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검색결과 3,225건 처리시간 0.023초

급속열처리가 다결정 CdTe 박막의 물성에 미치는 효과에 관한 연구 (Effects of rapid thermal annealing on Physical properties of polycrystalline CdTe thin films)

  • 조영아;이용혁;윤종구;오경희;염근영;신성호;박광자
    • 한국진공학회지
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    • 제5권4호
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    • pp.348-353
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    • 1996
  • CdS/ITO/glass 기판위에 다결정 CdTe 박막을 진공증착법으로 제조한 후 급속열처리하여 열처리 온도와 가스분위기가 CdTe의 박막의 물성과 전지특성에 미치는 효과를 연구하였다. $450^{\circ}C$에서 $550^{\circ}C$까지 공기중 급속열처리한 경우 박막은 EDX 조성분석결과 화학양론비를 유지하였고 표면성분비는 Cd-rich 상태였으나 전처리후 저저항 contact 제조에 유리한 Te-rich 상태로 변화되었다. TEM과 micro-EDX 결과 급속열처리 전후 모두 CdTe는 주상정구조가 관찰되었고 열처리동안 CdTe내로 확산된 S의 양이 로열처리와 비교하여 매우 적음을 알 수 있었다. 급속열처리 온도가 가스분위기 조건 중 공기 중에서 $550^{\circ}C$ 열처리하였을 때 가장 우수한 태양전지효율을 나타내었다.

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토코페롤에서 유도된 기능성 화장품용의 새로운 계면 활성제 (Polyoxyethylene Tocopheryl Ethers; A Series of Novel Surfactants from Tocopherol for Functional Cosmetics)

  • 김영대;김창규
    • 대한화장품학회지
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    • 제18권1호
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    • pp.1-41
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    • 1992
  • A new and unique class of nonionic surfactants was synthesized by reacting biological a-tocopherol with ethylene oxide for functional cosmetics. The structures were confirmed by Hl-UMR, FT-lR, TLC and elemental analysis. POV and conjugated diene value study for EPO showed POE(n)TE had antioxidative effect similar to tocopheryl acetate Protective effect on cell membrane in photohemolysis of POE(5)TE, POE(10)TE and POE(18)TE were slightly lower than tocopherol but higher than nonoxynol-12, and POE(10)TE had UV absorption power comparable with tocopherol and homosalate. Biological activity of the hydrophobic group of the new surfactants make them unique and different from those of conventional nonionic surfactants Systematic safety evaluations of POE(n)TEs on the skin and eye proved that they are as safe as tocopherol. The results of physicochemical study showed POE(10)TE had the lowest CMC value, POE(18)TE had the maximum surface tension reduction and the highest foam volume and POE(n)TEs had various HLB values by the degree of ethoxylation. The test resul Is of technological and practical applications of these surfactants for cosmetics showed some POE(n)TEs were superior to conventional surfactants. POE(5)TE in W/O emulsions, POE(10)TE and POE(12)TE in O/W emulsions, POE(12)TE in dispersions, POE(18)TE in solubilizations and POE(50)TE in gelations were shown to be excellent which was considered due to the structural characteristic and formation of liquid crystals of POE(n)TEs. By the development and applications of these excel lent multi-functional surfactants, innovative functional cosmetics were successfully formulated.

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Neutron-irradiated effect on the thermoelectric properties of Bi2Te3-based thermoelectric leg

  • Huanyu Zhao;Kai Liu;Zhiheng Xu;Yunpeng Liu;Xiaobin Tang
    • Nuclear Engineering and Technology
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    • 제55권8호
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    • pp.3080-3087
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    • 2023
  • Thermoelectric (TE) materials working in radioisotope thermoelectric generators are irradiated by neutrons throughout its service; thus, investigating the neutron irradiation stability of TE devices is necessary. Herein, the influence of neutron irradiation with fluences of 4.56 × 1010 and 1 × 1013 n/cm2 by pulsed neutron reactor on the electrical and thermal transport properties of n-type Bi2Te2.7Se0.3 and p-type Bi0.5Sb1.5Te3 thermoelectric alloys prepared by cold-pressing and molding is investigated. After neutron irradiation, the properties of thermoelectric materials fluctuate, which is related to the material type and irradiation fluence. Different from p-type thermoelectric materials, neutron irradiation has a positive effect on n-type Bi2Te2.7Se0.3 materials. This result might be due to the increase of carrier mobility and the optimization of electrical conductivity. Afterward, the effects of p-type and n-type TE devices with different treatments on the output performance of TE devices are further discussed. The positive and negative effects caused by irradiation can cancel each other to a certain extent. For TE devices paired with p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 thermoelectric legs, the generated power and conversion efficiency are stable after neutron irradiation.

Electrochemical Characterization of Multilayered CdTe/PSS Films Prepared by Electrostatic Self-assembly Method

  • Rabbani, Mohammad Mahbub;Yeum, Jeong Hyun;Kim, Jungsoo;Nam, Dae-Geun;Oh, Weontae
    • Transactions on Electrical and Electronic Materials
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    • 제15권5호
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    • pp.257-261
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    • 2014
  • Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).

Si과 Ge 기판에의 Bi2Te3 박막 성장 특성 분석

  • 김승연;고창훈;이근섭
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.233-233
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    • 2012
  • 위상절연체(Bi2Te3)와의 격자상수 불일치 비율이 서로 다른 Si (111)와 Ge (111) 기판을 선택하여 Bi3Te3 박막의 성장 조건을 찾고 이에 따른 특성 분석을 수행하였다. 시료 제작은 초고진공 분위기에서 MBE를 이용하였고, AFM, XRD와 XPS로 각각 구조적 변화, 결정 상태 및 화학적 상태를 분석하였다. 우선 Si 위에 형성된 Bi2Te3의 경우, 초기 박막이 형성된 후, 증착 시간이 증가함에 따라 섬(island)모양의 구조물들이 step edge 부분에 분포되는 모습을 AFM 이미지에서 확인하였다. 형성된 박막의 스텝 단차는 약 1 nm 또는 이 값의 정수 배였고, 이것은 Bi2Te3 unit cell의 quintuple layer (QL) 값과 일치하였다. 또한 측정된 XRD pattern으로 Bi2Te3가 hexagonal 구조의 c-축에 따라 결정성이 이루어졌음을 확인할 수 있었다. XPS 스펙트럼에서는 Bi 4f가 높은 에너지 방향으로 2.3 eV, Te 3d는 낮은 에너지 방향으로 약 0.7 eV 만큼 구속 에너지의 화학적 이동이 나타남을 알 수 있었다. 이러한 결과는 Si 위에 Bi2Te3 박막이 높은 결정성을 가지고 형성되었다는 것을 의미한다. 또한 Si (111) 기판보다 Bi2Te3 결정과 격자상수 불일치의 비율이 상대적으로 작은 Ge (111)을 기판으로 하여 Bi2Te3 박막을 성장시켜 두 표면에서의 박막 성장의 특성을 비교, 논의할 것이다.

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MOCVD 법에 의한 CdTe/Si 박막성장 (MOCVD of CdTe thin films on Si substrates)

  • 김광천;권성도;최지환;김현재;김진상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.451-451
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    • 2009
  • CdTe는 에너지밴드갭이 1.45eV인 직접천이헝 II-VI 화합물 반도체로서 높은 광홉수율과 가시광 영역의 에너지밴드캡으로 태양전지, x-선 검출기 등에 널리 사용되고 있다. 본 연구에서는 Metal Organic Chemical Vapor Deposition (MOCVD)으로 Si 기판위에 CdTe 에피 박막을 성장 하고자 하였다. Cd, Te의 금속유기 화합물로는 Dimethylcadmium(DmCd)과 Diisopropyltellurium(DIPTe)을 사용하였다. 기판으로는 Si 을 사용하였으며 박막성장 온도를 $360^{\circ}C\;{\sim}\;500^{\circ}C$로 제어하여 에피박막이 형성되는 조건을 얻고자 하였다. $360^{\circ}C$, $450^{\circ}C$에서 성장된 CdTe박막은 다양한 방향이 존재하는 다결정 구조 였으며 $500^{\circ}C$의 경우 단결정 에피 박막 성장이 이루어졌음을 확인하였다. 본 연구를 통한 CdTe 에피박막은 기존의 열증착 등으로 제조되는 다결정 CdTe 박막과 비교하여 높은 에너지변환 효율을 얻을 것으로 기대된다.

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ReRAM응용을 위한 Ge2Sb2Te5와 Ge8Sb2Te11 기반 MIM구조 박막의 전기적 특성 연구 (A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM)

  • 장휘종;공헌;여종빈;이현용
    • 한국전기전자재료학회논문지
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    • 제30권3호
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    • pp.144-147
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    • 2017
  • In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

수직배양된 고집적 CdTe-Si 나노구조체의 제조방법 (Facile Synthesis of Vertically Aligned CdTe-Si Nanostructures with High Density)

  • 임진호;황성환;정현성
    • 한국전기전자재료학회논문지
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    • 제30권3호
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    • pp.185-191
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    • 2017
  • Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to $25{\mu}m$ by adjusting etching time. The Si nanowire galvanic displacement reaction in $HTeO_2{^+}$ electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in $Ag_2Te-Si$ nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.

대면적 박막 태양전지 적용을 위한 CdTe 박막의 화학적기계적연마 공정 특성 (Chemical Mechanical Polishing Characteristics of CdTe Thin Films for Application to Large-area Thin Film Solar Cell)

  • 양정태;신상헌;이우선
    • 전기학회논문지
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    • 제58권6호
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    • pp.1146-1150
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    • 2009
  • Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

급속응고기술에 의한 p-type 25% $Bi_{2}Te_{3}+75% Sb_{2}Te_{3}$ 열간압축제의 열전특성 (Thermoelectric Properties of p-type 25% $Bi_{2}Te_{3}+75%Sb_{2}Te_{3}$ Materials Prepared by Rapid Solidification Process and Hot Pressing)

  • 김익수
    • 한국분말재료학회지
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    • 제3권4호
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    • pp.246-252
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    • 1996
  • $Bi_{2}Te_{3}-Sb_{2}Te_{3}$, $Bi_{2}Te_{3}-Bi_{2}Se_{3}$ solid solutions are of great interest as materials for thermoelectric energy conversion. One of the key technologies to ensure the efficiency of thermoelectric device is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification followed by hot pressing was investigated to produce homogeneous thermoelectric materials. Characteristics of the materials were examined with XRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as excess Te quantity and hot pressing temperature. Quenched ribbons are very brittle and consisted of homogeneous $Bi_{2}Te_{3}$, $Sb_{2}Te_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 3.073$\times$$10^{-3}K^{-4}$. The bending strength of the material, hot pressed at 45$0^{\circ}C$, was 5.87 kgf/${mm}^2$.

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