• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.173-174
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• 2008

페로브스카이트 구조의 (Ba,Sr,Ca)$TiO_3$ 분말에 $Dy_2O_3$ 불순물을 첨가하여 첨가량에 따른 영향을 연구하였다. 시편의 제작은 Screen-printing을 이용하여 후막으로 제작하였으며, 구조적인 특성과 전기적인 특성을 관찰하였다. XRD 회절 분석을 통하여 $Dy_2O_3$가 첨가된 모든 시편에서 이차상이 없는 전형적인 페로브스카이트 구조를 나타내었다. 시편의 미세구조를 관찰한 결과 grain size는 $Dy_2O_3$ 첨가량이 증가 할수록 감소하였으며, 기공은 증가하는 것을 알 수 있었다. 후막의 두께는 $Dy_2O_3$ 첨가량에 영향을 받지 않았으며 평균 두께는 $69{\mu}m$이었다. 큐리 온도는 $Dy_2O_3$ 첨가량에 따라 감소하였으며, 유전 손실은 상온 이상에서 1%이하로 크게 감소하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.198-199
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• 2008

페로브스카이트 구조의 (Ba,Sr,Ca)$TiO_3$ 분말에 $Y_2O_3$ 불순물을 첨가하여 첨가량에 따른 영향을 연구하였다. 시편의 제작은 Screen-printing을 이용하여 후막으로 제작하였으며, 구조적인 특성과 함께 유전적 특성을 관찰하였다. XRD 회절 운석을 통하여 $Y_2O_3$ 가 첨가된 모든 시편에서 전형적인 페로브스카이트 구조를 나타내는것을 알 수 있었다. 시편의 미세구조를 관찰한 결과 grain size 는 $Y_2O_3$ 첨가량이 증가 할수록 감소하였으며, 기공은 증가하는 것을 알 수 있었다. 후막의 두께는 $Y_2O_3$ 첨가량에 영향을 받지 않았으며 평균 두께는 $60{\mu}m$이었다. 유전상수는 $Y_2O_3$ 첨가량에 따라 감소하였으며, 유전손실은 모든 시편에서 1%이하의 양호한 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.73-76
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• 2009

ZnBo이 첨가된 (Ba,Sr)$TiO_3$ 후막을 이용한 planner capacitor의 전기적 특성을 조사하였다. 후막은 알루미나 기판에 스크린 프린팅기법에 의해서 제작되었고 $1200^{\circ}C$의 온도에서 소결하였다. 출발 물질인 BST의 저온 소결을 위해서 ZnBO를 첨가하였다. ZnBO가 1, 3, 5 wt% 첨가된 경우 소결온도가 $1200^{\circ}C$의 낮은 온도에서 소결되는 것을 확인했으며 ZnBO의 첨가랑이 증가함에 따라서 유전율은 감소하고 유전손실는 증가 하는 현상이 나타났다. 1, 3, 5 wt%의 ZnBO가 첨가된 (Ba,Sr)$TiO_3$는 각각 756, 624, 554의 유전율를 보였다. 또한 ZnBO의 양이 증가함에 따라서 누설전류가 감소되는 것을 확인하였고, ZnBO의 첨가가 grain의 성장과 density가 증가되어 누설전류의 양이 감소하게 되는 것으로 분석되었다.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.1
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• pp.13-18
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• 1997

바인다로서 에폭시 수지와 전도성 금속 충전물로서 은분을 그리고 기타 첨가물을 사용하여 패이스트를 제조하고 전도성 후막을 형성한후 이에대한 열화특성으 연구하였다. 후막의 열화특서은 열과 습도에 대한 내구성 평가로써 250$\pm$5$^{\circ}C$의 solder에 의한 solder dipping test 85$^{\circ}C$~-4$0^{\circ}C$의 cycle을 200회실시하여 저항값의 변화를 관찰하는 heat cycle test 95% 상대습도 및 $65^{\circ}C$에서 500시간동안 유지시키는 humidity resistance test를 실시하 였다. 열화시험후의 전기 저항값의 변화는 페이스트에 사용된 은분의 특성에 의존함을 알수 있었다. 사용된 은분의 입도가 작아질수록 즉 비표면적이 커질수록 열화시험 이전의 저항값 도 컸을뿐 아니라 열화의 정도도 증가함을 알수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.806-808
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• 2004

본 연구에서는 MEMS 공정에 의해 제작된 실리콘 멤브레인 위에 스크린 프린팅법을 이용하여 압전 후막을 제작, 그 특성을 관찰하였다. 실리콘 웨이퍼의 후면을 각각 다른 4가지의 크기로 식각하여 멤브레인을 제작하였다. 제작된 멤브레인 위에 하부전극 Ag-Pd를 스크린 프린팅법으로 형성하고, 그 위에 압전 후막을 스크린 프린팅하여 열처리 하였다. 제작된 압전 후막위에 MFM(Metal-Ferroelectric-Metal)구조의 액츄에이터를 제작하기위해 상부전극으로 Pt를 스퍼터링으로 증착하였다. 제작된 마이크로 액츄에이터는 SEM(Scanning Electron Microscope)으로 구조분석하고, RT66A와 MTI2000으로 동작특성을 해석 하였다.

• Journal of the Korean Electrochemical Society
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• v.9 no.4
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• pp.141-150
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• 2006

Nanocrystalline CoW thin/thick film alloys were electodeposited from citrate baths to investigate the influences of metal ion concentration, current density and solution pH on chemical composition, current efficiency, residual stress, surface morphology, and microstructure of the film. Deposit W (tungsten) content in CoW thin/thick film increased with increasing W ion concentration, current density, and solution pH in the plating bath. It was observed that residual stress in CoW thin/thick film decreased with increasing W ion concentration and solution pH. CoW thin film exhibited mixed phases of hop Co [(100) and (002)] and hcp $Co_3W$ [(002) and (201)] at W ion concentration with 0.02 to 0.08 M. The microstructure of CoW thin film at W ion concentration of 0.1 to 0.2 M was close to amorphous phase. The dominant phases were found to be hop Co (002) and hop $Co_3W$ [(200), (002) and (201)] at the current densities of 5, 10, 25, and $100mA{\cdot}cm^{-2}$ CoW thin film at the current densities of 50 and $75mA{\cdot}cm^{-2}$ was close to amorphous phase. At solution pH 8.7, CoW thin film exhibited hcp Co (002) and hop $Co_3W$ [(200), (002) and (201)]. Below solution pH 8.7, CoW thin film exhibited amorphous microstructure. The optimum electrodeposition conditions for CoW thin/thick film were found to be W ion concentration of 0.08 M, current density of $10mA{\cdot}cm^{-2}$, and solution pH 8.7.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.411-416
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• 2010

In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.65-70
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• 2015

A study on thermal properties for a single-layer metal and two-layer composites was investigated for the heat-sink application. For the single-layer metal, an aluminum alloy (Al6061) was selected. A screen printed aluminum nitride (AlN) layer on the Al6061 substrate was chosen for the two-layer composites. The thermal conductivity of the sample was determined from the thermal diffusivity measured by the light flash analysis (LFA), specific heat and density. Measured thermal property values were compared to calculated values using the data from the references. The thermal conductivity of composites with screen printed AlN layer on the Al6061 substrate decreased linearly with increasing the thickness of AlN layer. Measured values of the thermal conductivity for composites with $53{\mu}m$ and $163{\mu}m$ thick AlN layers were $114.1W/m{\cdot}K$ and $72.3W/m{\cdot}K$, respectively. In particular, the thermal conductivity of the screen-printed AlN layer was demonstrated by appling the rule of mixture in view point of thermal resistivity. Measured values of the thermal conductivity for AlN layers with the thickness of $53{\mu}m$ and $163{\mu}m$ showed $9.35W/m{\cdot}K$ and $12.40W/m{\cdot}K$, respectively.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.912-918
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• 2002

Ni-Mn-Co-Fe oxide thick films were coated on an alumina substrate by screening printing technique. The microstructure and electrical properties of the thick films, as a function of composition and sintering temperature, were investigated. The components of the NTC thick films sintered at 1150${\circ}C$ were distributed homogeneously. On the other hand, in the case of the NTC thick films sintered at 1200 and 1250${\circ}C$, Co element was distributed homogeneously, but Ni, Mn and Fe elements were distributed heterogeneously, resulting in the formation of Ni rich and Mn-Fe rich regions. All the thick film NTC thermistors prepared showed a linear relationship between log resistance (log R) and the reciprocal of absolute temperature (1/T), indicative of NTC characteristics. At a given NiO and $Mn_3O_4$ content, the resistance, B constant and activation energy of $(Ni_{1.0}Mn_{1.0}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) and $(Ni_{0.75}Mn_{1.25}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) thermistors increased with increasing $Fe_2O_3$ content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.83-90
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• 2020

The effect of substrate surface roughness and sintering temperature on the adhesion strength of Ag-based thick film conductors formed on AlN substrates with excellent thermal conductivity was studied. The adhesion strength of the thick-film conductor manufactured using an AlN substrate having a surface roughness (R_a) of 0.5 was higher than that of a thick-film conductor manufactured using a substrate having a surface roughness greater or smaller than this. In the case of a substrate with a surface roughness of less than 0.5, the contact area between the Ag thick film conductor and the substrate was relatively smaller than that of a substrate with a surface roughness of 0.5, resulting in a lower adhesive strength. On the other hand, when a substrate having a surface roughness of more than 0.5 was used, it was found that the conductor film was not completely adhered to the substrate, and as a result, it was found that the adhesive strength was small. In addition, it was found that the surface smoothness of the Ag-based thick film conductor film obtained by sintering at 850℃ was the best compared to the smoothness of the conductor film obtained by sintering at different sintering temperatures, and as a result, it was found that the adhesive strength of the conductor film was the highest.