• Title/Summary/Keyword: 후막

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Structural properties of PZT multilayer thick films of improved densification (PZT 후막의 치밀성 향상에 따른 PZT 다층 후막의 구조적 특성)

  • Yun, Sang-Eun;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07d
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    • pp.2211-2212
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    • 2006
  • Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

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Structural properties of PZT multilayer thick films of improved densification (PZT 후막의 치밀성 향상에 따른 PZT 다층 후막의 구조적 특성)

  • Yun, Sang-Eun;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.579-580
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    • 2006
  • Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) Precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately 60fm. And the densification of the PZT thick films increased with increasing the number of sol coatings.

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The Design and fabrication of K-Band Bandpass Filters Using the Photoimageable Thick Film Technology (후막 리소그라피 공정을 이용한 K-밴드용 대역통과 여파기 설계 및 제작)

  • Song, Hee-Seok;Park, Kyu-Ho;Lee, Young-Shin;Park, Sung-Dae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.689-692
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    • 2003
  • 본 논문에서는 개방된 양 끝이 Loading 캐패시턴스로 연결된 새로운 행태의 1/2 파장 공진기를 이용해서 3단 대역통과 여파기를 설계, 제작하였다. 제안한 공진기의 전파지연효과(Slow-Wave Effect)때문에, 넓은 상향저지대역을 갖으며, 사이즈(Size)가 축소된 협대역 여파기 설계가 가능하다. 설계한 대역통과 여파기는 미세라인 구현이 가능한 후막 리소그라피 공정 기술을 이용하여 제작하였다.

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A Study of Output Characteristics of Pressure Sensor based on Arrangement Pattern of Gages (후막저항의 기하학적 위치에 따른 압력센서의 출력특성 고찰)

  • Lee, Seong-Jae;Park, Ha-Young;Kim, Jae-Sung;Yoo, Jae-Tack;Min, Nam-Ki
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1497-1499
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    • 2002
  • 본 논문에서는 세라믹 다이어프램식 압력센서를 설계하기 전에 세라믹 다이어프램의 변위에 대한 최적 조건을 확립하기 위해 세라믹의 기계적 특성, 다이어프램의 두께와 직경 등을 변화시키면서 중심부와 변곡점 부근에서 압력에 대한 다이어프램의 변위를 시뮬레이션 하였으며 결과를 이용하여 세라믹 다이어프램을 이용하고 후막저항을 센싱 부분으로 하여 4가지 형태의 기하학적인 출력특성을 고찰하였다.

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Physical Properties of Silicon and Nitrogen Contained DLC Coatings Prepared by PCVD (PCVD법에 의해 제작한 실리콘 및 질소 함유 DLC 박막의 물성 평가)

  • Lee, Gyeong-Hwang;Yang, Ji-Hun;Jeong, Jae-In
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.108-109
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    • 2012
  • DLC 박막은 고경도 및 저마찰의 우수한 물리적 특성을 갖는 것으로 널리 알려져 다양한 산업분야에 적용이 되고 있다. 또한, 그 응용 분야 확대를 위해 DLC 박막의 후막화, 대면적 균일처리, 경제성 확보 등의 연구 노력이 지속되고 있다. 특히, DLC 박막은 높은 내부응력에 의해 후막화가 어렵고, 탄소와 수소의 화학적 결합에 의한 고형 물질로 내열성이 다른 경질코팅 물질 보다 취약하다는 단점을 갖고 있다. 본 연구는 DLC 박막의 내부응력 완화를 위해 실리콘 및 질소 원소를 함유하여 박막을 제작하고, 제작 공정 조건이 박막의 물성에 미치는 영향을 연구하였다.

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CO gas sensing characteristics of ZnO and ZnO-CuO thick films prepared by acquous precipitation (액상침전법으로 제조된 ZnO와 ZnO-CuO후막의 일산화탄소 감응특성)

  • 전석택;최우성;백승철
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.925-932
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    • 1996
  • Using the d.c. 2-probe method, we have examined the temperature dependence of CO gas sensitivity of pure ZnO and ZnO CuO thick films prepared by the acqueous precipitation. At 200ppm CO gas, pure ZnO thick film shows the maximum sensitivity of -6.5 at 300.deg. C. On the other hand, the maximum sensitivity of 1-5 mol% and 10-15 mol% CuO added ZnO thick films are 2.8-2.5 and 1.6, respectively. Therefore, the sensitivity of pure ZnO thick film is about three times larger than those of ZnO-CuO thick films. We suggest that the promotion of maximum sensitivity is caused by low packing and the increase of chemical adsorptions for $O_{2}$ gas.

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Structural properties of PZT multilayer thick films of improved densification (PZT 후막의 치밀성 향상에 따른 PZT 다층 후막의 구조적 특성)

  • Yun, Sang-Eun;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.1245-1246
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    • 2006
  • Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

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A Study on Powder Electroluminescencent Device using ZnS:Cu (ZnS:CU를 이용한 후막 전계 발광소자에 관한 연구)

  • 이종찬;박대희;박용규
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.121-124
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    • 1998
  • Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

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Electroluminescent Properties of ZnS:Gu with Mixed Ratio of Blue Dye (청색 염료 혼합비율에 따른 ZnS:Cu의 전계 발광 특성)

  • Lee, Jong-Chan;Kim, Tae-Hyung;Kim, Ki-Dae;Park, Das-Hee
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1733-1735
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    • 2000
  • 평판 디스플레이 소자인 후막 전계발광소자는 평판형 조명부터 LCD 백라이트에 응용되고 있다. 후막 전계발광소자에 사용되는 ZnS:Cu 형광체는 저주파수에서는 녹색 발광을 하며, 고주파수에서는 청색 발광을 가진다. 본 연구는 저주파수에서도 청색을 가지는 소자를 제작하기 위하여 형광체와 염료의 혼합 비율에 따른 발광특성을 조사하였다. 염료의 혼합 비율은 0$\sim$5 wt%로 하였다. 소자의 발광현상을 고찰하기 위하여 발광 스펙트럼과 휘도를 측정하였다.

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A Study on the Development of millimeter-wave Band Pass Filter Using the Photoimageable Thick Film Technology (후막 리소그라피 공정을 이용한 초고주파용 Band Pass Filter 개발에 관한 연구)

  • 김경철;이영신;박성대;박종철
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.11a
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    • pp.87-90
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    • 2002
  • For the broad band wireless communications system, the composition of the millimeter wave system is needed. In other to commercialize that system, satisfaction of high frequency characteristic and low cost process is required. In this study, BPF which is very sensitive to the characteristic of fine line designed and fabricated using photoimageable thick film technology.

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