Browse > Article
http://dx.doi.org/10.3740/MRSK.2013.23.12.732

Effect of V/III Ratio Variation on the Properties of AlN Epilayers in HVPE  

Son, Hoki (Korea Institute of Ceramic Engineering & Technology)
Lim, Tae-Young (Korea Institute of Ceramic Engineering & Technology)
Lee, Mijai (Korea Institute of Ceramic Engineering & Technology)
Kim, Jin-Ho (Korea Institute of Ceramic Engineering & Technology)
Kim, Younghee (Korea Institute of Ceramic Engineering & Technology)
Hwang, Jonghee (Korea Institute of Ceramic Engineering & Technology)
Oh, Hae-Kon (LumiGNtech Co.)
Choi, YoungJun (LumiGNtech Co.)
Lee, Hae-Yong (LumiGNtech Co.)
Kim, Hyung Sun (School of Materials Science and Engineering, Inha University)
Publication Information
Korean Journal of Materials Research / v.23, no.12, 2013 , pp. 732-736 More about this Journal
Abstract
AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at $1120^{\circ}C$ with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of $E_2$ high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman $E_2$ high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of $NH_3$ is high.
Keywords
V/III ratio; AlN; HVPE; template;
Citations & Related Records
연도 인용수 순위
  • Reference
1 M. Balaji, A. Claudel, V. Fellmann, I. Gelard, E. Blanquet, R. Boichot, A. Pierret B. Attal-Tretout, A. Crisci, S. Coindeau, H. Roussel, D. Pique, K. Baskar and M. Pons, J. Alloy. Comp., 526, 103 (2012).   DOI   ScienceOn
2 Yuta Takagi, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu, Phys. Status Solidi C, 9(3-4), 576 (2012).   DOI   ScienceOn
3 Toru Nagashima, Manabu Harada, Hiroyuki Yanagi, Hiroyuki Fukuyama, Yoshinao Kumagai, Akinori Koukitu and Kazuya Takada, J. Cryst. Growth, 305, 355 (2007).   DOI   ScienceOn
4 Yoshinao Kumagai, YuukiEnatsu, MasanariIshizuki, YukiKubota, JumpeiTaj ima, Toru Nagashima, HisashiMurakami, KazuyaTakada and AkinoriKoukitu, J. Cryst. Growth, 312, 2530 (2010).   DOI   ScienceOn
5 Yoshino Kumagai, Hiroshi Shikauchi, Jun Kikuchi, Takayoshi Yamane, Yoshihiro Kangawa and Akinori Koukitu, Proc. 21st century COE Joint Workshop on Bulk Nitrides IPAP Conf. Series 4 pp.9-13 (2003)
6 S. Corekc-i, M.K.Ozturk, M.Cakmak, S.Ozc-elik and E.Ozbay, Mater. Sci. Semicond. Process Volume 15, Issue 1, pp 32-36, February (2012).   DOI   ScienceOn
7 Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto, Narihito Okada, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tadashi Noro, Takashi Takagi and Akira Bandoh, Jpn. J. Appl. Phys., 45(11), 8639 (2006).   DOI
8 Yu-Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mutsuhiro Tanaka and Toshihiko Masa, Jpn. J. Appl. Phys., 44(17), L505 (2005).   DOI   ScienceOn
9 D. G. Zhao, J. J. Zhu, D. S. Jiang, Hui Yang, J. W. Liang, X. Y. Li and H. M. Gong, J. Cryst. Growth, 289, 72 (2006).   DOI   ScienceOn
10 J. Bai, T.Wang, P. J. Parbrook, K. B. Lee and A. G. Cullis, J. Cryst. Growth, 282, 290 (2005).   DOI   ScienceOn
11 D. G. Zhao, S. J. Xu, M. H. Xie and S. Y. Tong, Appl phys Lett., 83(4), 28 july (2003).
12 Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu, and Hideki Hirayama, Phys. Status Solidi C, 8(5), 1483 (2011).   DOI   ScienceOn
13 J. H. Yang, S. M. Kang, D. V. Dinh and D. H. Yoon, Thin Solid Films, 517, 5057 (2009).   DOI   ScienceOn
14 K. H. Chang, M. S. Kwon and S. I. Cho, J. Institute of Industrial Technology, 12, 123 (2004).