• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.30-36
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• 2000

SmCo films were deposited on Si(100) substrate by a Nd-YAG pulsed laser ablation of the targets of Sm$\_$100-x/Co$\_$x/ (73$\leq$x$\leq$93) at the substrate temperature of 600∼700$\^{C}$ and the laser beam energy density of Q switching mode or fixed Q mode. The magnetic properties of the films obtained from the Q switching mode exhibited a 4 $\pi$ Ms of 5200∼7700 Gauss, iHc of 190-250 Oe, and 4$\pi$M$\_$r//4$\pi$M$\_$s/ of 0.4∼0.74, respectively, while the fixed Q mode gave the magnetic properties of corresponding films of a 4$\pi$M$\_$r//4$\pi$M$\_$s/ = 0.32∼0.91 and iHc of 430-6290 Oe, respectively. The fixed Q mode gave the better magnetic properties of the SmCo films which seems to be due to a formation of magnetically hard minor phases in droplet of Sm-rich intermetallics. However, the resultant rough surface of the SmCo films is a problem to be solved by a continued study.

• Journal of the Optical Society of Korea
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• v.11 no.1
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• pp.44-48
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• 2007

A two-stage gain-clamped erbium doped fiber amplifier (GC-EDFA) using a pump laser diode and a 16 channel wavelength division multiplexing (WDM) with 0.8 nm spacing in C band of $1,545{\sim}1,560nm$ wavelength is experimentally demonstrated for a burst packet mode optical switching system.

• Journal of IKEEE
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• v.17 no.3
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• pp.229-233
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• 2013

We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.150-155
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• 2009

Hysteresis current regulator has been used widely because of its simple principle and structure. However, when the current band width is too narrow or the applied voltage is relatively too high, the switching frequency increases abruptly and it makes large amount of heat. In this study, for single phase current control, the hysteresis current control is executed by adding 0 mode state and comparing the slope of the current reference, which decreases the switching frequency so much and make the current control much stable. These were proved with computer simulations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.633-640
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• 2004

We have studied color tracking of a fringe-field driven homogenously aligned nematic liquid crystal (LC) cell with negative dielectric anisotropy and compared it with other devices such as the twisted nematic(TN) and in-plane switching(IPS) modes. According to studies, the TN device shows bluish color at grey scale and even at a low retardation cell it cannot avoid color tracking. The authentic IPS device having cell retardation value of 0.23 ${\mu}{\textrm}{m}$ also shows bluish white color. However, the FFS device shows excellent color tracking characteristics even at high retardation value of the cell while keeping high transmittance and greenish white.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.283-288
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• 2004

In case while modulation index (M) is more than 0.7, the spectrum of motor voltage and current of a conventional two-phase SRP scheme are not reduced considerably. To solve the problems of a conventional two-phase SRP, this paper proposes a two-phase SRP(DZSRP) with double zero vector mode which zero vector is selected as V(111) in case of $M\;\geqq\;0.7$, and zero vector is selected as V(000) if M < 0.7. For the validity of the proposed method, a 16 bit micro-controller C167 was used and the experiments were conducted with the 1.5kw induction motor under load condition. And the experimental results show that the switching noise spectrum for all the M are spread to a wide band area.

• Journal of Power Electronics
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• v.16 no.6
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• pp.1991-2004
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• 2016

An LC filter is required to reduce the output current ripple in the auxiliary resonant snubber inverter (ARSI) for high-performance applications. However, if the traditional control method is used in the ARSI with LC filter, then unnecessary current flows in the auxiliary circuit. In addressing this problem, a novel load-adaptive control that fully uses the filter inductor current ripple to realize the soft-switching of the main switches is proposed. Compared with the traditional control implemented in the ARSI with LC filter, the proposed control can reduce the required auxiliary current, contributing to higher efficiency and DC-link voltage utilization. In this study, the detailed circuit operation in the light load mode (LLM) and the heavy load mode (HLM) considering the inductor current ripple is described. The characteristics of the improved ARSI are expressed mathematically. A prototype with 200 kHz switching frequency, 80 V DC voltage, and 8 A maximum output current was developed to verify the effectiveness of the improved ARSI. The proposed ARSI was found to successfully operate in the LLM and HLM, achieving zero-voltage switching (ZVS) of the main switches and zero-current switching (ZCS) of the auxiliary switches from zero load to full load. The DC-link voltage utilization of the proposed control is 0.758, which is 0.022 higher than that of the traditional control. The peak efficiency is 91.75% at 8 A output current for the proposed control, higher than 89.73% for the traditional control. Meanwhile, the carrier harmonics is reduced from -44 dB to -66 dB through the addition of the LC filter.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.295-300
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• 2001

A variety of high voltage DC power supplies employing the high frequency inverter are difficult to achieve soft switching considering a quick response and no overshoot response under the wide load variation ranges which are used in medical-use x-ray high voltage generator from 20kV to 150kV in the output voltage and from 0.5mA to 1250mA, respectively. The authors develops soft switching high voltage DC power supply designed for x-ray power generator applications, which uses series resonant inverter circuit topology with a multistage voltage multiplier instead of a conventional high voltage diode rectifier connected to the second-side of a high-voltage transformer with a large turn ratio. A constant on-time dual mode frequency control scheme operating under a principle of zero-current soft switching commutation is described. Introducing the multistage voltage multiplier, the secondary transformer turn-numbers and stray capacitance of high-voltage transformer is effective to be greatly reduced. It is proved that the proposed high-voltage converter topology with dual mode frequency modulation mode control scheme is able to be the transient response and steady-state performance in high-voltage x-ray tube load. The effectiveness of this high voltage converter is evaluated and discussed on the basis of simulation analysis and observed data in experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.311-318
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• 2004

We have studied electro-optic characteristics as a function of pretilt angle ($\theta$$_{p}$) in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. When $\theta$$_{p}$ is increased from 0$^{\circ}$ to 20$^{\circ}$, a maximum transmittance and an operating voltage are obviously decreased. In the viewing angle characteristics, the cell with low pretilt angle has a wide region for the contrast ratio greater than 5 and has a best luminance uniformity. Therefore, in the FFS device, a low pretilt angle is favored for high transmittance and wide viewing angle.gle.