• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.99-104
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• 1992

The permeability vs. temperature curve, the loss factor and the microstructure of a commercial Mn-Zn ferrites were investigated by X-ray diffractometer, SEM and LCR meter, where the additives, such as $SnO_{2}$ and $GeO_{2}$, were added to the main composition. Their wt% were 0.05, 0.3 and 1.0, respectively. When the content of additives increased, the SPM (Secondary Peak Maximum) of the permeability moved from $80^{\circ}C$ to below the room temperature. This movement, without the significant change of the microstructure, is because Sn and Ge, having the different ionic radius, were soluble in the matrix. There was no variation of the permeability with the frequency up to 100 kHz. And the loss factor showed the maximum value at 10 kHz.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.282-287
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• 1993

PLS 2GeV 선형가속기 진공계는 K6 가속단위까지 성공적으로 조립, 설치되어 있다. K3 가속단위까지는 이미 E3712형 클라이스트론에서 공급되는 70MW 극초단파 전력으로 진공계 길들이기 과정을 완료하였다. 약 50MW의 극초단파 전력을 인가한 상태에서, 현재 진공도는 L-형 가속관 중심에서 6.2$\times$10-8torr, 클라이스트론 출력창에서 7.3$\times$10-9torr를 각각 유지하고 있으며, 최종 도달압력은 점차적으로 향상되고 있는 중이다. 본 논문에서는 PLS 2 GeV 선형가속기 진공계에 대한 전기회로적 변환에 의한 모델링과 해석, 그리고 가속기 전반부에 관한 초기 성능 검증결과를 논의하고자 한다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.245-248
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• 2000

In this paper, we present a high-performance SiGe HBT's RF input impedance parameter extraction method. The SiGe HBT has emitter width of 0.5${\mu}{\textrm}{m}$ and length of 6${\mu}{\textrm}{m}$. S-parameter has been measured with the collector current of 1~3㎃ using on-wafer RF measuring system . The pre-calculation method was used in order to overcome the local minimum problem. This method enabled us to extract a RF(1~10㎓) input impedance parameter.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.17-22
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• 1993

본 논문은 포항가속기연구소에서 건설중인 PLS 2 GeV 선형가속기 진공계통의 설계에 관한 것이다. PLS 2GeV 선형가속기의 진공계통은 길이 3.07m인 42개의 가속관과 길이 약 400m의 도파관으로 구성되어 있다. 진공장치의 배치는 충분한 지역적 배기능력을 고려한 분산 배기방식으로 다지관 방식의 기계적 복잡성을 단순화하였다. 진공계는 가속관 중심과 도파관에서 5$\times$10-7Torr, 클라이스트론 출력장치에서 5$\times$10-8Torr까지 배기되도록 설계하였다. 주 진공펌프로는 가속관과 도파관 및 에너지 배가장치에 대하여 각각 용량이 60l/s와 120l/s인 sputter 이온펌프를 사용하기로 하였다.

• Applied Microscopy
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• v.45 no.1
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• pp.16-22
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• 2015

The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.103-103
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• 2009

본 논문에서는 기존의 GST(GeSbTe=2:2:5)와 비교하여 상변화 재료로서의 Ga 도핑된 $Ge_2Sb_2Te_5$의 가능성을 확인하고자 하였다. 실험에 사용된 Ga 도핑된 $Ge_2Sb_2Te_5$ 박막은 전통적 melt-quenching 방법에 의해 비정질로 제작된 벌크를 Thermal evaporation을 통하여 Si(100) 및 유리 (coming glass, 7059) 기판 위에 200nm의 두께로 증착하여 제작하였다. 각 박막의 상변화 특성은 여러 온도에서 열처리된 박막을 X-ray diffraction (XRD) 측정을 통하여 확인하였다. 각 조성 박막의 비정질-결정질 상변화속도 비교를 위하여 나노-펄스 스캐너 (nano-pulse scanner)를 사용하여 power; 1~17mW, pulse duration; 10~460ns 범위에서 박막의 상변화에 따른 반사도 차이를 측정 분석하였다. Ga의 도핑농도에 따른 전기적 특성 차이를 확인하기 위하여 4-point probe를 이용하여 박막의 면 저항을 측정하였고 또한 hall 측정을 통하여 박막의 흘 계수, 흘 농도 및 이동도를 확인하고 Ga가 상전이에 미치는 영향에 대하여 분석하였다.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.239-247
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• 1995

Chalcogenide glasses with compositions of Ge10Se90-xTex(X=0~50 at.%) were prepared in order to investigate the effects of Te substitution on the transmission characteristics of Ge-Se glasses in the 8~12 ${\mu}{\textrm}{m}$ wavelength region. Absorption coefficients were observed to decrease with Te addition, indicating the improved transmission capabilities of Ge-Se-Te glasses as compared to binary Ge-Se glasses. XRD analysis of crystallized glasses suggested the formation of weaker Se-Te and/or Te-Te bonds with addition of Te substituting for Se in stronger Se-Se bonds. Incorporation of Te in excess of 20at% resulted in the formation of hexagonal Te phases when crystallized. It is speculated that the presence of Te-Te bonds with highly metallic bond character resulted in the enhanced crystallization tendencies of glasses. Fromation of Te-rich chains through gradual replacement of Se-Se with Se-Te and/or Te-Te bonds was further supported by decreases in glass transition and crystallization temperatures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.7-15
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• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.