• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1236-1242
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• 2014

In this work, a D-band VCO(Voltage Controlled Oscillator) has been developed in a 65-nm CMOS technology. The circuit was designed based on push-push mechanism. The output oscillation frequency of the fabricated VCO varied from 152.7 GHz to 165.8 GHz, and the measured output power was from -17.3 dBm to -8.7 dBm. A phase noise of -90.9 dBc/Hz is achieved at 10 MHz offset. The chip size of the circuit is $470{\mu}m{\times}360{\mu}m$ including the probing pads.

• Journal of Advanced Navigation Technology
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• v.8 no.1
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• pp.57-65
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• 2004

In this paper, keeping pace with light weight, pocket-size, lower-price, we design VCO(Voltage Controlled Oscillator) X/Ku band for using at public RD(Radar Detector) to apply to controlled voltage on base in transistor which used as a oscillator, without using varactor diode in part of VCO tuner. As a result of simulation, we conclude VCO could be have 110 MHz by controlled voltage 4.25 V to 4.80 V and show its output 9.63 dBm at operating frequency, 11.46 GHz, and its phase noise -107.2 dBc at 1 MHz offset frequency. So it turned out suitable performance for commercial use.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.1
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• pp.110-114
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• 2008

In this paper, high efficient class F power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. Dual band amplifier is 32.65dBm output power, gain 11dB and PAE 36% at the 2.14GHz, 7dB gain at the 5.2GHz. Design of a dual band class F power amplifier using harmonic control circuit. The measured are 9.9dB gain, 30dBm output power and PAE 55% at the 2.14GHz, 11.7dB gain at the 5.2GHz. This paper is being used the load-pull method and it maximizes output power and it is using the only one transistor in the paper. As a result, this research will obtain a dual band high PAE power amplifier.

• The Journal of the Korea Contents Association
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• v.7 no.11
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• pp.102-110
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• 2007

In this paper, a portable RFID reader which operated in 900MHz UHF band is designed and fabricated and the characteristics of the manufactured portable RFID reader is analyzed through measurement. Analysis of measurements results is achieved based on EPC Class 0 standards that proposed by EPC Global. The proposed RFID reader communicate with tags about 11kbps speed, and have 20 dBm for its maximum RF output power. The proposed portable RFID reader can recognize maximum 68 tags per second, and when reader's output power is 20 dBms, maximum recognition distance is 30cm. And the total size of implemented RFID reader is $71mm{\times}55mm$, that is the maximum 90%, minimum 14% reduced size compared with marketed product.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.44 no.3
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• pp.212-217
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• 2016

The S-band receiver for Low Earth Orbit satellite is designed and fabricated as engineering model. Demodulator is implemented by using FPGA for extension of demodulator method. The receiver consists of RF Block, Digital demodulator and Power stage and has a Doppler tracking function to compensate a frequency shift that occur on the operation. The measured results of fabricated receiver show BER of less than $1.0{\times}10^{-6}$ at -110dBm RF input power and equipped a frequency tracking of ${\pm}100KHz$ relative to the center frequency. TID test was satisfied with the results of the test criterion is 10krad.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.107-113
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• 2014

A VCO (Voltage Controlled Oscillator) and a divide-by-4 high speed frequency divider are implemented using 65nm CMOS technology for 60GHz wireless communication system. The mm-wave VCO was designed by NMOS cross-coupled LC type using current source. The architecture of the divide-by-4 high speed frequency divider is differential ILFD (Injection Locking Frequency Divider) with varactor to control frequency range. The frequency divider also uses current sources to get good phase noise characteristics. The measured results show that the VCO has 64.36~67.68GHz tuning range and the frequency divider divides the VCO output by 4 exactly. The high output power of 5.47~5.97dBm from the frequency divider is measured. The phase noise of the VCO including the frequency divider are -77.17dBc/Hz at 1MHz and -110.83dBc/Hz at 10MHz offset frequency. The power consumption including VCO is 38.4mW with 1.2V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.1
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• pp.105-110
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• 2005

In this paper, a new technique to reduce the phase noise in microwave oscillators is proposed using the resonant characteristics of the Photonic Bandgap(PBG). We applied PBG structure to ground of the microstrip line resonator with the low Q(Quality factor). Therefore, we improved about 10 dBc in contrast to phase noise characteristic of the conventional microstrip line oscillator at 2.4 GHz ＠ 100 MHz offset. Output power is 7.09 dBm.

• ETRI Journal
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• v.29 no.4
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• pp.536-538
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• 2007

We propose and describe the fabrication of a linear power amplifier (LPA) using a new analog feedforward method for the IMT-2000 frequency band (2,110-2,170 MHz). The proposed analog feedforward circuit, which operates without a pilot tone or a microprocessor, is a small and simple structure. When the output power of the fabricated LPA is about 44 dBm for a two-tone input signal in the IMT-2000 frequency band, the magnitude of the intermodulation signals is below -60 dBc and the power efficiency is about 7%. In comparison to the fabricated main amplifier, the magnitude of the third intermodulation signal decreases over 24 dB in the IMT-2000 frequency band.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.235-238
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• 2001

단일 단말기로부터 멀티 통신이 가능하게 됨에 따라 광대역 또는 듀얼대역에서 사용되는 RF 소자 개발이 중요시되고 있다. 그러므로 소형, 저 비용의 멀티대역 VCO(Voltage Controlled Oscillator)개발이 요구된다. 본 논문에서 GSM/DCN 대역에서 사용 가능한 듀얼밴드 VCO을 설계하였다. 하나의 발진부, 듀얼 공진부, 완충증폭기, 스위치회로로 구성되었으며, 위상 보정 기법을 이용하여 각 밴드에 대한 발진 조건을 만족시키므로 사용 부품의 수를 줄일 수 있어 저 비용, 소형화, 낮은 위상잡음(phase noise)을 얻을 수 있다. 설계된 듀얼 VCO는 GSM 대역에서 -110dBc/Hz(100kHz offset) 이하의 위상 잡음과 DCN 대역에서 -108dBc/Hz(100kHz offset)의 위상 특성을 보인다. 출력전력은 0$\pm$3dBm이며 소비전력 7mA로 만족할만한 성능을 보인다.