묘출도는 TSE-SPIR(2.4), GE-PROSET(1.8)로 TSE-SPIR가 높게 나타났으며, 췌장벽(pancreas wall)에 대한 묘출도는 TSE-SPIR(1.90), GE-PROSET(2.80)로 GE-PROSET가 높게 나타났다. 결론적으로, T2 강조 지방소거 복부자기공명영상에서 GE-PROSET 지방소거기법 보다 TSE-SPIR 지방소거기법이 우위성 있은 평가를 얻었다.

• 한국분말재료학회지
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• 제9권6호
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• pp.422-432
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• 2002

Mechanically driven decomposition of intermetallics during mechanical milling(MM 1 was investigated. This process for Fe-Ce and Fe-Sn system was studied using conventional XRD, DSC, magnetization and alternative current susceptibility measurements. Mechanical alloying and milling form products of the following composition (in sequence of increasing Gecontent): $\alpha$(${\alpha}_1$) bcc solid solution, $\alpha$+$\beta$-phase ($Fe_{2-x}Ge$), $\beta$-phase, $\beta$+FeGe(B20), FeGE(B20), FeGe(B20)+$FeGe_2$,$FeGe_2$,$FeGe_2$+Ge, Ge. Incongruently melting intermetallics $Fe_6Ge_5$ and $Fe_2Ge_3$ decompose under milling. $Fe_6Ge_5$ produces mixture of $\hat{a}$-phase and FeGe(B20), $Fe_2Ge_3$ produces mixture of FeGe(B20) and $FeGe_2$ phases. These facts are in good agreement with the model that implies local melting as a mechanism of new phase for-mation during medchanical alloying. Stability of FeGe(B20) phase, which is also incongruently melting compound, is explained as a result of highest density of this phase in Fe-Ge system. Under mechanical milling (MM) in planetary ball mill, FeSn intermetallic decomposes with formation $Fe_5Sn_3$ and $FeSn_2$ phases, which have the biggest density among the phases of Fe-Sn system. If decomposition degree of FeSn is relatively small(<60%), milled powder shows superparamagnetic behavior at room temperature. For this case, magnetization curves can be fitted by superposition of two Langevin functions. particle sizes for ferromagnetic $Fe_5Sn_3$ phase determined from fitting parameters are in good agreement with crystalline sizes determined from XRD data and remiain approximately chageless during MM. The decomposition of FeSn is attributed to the effects of local temperature and local pressure produced by ball collisions.

• ETRI Journal
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• 제41권6호
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• 한국진공학회지
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• 제10권2호
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• pp.219-224
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• 2001

N형 InGaAs에 대한 Pd/Ge/Ti/Pt 오믹 접촉 특성을 조사하였다. $450^{\circ}C$까지의 급속 열처리에 의해 우수한 오믹 특성을 나타내어 $400^{\circ}C$, 10초의 급속 열처리 조건에서 최저 $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ 의 접촉 비저항을 나타내었다. 이는 열처리에 의해 생성된 Pd-Ge계 화합물의 형성 및 Ge의 InGaAs 표면으로의 확산과 관련이 있었다. 그러나 열처리 시간을 연장할 경우 접촉 비저항이 $low-10^5\; \Omega\textrm{cm}^2$로 약간 증가하였다. 고온 열처리 후에도 오믹 재료와 InGaAs의 평활한 계면을 유지하면서 우수한 오믹 특성을 나타내어, 화합물 반도체 소자의 오믹 접촉으로 충분히 응용 가능하다고 판단된다.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• 한국진공학회지
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• 제16권6호
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• pp.439-445
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• 2007

RF 및 고속 아날로그 특성 및 제조 공정의 용이성에 의하여 고속 유무선통신 및 초고주파 분야에서 많이 이용되고 있는 SiGe 집적회로에서, SiGe 박막 저항기의편차를 줄여 집적회로의 신뢰성을 높이는 것이 중요하다. 본 논문에서는 실리콘계 박막 저항기 제조 후 발생하는 불균일한 저항 값 분포의 원인 규명과 그 해결 방안에 대하여 고찰한다. SiGe 박막 저항기의 실리사이드가 존재하는 컨택 영역에서 Ti-B석출물의 영향으로 인하여 저항 값의 불균일성 발생하는데, 이를 최소화하기 위하여는 가능한 최대의 boron 이온을 주입할 필요가 있다. SiGe 저항기와 금속을 배선하기 위한 컨택 홀의 크기가 작을수록 SiGe 층 내에서 돌출부가 컨택 홀의 전체면적을 차지하게 될 확률이 커지게 되어 접촉저항이 비정상적으로 커질 확률 또한 높아지게 되므로, 돌출부가 생성되는 SiGe 저항기의 경우는 컨택 홀의 면적을 크게하여 SiGe 저항기의 편차를 개선하였다.