• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.61-67
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• 2005

In this study a new growing method of silicon nitride whiskers in the inside of large pores made intentionally during the sintering was conducted. Pore size, pore vol%, and nitrogen pressure were used as experimental variables. Silicon nitride whiskers were well grown in the inside of pores with low pore vol% range from 14 to 27 but not grown with high pore vol% such as 39 and 50. On the other hand, pore size and nitrogen pressure did not have any influence on the whisker growth. Therefore the most important factor to grow silicon nitride whisker in the inside of large pores during sintering was to make pores isolated or closed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.67-71
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• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.33-40
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• 1997

본 연구에서는 에폭시 기지에 충진재료 SiC 분말과 SiC 휘스커 AIN분말을 사용하 여 이들 충진재의 함량 및 형상이 복합재료의 열전도도 열팽창계수 및 유전상수에 미치는 영향을 조사하였다. 복합재료의 열전도도는 세라믹 충진재의부피분율이 증가함에 따라 비선 형적으로 증가하였으며 휘스커 형상의 충진재를 첨가한 복합재료의 열전도도는 구형 분말의 충진재를 사용한 복합재료에 비해 높게 관찰 되었다. 이러한 현상은 충진재로 사용한 휘스 커가 구형 분말 충진재에 비하여 동일 부피분율에서 상호 접촉할수 있는 확률이 높기 때문 인 것으로 추정된다. 열팽창 계수는 충진제의 부피분율이 증가함에 따라 감소 하는 경향을 보였으며 충진재의 형상이 휘스커 형상인 경우가 구형에 비하여 감소되는 정도가 크게 관찰 되었다.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1197-1202
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• 2002

In order to develope the porous $K_2Ti_6O_13$ whisker preform with good strength, the pore characteristics and compressive strength were investigated as a function of spark plasma sintering temperature. As a result, high porous whisker preform were successfully fabricated by sintering at 900∼950${\circ}C$ for 10 min under a pressure of 40 MPa, heating rate of 50${\circ}C$/min and on-off pulse type of 12:2. The whisker preform prepared under above optimum condition showed relatively high compressive strength of 174∼266 MPa, despite of high porosity ranging from 15% to 37%. This improvement in strength was considered to be mainly due to the spark-plasma discharges and the self-heating action between whiskers. The compressive strength of whisker preform, fabricated at sintering temperature less than 900${\circ}C$, showed 80∼100 MPa. This is low strength level less than one half times compared with whisker preform fabricated at 900∼950${\circ}C$. The whisker preform fabricated at 1000${\circ}C$ showed the highest compressive strength of 523 MPa, but resulted in low porosity of ∼5%. Based on above results, it was considered that spark plasma sintering was an effective method for developing high strength and porosity of whisker preform.

• Electrical & Electronic Materials
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• v.5 no.2
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• pp.182-188
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• 1992

코디에라이트 그라스 세라믹은 다충 IC 기관과 IC 팩키지용 그라스 세라믹의 재료로 크게 각광을 받고 있다. 보강용 휘스커량과 열처리 온도는 시료의 경도와 이성에 직접적인 영향을 미치며 경도와 인성은 휘스커량과 열처리 온도에 따라 증가하였다. 약 15 vol.%의 휘스커를 포함한 시료를 950.deg.C로 열처리 하였을 때에 경도나 인성 같은 기계적 특성이 가장 좋았다.

• The Journal of the Convergence on Culture Technology
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• v.4 no.2
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• pp.211-216
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• 2018

Separation technology combining adsorption and membrane is expected to be applied in many fields such as water treatment. In this fusion technique, a functional carbon membrane having a carbon whisker grown on the surface of the membrane was developed to inhibit membrane fouling, which is a problem in the membrane separation process. In this study, to elucidate the mechanism of manufacturing the functional carbon membrane, the membrane was pretreated with the polymer latex of each mixing ratio and the membrane was formed by the CVD (Chemical Vapor Deposition) method. The membrane was analyzed by scanning electron microscope (SEM), CHN analyzer (Elemental Analyzer), and X-ray diffraction (XRD). As a result, the diameter and density of carbon whiskers were higher in case of polyvinyl di-chloride (PVdC): polyvinyl chloride (PVC) = 4.5: 55. It seems possible to control the diameter and density of the carbon whiskers according to the hydrogen content of the polymer latex.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.118-124
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• 2004

The properties of AlN made by carbothermal reaction depend on the starting materials, quantity of liquid, the liquid-vapor phase reaction, the N$_2$ flow rate, and the reaction temperature. AlN whisker was synthesized by the VLS and VS methods. Solid ${\alpha}$-A1$_2$O$_3$(AES-11) was carbothermally reduced with carbon black in a high-purity N$_2$ atmosphere with AlF$_3$ to cause whisker grown and additional aluminum liquid to increase whisker yield. Aluminum nitride was perfectly formed at reaction temperatures of 1600$^{\circ}C$. At reaction temperature higher than 1600$^{\circ}C$ the aluminum nitride was completely formed, while the composition remains unaffected. Needle-shaped whiskers formed best at 1600$^{\circ}C$ while higher temperatures disrupted whisker formation. Adding 0 to 15 wt% aluminum to the synthesis favorably affects the microstructure for formation of needle-shaped AlN whisker. Additions over 15 wt% degraded formation of AlN whisker.

• Journal of the Korean Ceramic Society
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• v.41 no.7
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• pp.518-527
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• 2004

In this study, SiC whiskers were grown in porous alumina substrate in order to enhance the filtering efficiency, performance, and durability by controlling pore morphology. This experiment was performed by Chemical Vapor Infiltration (CVI) in order to obtain the whiskers on the inside of pores as well as on the surface of porous the A1$_2$O$_3$ substrate. The deposition behavior was changed remarkably with the deposition position, temperature, and input gas ratio. First, the mean diameter of whisker was decreased as the position of observation moved into the inside of substrate due to the reactant gas depletion effect'. Second, the deposition temperature caused the changes of the deposition type such as debris, whiskers and films and the change in morphology affect the various properties. When SiC films were deposited. the gas permeability and the specific surface area decreased. However, the whisker showed the opposite result. The whiskers increase not only the specific surface area and minimizing pressure drop but also mechanical strength. Therefore it is expected that the porous alumina body which deposited the SiC whisker is the promising material for the filter trapping the particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.50-50
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• 2001