• Title/Summary/Keyword: 0.18 ${\mu}m$ CMOS

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Scalable RSA public-key cryptography processor based on CIOS Montgomery modular multiplication Algorithm (CIOS 몽고메리 모듈러 곱셈 알고리즘 기반 Scalable RSA 공개키 암호 프로세서)

  • Cho, Wook-Lae;Shin, Kyung-Wook
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.1
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    • pp.100-108
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    • 2018
  • This paper describes a design of scalable RSA public-key cryptography processor supporting four key lengths of 512/1,024/2,048/3,072 bits. The modular multiplier that is a core arithmetic block for RSA crypto-system was designed with 32-bit datapath, which is based on the CIOS (Coarsely Integrated Operand Scanning) Montgomery modular multiplication algorithm. The modular exponentiation was implemented by using L-R binary exponentiation algorithm. The scalable RSA crypto-processor was verified by FPGA implementation using Virtex-5 device, and it takes 456,051/3,496347/26,011,947/88,112,770 clock cycles for RSA computation for the key lengths of 512/1,024/2,048/3,072 bits. The RSA crypto-processor synthesized with a $0.18{\mu}m$ CMOS cell library occupies 10,672 gate equivalent (GE) and a memory bank of $6{\times}3,072$ bits. The estimated maximum clock frequency is 147 MHz, and the RSA decryption takes 3.1/23.8/177/599.4 msec for key lengths of 512/1,024/2,048/3,072 bits.

A Crypto-processor Supporting Multiple Block Cipher Algorithms (다중 블록 암호 알고리듬을 지원하는 암호 프로세서)

  • Cho, Wook-Lae;Kim, Ki-Bbeum;Bae, Gi-Chur;Shin, Kyung-Wook
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.11
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    • pp.2093-2099
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    • 2016
  • This paper describes a design of crypto-processor that supports multiple block cipher algorithms of PRESENT, ARIA, and AES. The crypto-processor integrates three cores that are PRmo (PRESENT with mode of operation), AR_AS (ARIA_AES), and AES-16b. The PRmo core implementing 64-bit block cipher PRESENT supports key length 80-bit and 128-bit, and four modes of operation including ECB, CBC, OFB, and CTR. The AR_AS core supporting key length 128-bit and 256-bit integrates two 128-bit block ciphers ARIA and AES into a single data-path by utilizing resource sharing technique. The AES-16b core supporting key length 128-bit implements AES with a reduced data-path of 16-bit for minimizing hardware. Each crypto-core contains its own on-the-fly key scheduler, and consecutive blocks of plaintext/ciphertext can be processed without reloading key. The crypto-processor was verified by FPGA implementation. The crypto-processor implemented with a $0.18{\mu}m$ CMOS cell library occupies 54,500 gate equivalents (GEs), and it can operate with 55 MHz clock frequency.

Third order Sigma-Delta Modulator with Delayed Feed-forward Path for Low-power Operation (저전력 동작을 위한 지연된 피드-포워드 경로를 갖는 3차 시그마-델타 변조기)

  • Lee, Minwoong;Lee, Jongyeol
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.10
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    • pp.57-63
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    • 2014
  • This paper proposes an architecture of $3^{rd}$ order SDM(Sigma-Delta Modulator) with delayed feed-forward path in order to reduce the power consumption and area. The proposed SDM improve the architecture of conventional $3^{rd}$ order SDM which consists of two integrators. The proposed architecture can increase the coefficient values of first stage doubly by inserting the delayed feed-forward path. Accordingly, compared with the conventional architecture, the capacitor value($C_I$) of first integrator is reduced by half. Thus, because the load capacitance of first integrator became the half of original value, the output current of first op-amp is reduced as 51% and the capacitance area of first integrator is reduced as 48%. Therefore, the proposed method can optimize the power and the area. The proposed architecture in this paper is simulated under conditions which are supply voltage of 1.8V, input signal 1Vpp/1KHz, signal bandwidth of 24KHz and sampling frequency of 2.8224MHz in the 0.18um CMOS process. The simulation results are SNR(Signal to Noise Ratio) of 88.9dB and ENOB(Effective Number of Bits) of 14-bits. The total power consumption of the proposed SDM is $180{\mu}W$.

A Digital Input Class-D Audio Amplifier (디지털 입력 시그마-델타 변조 기반의 D급 오디오 증폭기)

  • Jo, Jun-Gi;Noh, Jin-Ho;Jeong, Tae-Seong;Yoo, Chang-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.11
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    • pp.6-12
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    • 2010
  • A sigma-delta modulator based class-D audio amplifier is presented. Parallel digital input is serialized to two-bit output by a fourth-order digital sigma-delta noise shaper. The output of the digital sigma-delta noise shaper is applied to a fourth-order analog sigma-delta modulator whose three-level output drives power switches. The pulse density modulated (PDM) output of the power switches is low-pass filtered by an LC-filter. The PDM output of the power switches is fed back to the input of the analog sigma-delta modulator. The first integrator of the analog sigma-delta modulator is a hybrid of continuous-time (CT) and switched-capacitor (SC) integrator. While the sampled input is applied to SC path, the continuous-time feedback signal is applied to CT path to suppress the noise of the PDM output. The class-D audio amplifier is fabricated in a standard $0.13-{\mu}m$ CMOS process and operates for the signal bandwidth from 100-Hz to 20-kHz. With 4-${\Omega}$ load, the maximum output power is 18.3-mW. The total harmonic distortion plus noise and dynamic range are 0.035-% and 80-dB, respectively. The modulator consumes 457-uW from 1.2-V power supply.

Highly Robust AHHVSCR-Based ESD Protection Circuit

  • Song, Bo Bae;Koo, Yong Seo
    • ETRI Journal
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    • v.38 no.2
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    • pp.272-279
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    • 2016
  • In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

A Fully Digital Automatic Gain Control System with Wide Dynamic Range Power Detectors for DVB-S2 Application (넓은 동적 영역의 파워 검출기를 이용한 DVB-S2용 디지털 자동 이득 제어 시스템)

  • Pu, Young-Gun;Park, Joon-Sung;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.9
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    • pp.58-67
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    • 2009
  • This paper presents a fully digital gain control system with a new high bandwidth and wide dynamic range power detector for DVB-S2 application. Because the peak-to-average power ratio (PAPR) of DVB-S2 system is so high and the settling time requirement is so stringent, the conventional closed-loop analog gain control scheme cannot be used. The digital gain control is necessary for the robust gain control and the direct digital interface with the baseband modem. Also, it has several advantages over the analog gain control in terms of the settling time and insensitivity to the process, voltage and temperature variation. In order to have a wide gain range with fine step resolution, a new AGC system is proposed. The system is composed of high-bandwidth digital VGAs, wide dynamic range power detectors with RMS detector, low power SAR type ADC, and a digital gain controller. To reduce the power consumption and chip area, only one SAR type ADC is used, and its input is time-interleaved based on four power detectors. Simulation and measurement results show that the new AGC system converges with gain error less than 0.25 dB to the desired level within $10{\mu}s$. It is implemented in a $0.18{\mu}m$ CMOS process. The measurement results of the proposed IF AGC system exhibit 80-dB gain range with 0.25-dB resolution, 8 nV/$\sqrt{Hz}$ input referred noise, and 5-dBm $IIP_3$ at 60-mW power consumption. The power detector shows the 35dB dynamic range for 100 MHz input.

A 900 MHz Zero-IF RF Transceiver for IEEE 802.15.4g SUN OFDM Systems

  • Kim, Changwan;Lee, Seungsik;Choi, Sangsung
    • ETRI Journal
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    • v.36 no.3
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    • pp.352-360
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    • 2014
  • This paper presents a 900 MHz zero-IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ${\Delta}{\Sigma}$ fractional-N frequency synthesizer. In the RF front end, re-use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current-driven passive mixer in Rx and voltage-mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty-cycle in local oscillator clocks. The overall Rx-baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a $0.18{\mu}$ CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of -2 dBm, a sensitivity level of -103 dBm at 100 Kbps with PER < 1%, an Rx input $P_{1dB}$ of -11 dBm, and an Rx input IP3 of -2.3 dBm.

A Multi-purpose Fingerprint Readout Circuit Embedding Physiological Signal Detection

  • Eom, Won-Jin;Kim, Sung-Woo;Park, Kyeonghwan;Bien, Franklin;Kim, Jae Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.793-799
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    • 2016
  • A multi-purpose sensor interface that provides dual-mode operation of fingerprint sensing and physiological signal detection is presented. The dual-mode sensing capability is achieved by utilizing inter-pixel shielding patterns as capacitive amplifier's input electrodes. A prototype readout circuit including a fingerprint panel for feasibility verification was fabricated in a $0.18{\mu}m$ CMOS process. A single-channel readout circuit was implemented and multiplexed to scan two-dimensional fingerprint pixels, where adaptive calibration capability against pixel-capacitance variations was also implemented. Feasibility of the proposed multi-purpose interface was experimentally verified keeping low-power consumption less than 1.9 mW under a 3.3 V supply.

Area and Power Efficient VLSI Architecture for Two Dimensional 16-point Modified Gate Diffusion Input Discrete Cosine Transform

  • Thiruveni, M.;Shanthi, D.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.4
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    • pp.497-505
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    • 2016
  • The two-dimensional (2D) Discrete Cosine Transform (DCT) is used widely in image and video processing systems. The perception of human visualization permits us to design approximate rather than exact DCT. In this paper, we propose a digital implementation of 16-point approximate 2D DCT architecture based on one-dimensional (1D) DCT and Modified Gate Diffusion Input (MGDI) technique. The 8-point 1D Approximate DCT architecture requires only 12 additions for realization in digital VLSI. Additions can be performed using the proposed 8 transistor (8T) MGDI Full Adder which reduces 2 transistors than the existing 10 transistor (10T) MGDI Full Adder. The Approximate MGDI 2D DCT using 8T MGDI Full adders is simulated in Tanner SPICE for $0.18{\mu}m$ CMOS process technology at 100MHZ.The simulation result shows that 13.9% of area and 15.08 % of power is reduced in the 8-point approximate 2D DCT, 10.63 % of area and 15.48% of power is reduced in case of 16-point approximate 2D DCT using 8 Transistor MGDI Full Adder than 10 Transistor MGDI Full Adder. The proposed architecture enhances results in terms of hardware complexity, regularity and modularity with a little compromise in accuracy.

A 95% accurate EEG-connectome Processor for a Mental Health Monitoring System

  • Kim, Hyunki;Song, Kiseok;Roh, Taehwan;Yoo, Hoi-Jun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.4
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    • pp.436-442
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    • 2016
  • An electroencephalogram (EEG)-connectome processor to monitor and diagnose mental health is proposed. From 19-channel EEG signals, the proposed processor determines whether the mental state is healthy or unhealthy by extracting significant features from EEG signals and classifying them. Connectome approach is adopted for the best diagnosis accuracy, and synchronization likelihood (SL) is chosen as the connectome feature. Before computing SL, reconstruction optimizer (ReOpt) block compensates some parameters, resulting in improved accuracy. During SL calculation, a sparse matrix inscription (SMI) scheme is proposed to reduce the memory size to 1/24. From the calculated SL information, a small world feature extractor (SWFE) reduces the memory size to 1/29. Finally, using SLs or small word features, radial basis function (RBF) kernel-based support vector machine (SVM) diagnoses user's mental health condition. For RBF kernels, look-up-tables (LUTs) are used to replace the floating-point operations, decreasing the required operation by 54%. Consequently, The EEG-connectome processor improves the diagnosis accuracy from 89% to 95% in Alzheimer's disease case. The proposed processor occupies $3.8mm^2$ and consumes 1.71 mW with $0.18{\mu}m$ CMOS technology.