• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.532-537
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• 1986

The kinetics of the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with $VO_2^+$ have been studied at $25^{\circ}C$ by spectrophotometric method. Stoichiometry of the oxidation of$ [Mo_2O_4(H_2O)_6]^{2+}$ is followed as $Mo_2^V + 2V^V {\rightleftharpoons} 2Mo^{VI} + 2V^{IV}$. Observed rate constants are dependent on $ [H^+]\;and\;[VO_2^+]$. Mechanism for the redox of $[Mo_2O_4(H_2O)_6]^{2+}\;and\;VO_2^+$ is proposed and discussed.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.555-560
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• 1990

High temperature superconducting films of $YBa_2Cu_3O_{7-x}$ were fabricated on the (100) single crystal faces of YSZ (yttria stabilized zirconia) and SrTi$O_3$ by aerosol spray using ultrasonic atomization. The superconducting phase was formed by a three-step process: (a) spraying of a stoichiometric solution of nitrates of yttrium, barium, and copper on heated substrates kept at 250$^{\circ}C$, (b) preheating of the sprayed films in air at 550$^{\circ}C$, and (e) sintering of the films in flowing oxygen at 950$^{\circ}C$, followed by furnace cooling. Resistances of the films were measured by the dc four-probe method and superconductivity was confirmed above the liquid nitrogen temperature.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.636-643
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• 2006

Supercritical water oxidation of DMMP using continuous flow reactor was studied at temperature ranging from 440 to $540^{\circ}C$ and a fixed pressure of 242 bar. The range of residence times in the reactor was from 10 to 26 s, and oxygen excess value varied from -40 to 200%. Destruction efficiencies (DE) of DMMP were greater than 99.7% at $540^{\circ}C$, and increased as the DMMP concentrations were increased. DE of DMMP were significantly affected by oxygen concentration under stoichiometric amount, but showed little difference over stoichiometric amount. On the basis of 30 data with conversions greater than 85%, kinetic correlations for the DE of DMMP were developed. The pre-exponential factor was $(1.10{\pm}0.76){\times}10^6$, and the activation energy was $90.66{\pm}3.87kJ/mol$, and the reaction orders for DMMP and oxygen were $1.02{\pm}0.03$, $0.32{\pm}0.03$, respectively. The model predictions agreed well with the experimental data.

• Journal of The Korean Association For Science Education
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• v.24 no.6
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• pp.1063-1069
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• 2004

This study investigated the effects of grouping method in solving chemistry problems using Think-Aloud Paired Problem Solving (TAPPS). Three classes (125 students) of a co-ed high school in Seoul were randomly assigned to the control, the homogeneous TAPPS, and the heterogeneous TAPPS groups. Prior to the instructions, a test of awareness of metacognition was administered. In the treatment groups, students were grouped into either homogeneous or heterogeneous group on the basis of their pre-achievement levels, and worked in pairs on chemistry problems about chemical equation and stoichiometry. Students' analytical skill, problem solving ability, and awareness of metacognition were examined after the instructions. One-way ANCOVA results indicated that the scores of the homogeneous TAPPS group in the analytical skill test were significantly higher than those of the heterogeneous TAPPS group. However, there were no significant differences among the three groups in the problem solving ability and the awareness of metacognition.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.130-134
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• 2005

To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solution of indium chloride, antimony chloride, citric acid, and potassium citrate according to our previous work on the electrodeposition of the stoichiometric InSb films. The electrical properties of nanowire arrays were measured by semiconductor parameter analyzer, and the microstructural analysis of the nanowires was conducted by employing XRD. Our experimental results indicate that the InSb nanowires have a highly preferred orientation of (220) direction and also exhibit electrical characteristics of n-type semiconductors which we, however, similar to semi-metals mainly due to their narrow band-gap and high electron mobility.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.135-138
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• 2005

We investigated the electrochemical formation of a stoichiometric III-V compound semiconductor of InSb from an aqueous citric solution. Under an? optimized electrochemical condition, not like other research results, the electrodeposited InSb are satisfied exactly with the stoichiometry. Furthermore it retains the inherent characteristics of III-V compound semiconductor, InSb without heat treatment. EPMA, XPS and XRD were employed for confirmation of its composition/stoichiometry, chemical state, and crystallographic orientation, respectively.

• Applied Chemistry for Engineering
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• v.34 no.3
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• pp.279-284
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• 2023

Isothermal titration calorimetry (ITC) is a useful technique to obtain thermodynamic binding properties such as enthalpy, Gibbs free energy, entropy, and stoichiometry of the chelation reaction. A single independent binding site model was used to evaluate the thermodynamic binding properties in BaCl₂ and ethylenediaminetetraacetic acid (EDTA) in Trince and HEPES buffers. ITC enables us to elucidate the binding mechanism and find an optimal chelation condition for BaCl₂ and EDTA in the pH range of 7~11. Chelation of BaCl₂ and EDTA is a spontaneous endothermic reaction. As pH increased, entropic contributions dominated. The optimal pH range is narrow around pH 9.0, where 1:1 binding between BaCl₂ and EDTA occurs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.387-387
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phaseepitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. Thesimulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in thelower range of 450~750 K than the experimental results. The difference in the growth temperature betweenthe simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited,presumably, due to the high activation energy of thin film growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.388-395
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phase epitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. The simulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$ and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in the lower range of 450~750 K than the experimental results. The difference in the growth temperature between the simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited, presumably, due to the high activation energy of thin film growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.110-110
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• 2009

Aerosol deposition method(ADM)는 상온에서 에어로졸화된 고상의 원료분말을 노즐을 통해 분사시켜 소결과정을 거치지 않고도 상온에서 고밀도 후막을 제조할 수 있는 공정으로서, 다양한 재료의 코팅이 가능하고, 코팅층의 조성 및 화학 양론비의 제어가 용이한 특징을 갖는다. 본 연구에서는 ADM을 이용하여 큰 유전상수, 압전계수, 초전계수, 탄성계수를 갖는 $BaTiO_3$ 분말을 원료로 하여 압전소자, 커패시터, 고전압용 유전체 등에 응용이 가능한 세라믹 층 형성에 관한 연구를 진행하였다. 또한 $BaTiO_3$ 같은 강유전체 세라믹을 이용하여 여러 가지 소자를 제조하는 경우 소자의 미세조직에 따라 물성이 영향을 받는 것으로 확인되어져 있다. 이에 본 연구에서는 세라믹 분말보다 상대적으로 탄성이 큰 polymer 분말을 첨가하여 후막 내부의 결정립의 크기가 20 nm 의 평균 결정립을 갖는 세라믹 후막에 비해 최대 10 배 정도까지 증가하는 것을 확인할 수 있었으며, 이에 따라 후막에서의 유전율 및 유전손실율의 전기적 특성 변화를 확인할 수 있었고, 이러한 물성변화에 대한 원인 고찰을 위하여 후막의 미세구조 및 화학조성 등에 대한 다양한 분석이 이루어 졌으며, 상온에서 성막되는 후막의 세라믹 층의 응용을 위한 최적의 공정조건을 제시하고자 한다.