• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.7
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• pp.944-950
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• 1993

Diodes and GaAs have been commonly used in a mixer design until recently. However, diodes are not preferred to use at the front-end of DBS receiver due to the conversion loss large noise. HEMT has larger conversion gain and better noise characteristics comparing with GaAs MESFET. This paper describes the design procedure, structure, and performance of a mixer, utilizaing HEMT designed by OKI Co. . A mixer configuration in which the local oscillator(LO) signal is applied to the gate is used. When the LO power is 0.01 dBm, the conversion gain of 3.7dB is obtained at IF and the 3 dB bandwidth is 400MMz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.9 s.100
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• pp.941-948
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• 2005

In this paper, we have proposed a Ultra-Wideband slot notch antenna by using a semi-circular extension. The proposed antenna cover the entire UWB band(3.1${\~}$10.6 GHz) and notch out the IEEE 802.1la frequency band(5.15${\~}$5.825 GHz) by inserting a $\lambda$/4 length slot into the patch. A prototype antenna was fabricated on FR-4( ${\epsilon}_r$ =4.4, substrate thickness=0.8 mm) and measured for VSWR characteristics. The measured notched frequency variations versus frequency for different slot length. The path loss and group delay were measured. The proposed antenna also show a good gain flatness(1.9 dBi) except the IEEE 802.1la frequency band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.105-111
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• 2004

In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.54-59
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• 2013

This letter presents a shorted-stub tapped branch-line coupler for dual-band applications. In the new design, a shorted stub is used to realize 90 phase change at two frequencies. Closed-form design equations are derived to find the characteristic impedance and electrical length of the proposed branch lines using the ABCD-matrix. To verify the design concept, a microstrip coupler operating at 0.8 and 1.85 GHz is fabricated and measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1098-1106
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• 2007

This paper presents active antenna diplexers implemented into an ultra-wideband CPW(Coplanar Waveguide) fed monopole antennas. The proposed active antenna diplexer is designed to direct interconnect the output port of a wideband antenna to the input port of two active(HEMT) devices, where the impedance matching conditions of the proposed active integrated antenna are optimized by adjusting CPW(Coplanar Waveguide) feed line to be the length of 1/20 $\lambda_0$(@5.8 GHz) in planar type wideband antenna. The measured bandwidth of the active integrated antenna shows the range from 2.0 GHz to 3.1 GHz and from 5.25 GHz to 5.9 GHz. The measured peak gains are 17.0 dB at 2.4 GHz and 15.0 dB at 5.5 GHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.1
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• pp.103-107
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• 2009

In this paper, we designed and implemented a dual band chip antenna for WLAN, which contains within the small LAN card contrary to the enternal AP(Access Point) antenna. Limiting about the antenna size, we used dielectrics of high permittivity. Totally considering problems of demand-supply, price and characteristics, we used that relative dielectrics of ceramic is 9.8 and the thickness is 3.5mm and 5mm. Ceramic antenna can be used not only triple mode of IEEE 802.11.a,g and b but also broadband. The frequency bands have wideband characteristics of 2.4~2.5GHz and 4.9~5.85GHz and relatively constant performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.632-636
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• 2006

It is needed to use the beam scanning to control the cell coverage of the base station considering operation conditions, season, time period, radiation character and mobility of customers and vehicles for varied wireless communication service and quality improvement. This paper proposes a mobile antenna system which can obtain the characteristics of the beam scanning by controlling the directivity depending on the operation condition. Radiation block is made of 2 sub-array of $1\times3$ patched antennas for ITS of 5.8GHZ bandwidth with the gain of 13dBi, and of 2 sub-array of single patched antenna for WiBro of 2.3GHZ bandwidth with the gain of 12dBi. RF module is made of a switch, an amplifier, a PAD, a 3-Bit phase shifter, and a power divider. The system is able to control the beam tilting with electronic methode by using 3-bit phase shifter$(45^{\circ},\;90^{\circ},\;180^{\circ})$.

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.352-359
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• 2003

In this paper, we designed the bluetooth receiver using the microstrip bandpass filter and the high gain low noise amplifier with the 0.2$\mu\textrm{m}$ CMOS technology. A cascode inverter is adopted to implement the low noise amplifier and is one stage amplifier with a voltage reference and without the choke inductor. The designed 2.4GHz LNA was achieved a power gain of 18dB, a noise figure of 2.8dB, and the power consumption of 255mW at 2.5V power supply. Also, the microstrip receiver bandpass filter was designed that the center frequency was 2.45GHz, the bandwidth was 4% and the insert attenuation was -1.9dB. When the microstrip bandpass filter and LNA was simulated together the power gain was 16.3dB.

• Journal of IKEEE
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• v.26 no.4
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• pp.693-704
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• 2022

5G service uses mid-band (n78) than existing mobile communication frequencies, so it is necessary to improve 5G coverage by utilizing low-band frequencies below 2 GHz. To this end, the application of Dynamic Spectrum Sharing technology of LTE and 5G-NR system using most of the low-band frequencies is required. In this paper, signaling overhead factors for DSS application and RF issues for terminal implementation are derived, and signaling overhead ratios from the respective perspectives of 5G-NR and LTE for the 1.8GHz band (50MHz width) that can utilize wide-bandwidth among low-band frequencies are estimated. Also handset RF issues were analyzed. Based on the analysis results, if DSS technology using low band is applied, it is expected that excellent 5G service quality can be provided due to 5G coverage improvement when LTE traffic quickly migrates to 5G-NR.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.55-60
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• 2014

For an high speed communication, a 40GHz VCO was implemented using a 0.11um standard CMOS technology. The mm-wave VCO was designed by a LC type using a spiral inductor, and a simplified architecture with buffers and a smart biasing technique were used to get a high performance. The frequency range of the proposed VCO is 34~40GHz which is suitable for mm-Wave communication system. It has an output power of -16dBm and 16% tuning range. And the phase noise is -100.33dBc/Hz at 1MHz offset at 38GHz fundamental frequency. The total power consumption of VCO including PADs is 16.8mW with 1.2V supply voltage. The VCO achieves the FOMT of -183.8dBc/Hz which is better than previous VOCs.