• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.35-38
• /
• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.14-17
• /
• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.5
• /
• pp.39-39
• /
• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.5
• /
• pp.29-38
• /
• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.370-371
• /
• 2006

본 연구에서는 PZT박막의 강 유전 캐패시터 제작을 위한 연구로, 4-inch크기의 $SiO_2$/Pt/Ti/Si가 증착된 웨이퍼를 습식 식각하여 $SiO_2$ 패턴(0.8um)을 형성하였고, PZT박막의 캐패시터 제작을 위해 패턴 웨이퍼에 $Pb_{1.1}$($Zr_{0.52}Ti_{0.48}$)$O_3$조성을 갖는 PZT를 증착하였다. $600^{\circ}C$에서 열처리 후 페로브스카이트 구조를 가지는 PZT 박막의 CMP(chemical mechanical polishing) 공정에 따른 전기적 특성을 연구하였다. 강유전체 소자 적용을 위한 CMP 공정으로 제조된 PZT 박막 캐패시터의 P-E특성, I-V특성, 피로특성 등의 전기적 특성을 측정하였다.

• Proceedings of the KSME Conference
• /
• 2003.04a
• /
• pp.1283-1288
• /
• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.1889-1892
• /
• 2003

The fabrication of micro-size patterning on alumina substrate is generated by laser direct writing, which has high precision and selectivity of various laser beam energies. The depth and width of patterns is affected by laser parameter such as laser power, scan rate. Through the chemical and mechanical polishing Pd seeds was effectively got rid of alumina substrate for selectivity electroless Ni plating. Thermal treatment is good method for changing electrical property of conductor line, because the treatment can control of the grain size.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1998.10a
• /
• pp.272-277
• /
• 1998

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer(work piece) and pad(tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Tribology and Lubricants
• /
• v.15 no.1
• /
• pp.90-97
• /
• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.9 s.240
• /
• pp.1276-1281
• /
• 2005

Compound semiconductors are the semiconductors composed of more than two chemical elements. Lithium Tantalate$K_I$ wafer is used for several optical devices, especially surface acoustic wave(SAW) device. Because of the lithography in SAW device process, $LiTaO_3$ polishing is needed. In this paper, the commercial slurries $(NALC02371^{TM},\; ILD1300^{TM},\;ceria slurry)$ used for chemical mechanical polishing(CMP) were tested, and the most suitable slurry was selected by measuring material removal rate and average centerline roughness$(R_a)$. From these result, it was proven that $ILD1300^{TM}$ was the most suitable slurry for $LiTaO_3$ wafer CMP due to the chemical reaction between solution in slurry and material.