• Korean Journal of Materials Research
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• v.24 no.12
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• pp.689-693
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• 2014

Anti-reflection coating films have used to increase the transmittance of displays and enhance the efficiency of solar cells. Hydrophobic anti-reflection coating films were fabricated on a glass substrate by sol-gel method. To fabricate an anti-reflection film with a high transmittance, poly ethylene glycol (PEG) was added to tetraethyl orthosilicate (TEOS) solution. The content of PEG was changed from 1 to 4 wt% in order to control the morphology, thickness, and refractive index of the $SiO_2$ thin films. The reflectance and transmittance of both sides of the coated thin film fabricated with PEG 4 wt% solution were 0.3% and 99.4% at 500 nm wavelength. The refractive index and thickness of the thin film were n = 1.29 and d = 105 nm. Fluoro alkyl silane (FAS) was used for hydrophobic treatment on the surface of the anti-reflection thin film. The contact angle was increased from $13.2^{\circ}$ to $113.7^{\circ}$ after hydrophobic treatment.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.710-714
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• 2014

The effect of titanium dioxide ($TiO_2$) on the properties of color conversion glasses was examined for glasses based on $BaO-ZnO-B_2O_3-SiO_2$. One glass sample, containing 25 mol% of each component, was used as a reference; the other three glass samples contained 1, 3, and 5 mol% $TiO_2$, respectively. The four color conversion glass samples were prepared by sintering a mixture of glass frits and a $YAG:Ce^+$ phosphor. The characteristics of the color conversion glass samples, such as luminous efficacy, luminance, CIE (Commission International de I'Eclairage) chromaticity, CCT (Correlated Color Temperature), and CRI (Color Rendering Index) were analyzed according to the PL spectrum. The refractive index of the glass samples was found to increase with the titanium dioxide content. In conclusion, luminous efficacy of color conversion glasses increased as the content of $TiO_2$ was raised in the glass matrix.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.366-370
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• 2019

In this study, we have successfully fabricated a highly conductive transparent electrode using Ag nanowires, based on piezoelectric polyvinylidene difluoride (PVDF) film, that can be applied as transparent and flexible speakers. The structural morphology of the Ag nanowires was confirmed by a detailed scanning electron microscopy. Ultraviolet-visible spectroscopy demonstrated that the transparent electrode fabricated by the Ag nanowires exhibited a transmittance of above 70%. The transparent electrode also showed very low sheet resistance with high flexibility. We have further developed an anti-oxidation coating layer by using a tetraethyl orthosilicate-poly trimethyloxyphenylsilane (TEOS-PTMS) slurry technique. It was confirmed that the transmittance and sheet resistance of the antioxidant film depends critically on the humidity of the film surface. We believe such Ag nanowire electrodes are a very promising next-generation transparent electrode technology that can be used in future flexible and transparent devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.702-706
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• 2016

We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were $8{\times}10^8cm^{-2}$ and $7{\times}10^7cm^{-2}$, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.656-664
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• 2017

This paper presents the design and fabrication of a high power piezoelectric ultrasonic surgery unit for multi-purpose dental implantation. A conventional piezoelectric ultrasonic surgery units consists of a transducer and a tip. However, the drawback of this simple structure is that the output performance of the transducer considerably changes with the change of the tips. An ultrasonic surgery unit that has an additional booster between the transducer and the tip can solve this problem to some extent; for this, an optimal structural design for the transducer is required. We used the Bolted Langevin Transducer (BLT) as the basic transducer; it consists of piezoelectric ceramics and a metal body. It's structure was optimized using mathematical methods to determine the length and radius of the tail and head masses. Additionally, the booster was also subjected to the same methods. Using these mathematical methods, optimal results in terms of the resonance frequency (24.96 kHz), displacement ($14.27{\mu}m$), and pressure (2.8 MPa), could be obtained. The validity of this proposed surgery unit was confirmed experimentally, exhibiting a cutting force of around 7% higher than that of a conventional surgery unit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.525-530
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• 2011

We investigated the electrical properties the starting material and sintering condition on the laminated PTC thermistor for micro circuit protection. The influences of $BaTiO_3$ powder with the 0.3 and 0.45 ${\mu}m$ size and the electrical characteristics (Ba,Sr)$TiO_3$ sintered at 1350~1400$^{\circ}C$ for 2 h in a reducing atmosphere (1% $H_2/N_2$). The sintered (Ba,Sr)$TiO_3$ was increased pore and the grain size was decreased according to increasing Sr additions. In relative permittivity, the phase transition temperature of (Ba,Sr)$TiO_3$ was decreased for 2.5$^{\circ}C$ according to increasing 0.01 mole Sr additions, and the phase transition dose not appeared about 0.3 mole Sr addition. The (Ba,Sr)$TiO_3$ was show the low resistance from 0.01 mole to 0.05 mole by Sr addition, regardless of sintering temperature. The (Ba,Sr)$TiO_3$ was show $10^2$ jump order at 0.1 and 0.2 mole Sr addition, and PTCR of the sintered $(Ba_{0.7}Sr_{0.3})TiO_3$ does not appeared about 0.3 mole Sr addition, regardless of the sintering temperature and starting material size.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.22-28
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• 2016

In this study, we fabricated high quality color conversion component with green/red phosphor and low melting glass frit. The color conversion component was prepared by placing the green and red phosphor layer on slide glass via screen printing process. The properties of color conversion component could be controlled by changing coating sequence, layer thickness and heat treatment temperature. We discovered that optical properties of color conversion component were generally determined by the lowest layer. On the other hand, the heat treatment temperature also affected to correlated color temperature (CCT) and color rending index (CRI). The color conversion component with a green (lower) - red (upper) layer which was sintered at $550^{\circ}C$ showed the best optical properties: CCT, CRI and luminance efficacy were 3340 K, 78, and 56.5 lm/w, respectively.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.732-736
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• 2013

AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at $1120^{\circ}C$ with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of $E_2$ high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman $E_2$ high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of $NH_3$ is high.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.524-534
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• 2010

Glass was fabricated using refused coal ore obtained from the Dogye coal mine in Samcheok. We additionally used soda ash and calcium carbonate to make a glass with the chemical composition of soda-lime glass, and we also used white, brown, and green glass cullet to make various kinds of colored glass. Transparent glass was fabricated by melting batch materials including refused coal ore at $1550^{\circ}C$ for 1 hr in an electrical furnace. The light transmittance and color chromaticity were measured by a UV/VIS/NIR spectrometer. Transparent glass with a light transmittance of over 80% was fabricated using normal refused coal ore and white glass cullet. Various kinds of colored glass with a light transmittance of 30-80% were fabricated using refused coal ore and brown or green glass cullet. The light transmittance of the mixed color glass samples, fabricated using normal refused coal ore and brown glass cullet and green glass cullet, indicated 30-47%, a relatively low value, in the condition of a cullet ratio of 20-50%. The characteristics of the color chromaticity of the glass samples were indicated in a chromaticity diagram by x-coordinates, y-coordinates, Y (lightness). The values of x-coordinates and y-coordinates were moved with a regular directional property according to the kind and amount of glass cullet. Therefore, we concluded that refused coal ore can be used for raw materials of color glass products like art glass and glass tile.