• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.571-574
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• 2008

In this paper, we propose $256{\times}256$ pixel array fingerprint sensor with an advanced circuits for detecting. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. We minimizes an electrostatic discharge(ESD) influence by applying an effective isolation structure. The sensor circuit blocks were designed and simulated in standard CMOS $0.35{\mu}m$ process. Full custom layout is performed in the unit sensor pixel and auto placement and routing is performed in the full chip.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.3
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• pp.1-8
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• 1972

The characteristics of tunnel diode pair circuit biased within the negative resistance region has also the voltage-control type negative resistance region, and the voltage at the center point of negative resistance region is described as the square-wave relaxation oscillation. In this paper, the period T, positive duration T1, negative duration T2 of the pulse are obatined from the characteristic curve T, positive duration T1, negative duration T2 of the pulse are obtained from the characteristic curve and observed actually, considring the fact that the pulse width and the period of square-wave at the center point of the negative resistance region is able to be controlle dby the blas volgate. Mereover, the relationship between T, T1 or T2 and circuit parameters is searched for and the Circuit parameters that satisfy the conditions of T1-T2 being proportional to the variation of bias voltage with Teonstant are determined. Thereafter, the bias voltage and the signal voltage are inserted serially to the PWM circuit and the characteristics of that circuit is analyzed.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.9
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• pp.49-56
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• 1998

In this paper, a design of bias circuit in temperature independent voltage detect circuit is proposed. In order to realize this intention, we are used the differences in temperature coefficient of thermal voltage, resistor and transistor forward voltage(V$\sub$BE/) which is consisted in comparator. That is, It is realized by compensating the difference of temperature coefficient due to using components with each different temperature coefficient. As well, reference voltage of the circuit is accomplished by the difference of transistor forward voltage($\Delta$V$\sub$BE/) in comparator. In using reference voltage, resistor and V$\sub$BE/ Multiplier, we can design detect voltage of the circuit. In order to test operation of proposing circuit, we manufactured IC. Then, we measured operating characteristics and capability of the circuit by using HP4145B and temperature chamber. The result, we could obtain the good variation of temperature from -0.01 %/$^{\circ}C$ to -0.025 %/$^{\circ}C$.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.1
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• pp.69-74
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• 2021

This paper introduces a low-power voltage-controlled oscillator(VCO) with filters that consist of resistors and capacitors. The proposed VCO contains a 5-stage current mode buffer, and each buffer cell has a resistor-capacitor filter that connects input and output terminals. The filter adds a zero to the buffer cell. Because the zero moves the oscillation condition to high frequencies, the proposed VCO can generate a high frequency clock with low power consumption. The proposed circuit has been designed with 0.18 ㎛ CMOS process. The power consumption is 9.83 mW at 2.7 GHz. The proposed VCO shows 3.64 pJ/Hz in our simulation study, whereas the conventional circuit shows 4.79 pJ/Hz, indicating that our VCO achieves 24% reduction in power consumption.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.81-83
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• 2007

본 논문에서는 다양한 분야에서 응용될 수 있는 아날로그 신호를 디지털 신호로 변환하는 회로를 이용한 전자식 안정기를 구성하였다. 회로의 구성은 온도센서를 이용하여 안정기 ON/OFF 제어를 통한 냉음극 형광램프의 색을 제어하였고 온도센서뿐만 아니라 광센서, 가변저항, 음성센서 등 거의 모든 아날로그 신호의 센서를 사용 할 수 있도록 구성하였다.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.32-33
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• 2013

최근 많은 연구자들이 전력변환회로의 효율을 개선하기 위한 관심을 기울이고 있다. 플라이백 컨버터의 트랜스포머는 누설 인덕턴스에 저장된 에너지를 RCD 회로에서 소모한다. 이는 시스템 효율을 감소시키는 역할을 한다. 따라서 본 논문에서는 저항에 소모되는 에너지를 출력으로 회생시키는 기법에 대해서 제안한다. 제안된 회로의 성능은 모의 실험을 통해 검토한다.

• Journal of IKEEE
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• v.23 no.2
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• pp.370-374
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• 2019

It was found that temperature and humidity did not affect the leakage current since the leakage current was irregularly increased or decreased at a temperature of $22^{\circ}C$ to $32^{\circ}C$ and a humidity of 60.0% to 96.0%. The insulation resistance in the vicinity of $26^{\circ}C$ was $10.70M{\Omega}$ to $4,000.00M{\Omega}$ and was low from $9.10M{\Omega}$ to $1,000.00M{\Omega}$ before and after $26^{\circ}C$. As the humidity was increase in a range of 60%~96%, the insulation resistance was reduced from $4,000.00M{\Omega}$ to $4.80M{\Omega}$, which indicates that the temperature and humidity had an influence on the insulation resistance. The leakage current and the insulation resistance of the branch circuit to the cooking facilities were compliant with less than 1.00 mA and more than $0.20M{\Omega}$. Leakage current of 1.89 mA was non-compliant but the insulation resistance was compliant with the value of $65.00M{\Omega}$.

• Journal of IKEEE
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• v.16 no.3
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• pp.177-181
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• 2012

This paper introduces a thermal compensation circuit with improved compensation characteristic for amplifiers to provide stable output power regardless environmental temperature. The proposed thermal compensation circuit is composed of two branchline couplers having two diodes between them. And, the thermistor whose resistance varies significantly with temperature inversely and a operational amplifiers, so called as OP-amp, control the diodes in the compensations circuit to realize more effective thermal compendation characteristic compared with conventional circuit.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.37-43
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• 1996

The electrochemical impedance spectra of polyaniline film coated on tungsten electrodes by cyclic voltammetry have been measured in 0.1 M aqueous sulfuric acid solution. An electrochemical cell composed of large redox capacitance and low resistance of PANI-film in series was in agreement with the conductive behavior reported at these potentials. When the PANI was coated on bare tungsten, the electrolytic resistance was only observed. However, on the oxidized tungsten instead of bare tungsten, the resistance of tungsten oxide and the contact resistance between PANI and tungsten oxide were additionally observed. Equivalent electrical circuits have been deduced from the impedance data. It was therfore possible to obtain the parameters of the ionic mass transport within the film.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.7-11
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• 1976

A voltage-stable negative resistance circuit with operational amplifier is proposed, and circuit analysis is given all the input voltage range. The behavior of the v-i characteristics in the nogative resistance region is devided into two causes, and top points in the input v-i characteristics of the circuit is analyzed with them. Experimental results of the v-i characteristics of the proposed circuit has a good linearity in the negative region with negative resistance, -86$\Omega$~-833$\Omega$ for the input voltage, $\pm$ 1~$\pm$ 5 colts. The v-i characteristics of the circuit in all the input voltage range is discussed.