• Title/Summary/Keyword: 10GE

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Fabrication and Design of a SiGe MMIC Differential VCO for C-band WLAN Applications (C-band WLAN용 SiGe MMIC 차동형 전압제어발진기 설계 및 제작)

  • 박민기;고호정;채규성;김창우
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.767-770
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    • 2003
  • A SiGe HBT MMIC differential VCO has been developed for C-band wireless LAN applications. The VCO produces -6.4 dBm output power at 4.75 GHz. The VCO exhibits a 490 MHz tuning range with control voltage from 0.5 V to 2.5 V. The phase noise of the VCO exhibits -106.5 dBc/Hz at 1 MHz offset from the 4.75 GHz carrier. The total current consumption of the VCO is 10 mA at a supply voltage of 3 V.

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A Study on the Ge Substituted LAS Ceramics Using Metla Alkoxide (금속알콕사이드를 이용한 LAS계 내열세라믹스의 제조시 Ge 성분의 치환에 관한 연구)

  • 장성중;김형태;이응상
    • Journal of the Korean Ceramic Society
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    • v.32 no.11
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    • pp.1233-1240
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    • 1995
  • LAS system, which is difficult to be sintered, was densified by using the powder synthesized from metal alkoxides. Sinterability, thermal and mechanical properties were improved through synthesizing the complex oxide powder from the addition of Ge as an alkoxide. As a result, the synthesizing and sintering temperature of the LAS system lowered by about 10$0^{\circ}C$ and its modulus of rupture (MOR) increased twice higher compared to the sample from the oxide by the direct method.

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Effects of Various Chelating Agents on Accumulation of Germanium in Ginseng Adventitious Roots in Submerged Culture (킬레이트제가 액체배양 중 인삼 부정근의 게르마늄 축적에 미치는 영향)

  • Chang, Eun-Jung;Oh, Hoon-Il
    • Journal of Ginseng Research
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    • v.31 no.3
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    • pp.154-158
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    • 2007
  • In order to increase the content of germanium in ginseng adventitious roots, the effects of chelating agents on germanium content and root growth were investigated in the submerged cultures of ginseng adventitious roots. Chelating agents such as citric acid, oxalic acid, phosphoric acid, EDTA (Ethylenediamine tetraacetic acid) or EGTA (Ethylene glycol-bis $({\beta}-aminoethylether)-tetraacetic$ acid) were administrated in the submerged culture of ginseng root containing 50 ppm $GeO_2$. After 6 weeks of cultivation, fresh weight, germanium and saponin contents in the roots were analyzed. Among chelating agents, addition of 1.0mM phosphoric acid was found to be best for germanium accumulation. Under this condition, germanium content increased 1.4 times as compared to that of the control. The germanium content in the adventitious roots also increased with addition of EDTA or EGTA, while they inhibited the growth of ginseng adventitious root. Citric and oxalic acids were not effective for increasing germanium content in adventitious roots. As the results, it suggests that the phosphoric acid can be proved as the optimal agent for the enhancement of germanium accumulation in ginseng adventitious roots. These results can be served as a guideline for the mass production of ginseng adventitious roots containing germanium by large-scale production.

Evaluation of Multi-Level Memory Characteristics in Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 Cell Structure (Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 셀 구조의 다중준위 메모리 특성 평가 )

  • Jun-Hyeok Jo;Jun-Young Seo;Ju-Hee Lee;Ju-Yeong Park;Hyun-Yong Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.1
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    • pp.88-93
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    • 2024
  • To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

Effects of Dietary Garlic Extracts on Whole Body Amino Acid and Fatty Acid Composition, Muscle Free Amino Acid Profiles and Blood Plasma Changes in Juvenile Sterlet Sturgeon, Acipenser ruthenus

  • Lee, Dong-Hoon;Lim, Seong-Ryul;Ra, Chang-Six;Kim, Jeong-Dae
    • Asian-Australasian Journal of Animal Sciences
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    • v.25 no.10
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    • pp.1419-1429
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    • 2012
  • A series of studies were carried out to investigate the supplemental effects of dietary garlic extracts (GE) on whole body amino acids, whole body and muscle free amino acids, fatty acid composition and blood plasma changes in 6 month old juvenile sterlet sturgeon (Acipenser ruthenus). In the first experiment, fish with an average body weight of 59.6 g were randomly allotted to each of 10 tanks (two groups of five replicates, 20 fish/tank) and fed diets with (0.5%) or without (control) GE respectively, at the level of 2% of fish body weight per day for 5 wks. Whole body amino acid composition between the GE and control groups were not different (p>0.05). Among free amino acids in muscle, L-glutamic acid, L-alanine, L-valine, L-leucine and L-phenylalanine were significantly (p<0.05) higher in GE than in control. However, total whole body free amino acids were significantly lower in GE than in control (p<0.05). GE group showed higher EPA (C22:6n3) and DHA (C22:5n3) in their whole body than the other group (p<0.05). In the second experiment, the effects of dietary garlic extracts on blood plasma changes were investigated using 6 month old juvenile sterlet sturgeon averaging 56.5 g. Fish were randomly allotted to each of 2 tanks (300 fish/tank) and fed diets with (0.5%) or without (control) GE respectively, at the rate of 2% of body weight per day for 23 d. At the end of the feeding trial, blood was taken from the tail vein (n = 5, per group) at 1, 12, and 24 h after feeding, respectively. Blood plasma glucose, insulin and the other serological characteristics were also measured to assess postprandial status of the fish. Plasma glucose concentrations (mg/dl) between two groups (GE vs control) were significantly (p< 0.05) different at 1 (50.8 vs 62.4) and 24 h (57.6 vs 73.6) after feeding, respectively, while no significant difference (p>0.05) were noticed at 12 h (74.6 vs 73.0). Plasma insulin concentrations (${\mu}IU$/ml) between the two groups were significantly (p<0.05) different at 1 (10.56 vs 5.06) and 24 h (32.56 vs 2.96) after feeding. The present results suggested that dietary garlic extracts could increase dietary glucose utilization through the insulin secretion, which result in improved fish body quality and feed utilization by juvenile sterlet sturgeon.

Characteristics of Shallow $P^{+}$-n Junctions Including the FA Process after RTA (RTA 후 FA 공정을 포함한 $P^{+}$-n 박막 접합 특성)

  • Han, Myeong-Seok;Kim, Jae-Yeong;Lee, Chung-Geun;Hong, Sin-Nam
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.5
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    • pp.16-22
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    • 2002
  • This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

10Gbps Demultiplexer using SiGe HBT (SiGe HBT를 이용한 10Gbps 디멀티플렉서 설계)

  • 이상흥;강진영;송민규
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.4A
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    • pp.566-572
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    • 2000
  • In the receiver of optical communication systems, a demultiplexer converts to a single data stream with a highbit rate into several parallel data streams with a low bit rate. In this paper, we design a 1:4 demultiplexer using SiGe HBT with emitter size of 2x8um² The operation speed is 10Gbps, the rise and fall times of 20-80% are37ps and 36ps, respectively and the dissipation of power is 1.40W.

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Characteristics of Holographic Diffraction Grating Formation on $AS_{40}Se_{15}S_{35}Ge_{10}$ Thin Film with the Polarization State of Recording Beam (기록빔의 편광상태에 따른 $AS_{40}Se_{15}S_{35}Ge_{10}$ 박막에서 홀로그래피 회절격자형성 특성)

  • Park, Jeong-Il;Chung, Hong-Bay
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.9
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    • pp.423-428
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    • 2006
  • We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

The changed diffraction efficiency depend on annealing of amorphous chalcogenide films (비정질 칼코게나이드 박막의 열처리에 따른 회절효율 변화)

  • Lee, Ki-Nam;Yeo, Cheol-Ho;Sin, Kyung;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.590-593
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    • 2004
  • 본 논문에서는 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)박막과 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)/Ag(20nm)박막에 홀로그래피 격자를 형성시킨 후 Tg 온도$(240^{\circ}C)$를 기준으로 하여 유리질 천이온도(Tg) 온도 이하 $(190^{\circ}C)$와 이상$(270^{\circ}C)$에서 열처리 시킨 후의 회절효율 변화를 알아보았다. $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm) 박막의 경우 $190^{\circ}C$ : 50%, $240^{\circ}C$ : 약80%, $270^{\circ}C$ : 약 98%의 회절효율 감소가 일어났으며 $As_{40}Ge_{10}Se_{15}S_{35}$(300nm)/Ag(20nm)박막에서는 Tg 온도 이하 즉 $190^{\circ}C$, $240^{\circ}C$ 에서는 회절효율의 변화가 없었으나 Tg온도 이상인 $270^{\circ}C$에서는 약 1.5배 증가한 회절효율을 나타내었다.

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