• Korean Journal of Materials Research
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• v.21 no.12
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• pp.660-665
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• 2011

1-D ZnO nanowires have been attractive for their peculiar properties and easy growth at relatively low temperature. The length, diameter, and density of ZnO nanowires were determined by the several synthetic parameters, such as PEI concentration, growth time, temperature, and zinc salt concentration. The ZnO nanowires were grown on the <001> oriented seed layer using the hydrothermal process with zinc nitrate and HMTA (hexamethylenetetramine) and their structure and optical properties were characterized. The morphology, length and diameter of the nanowires were strongly affected by the relative and/or absolute concentration of $Zn^{2+}$ and $OH^{-1}$ and the hydrothermal temperature. When the concentrations of the zinc nitrate HMTA were the same as 0.015 M, the length and diameter of the nanowires were $1.97{\mu}m$ and $0.07{\mu}m$, respectively, and the aspect ratio was 28.1 with the preferred orientation along the <001> direction. XRD and TEM results showed a high crystallinity of the ZnO nanowires. Optical measurement revealed that ZnO nanowires emitted intensive stimulated UV at 376 nm without showing visible emission related to oxygen defects.

• Journal of Hydrogen and New Energy
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• v.28 no.2
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• pp.129-136
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• 2017

Characteristics of $ZrO_2$ felt supported Cu/Zn catalysts have been investigated for the production of hydrogen via methanol steam reforming. Cu and Zn in different weight percent were loaded using wet impregnation over $ZrO_2$ felt support. The catalysts were characterized with BET and FE-SEM. The performance of these synthesized catalysts were investigated at SCR=1.5, $GHSV=2000h^{-1}$, temperature=$300{\sim}400^{\circ}C$, and pressure=2.5~19.5 barA. The results showed that the $Cu^{32.5}Zn^{7.5}ZrO_2$ catalyst was most active in terms of methanol conversion and hydrogen production. The methanol conversion in steam reforming of methanol was 84.6% at 19.5 barA and furnace $400^{\circ}C$ over $Cu^{32.5}Zn^{7.5}ZrO_2$ catalyst. The catalysts prepared using $ZrO_2$ felt show higher reactor temperature than the pellet type catalyst at same furnace temperature.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1743-1746
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• 2010

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.296-301
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• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.18-26
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• 2000

In this paper, piezoelectric transducer was theoretically analyzed to fabricate high frequency piezoelectric transducer with broadband characteristics. Piezoelectric transducer have been fabricated with 3.825${\mu}m$ ZnO film on Pt/Sapphire(0001), and its appilicability of transducer was confirmed with analyzing theoretical and experimental frequency characteristic. The resonance frequency was detected at the frequency of 827.47MHz corresponding to the half-wavelength frequency of ZnO thin film. Insertion loss was almost -50dB. The minimum insertion loss agrees with simulation analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.531-537
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• 2006

A micromachined piezoelectric microspeaker was fabricated with a highly c-axis oriented ZnO thin film on a silicon-nitride film having compressive residual stress. When it was measured 3 mm away from the microspeaker in open field, the largest sound pressure level produced by the fabricated microspeaker was about 91 dB at around 2.9 kHz for the applied voltage of $6\;V_{peak-to-peak}$. The key technologies to these successful results were as follows: (1) the usage of a wrinkled diaphragm caused by the high compressive residual stress of silicon-nitride thin film, (2) the usage of the highly c-axis oriented ZnO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.543-546
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• 2011

We studied sintering temperature to enhance the piezoelectric properties of $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$+0.01wt%ZnO (hereafter NKN-LST+ZnO) lead free piezoelectric ceramics. The synthesis and sintering method were the conventional solid state reaction method and sintering was executed at $1,080\sim1,120^{\circ}C$. We found that NKN-LST+ZnO ceramics at optimal sintering temperature showed the improved piezoelectric properties at the optimal sintering temperature. The NKN-LST+ZnO ceramics show good performance with piezoelectric constant $d_{33}$= 153 pC/N sintered at $1,090^{\circ}C$. The results reveal that NKN-LST+ZnO ceramics are promising candidate materials for lead-free piezoelectric application.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3453-3458
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• 2011

The $Mg_xZn_{1-x}O$ thin films with the various content ratio ranging from 0 to 0.4 were prepared by sol-gel spincoating method. To investigate the effects of content ratio on the structural and optical properties of the $Mg_xZn_{1-x}O$ thin films, scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out. With increase in the content ratio, the grain size of the $Mg_xZn_{1-x}O$ thin films was increased, however, at the content ratio above 0.2, MgO particles with cubic structure were formed on the surface of the $Mg_xZn_{1-x}O$ thin films, indicating that the Mg content exceeded its solubility limit in the thin films. The residual stress of the $Mg_xZn_{1-x}O$ thin films is increased with increase in the Mg mole fraction. In the PL investigations, the bandgap and the activation energy of the $Mg_xZn_{1-x}O$ thin films was increased with the Mg mole fraction.