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Growth of silicon nitride whiskers using tailored pores  

Kim, Chang-Sam (Multifunctional Ceramic Research Center, KIST)
Han, Kyong-Sop (Multifunctional Ceramic Research Center, KIST)
Kim, Shin-Woo (Department of Materials Engineering, Hoseo University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.15, no.2, 2005 , pp. 61-67 More about this Journal
Abstract
In this study a new growing method of silicon nitride whiskers in the inside of large pores made intentionally during the sintering was conducted. Pore size, pore vol%, and nitrogen pressure were used as experimental variables. Silicon nitride whiskers were well grown in the inside of pores with low pore vol% range from 14 to 27 but not grown with high pore vol% such as 39 and 50. On the other hand, pore size and nitrogen pressure did not have any influence on the whisker growth. Therefore the most important factor to grow silicon nitride whisker in the inside of large pores during sintering was to make pores isolated or closed.
Keywords
Silicon nitride whiskers; Pore volume; Isolated pore; Nitrogen pressure; Sintering;
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