• Journal of the Korean Society of Marine Environment & Safety
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• v.23 no.6
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• pp.661-668
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• 2017

The purpose of this study is to analyze the chemical reaction pathway for explosion accident of mixed cargo. The analysis used a structural scenario using event-tree analysis. Structural scenarios were constructed by estimating various chemical reaction paths in the content of the mixed cargo accident recorded in the written verdict. The analytical method was applied to three kinds of analysis: chemical analysis based on chemical theory, quantitative analysis using chemical reaction formula, and probabilistic analysis through questionnaire. As a result of analysis, the main pathway of the accident occurred in three ways: the path of explosion due to the reaction of concentrated sulfuric acid with water, the path of explosion due to the reaction of metal and mixed acid, and the path of explosion by synthesizing with special substances. This result is similar to the path recorded in the validation, and it leads to thar the proposed path analysis method is valid. The proposed method is expected to be applicable to chemical reaction path estimation of various chemical accidents.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.1085-1089
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• 1998

The well-established nitric acid-sulfuric acid mixed acid process for the nitration of aromatic compounds has serious problems due to the large amount of waste acids and severe reaction conditions. Nitration of toluene can be conducted using nitrogen dioxide and ozone instead of mixed acid. We found that conc. nitric acid increased the reactivity as catalyst and the amount of nitrogen dioxide controlled the extent of nitration. Dinitration proceeded to more than 92 mole % conversion within 2 hr at $0^{\circ}C$ with 6 eq. of nitrogen dioxide and 2 eq./hr of ozone flow. Toluene completed mononitration within 30 min using 3 eq. of nitrogen dioxide, 3 eq. of nitric acid, and 1.5 eq./hr of ozone flow. As a clean process of aromatic nitration, this method is expected to replace the present process which causes the environmental problems.

• Resources Recycling
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• v.17 no.5
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• pp.3-10
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• 2008

We researched recycle of mixed waste acids including HF, $CH_{3}COOH$, $HNO_3$ produced during semiconductor wafer process. At first, we recovered HF in form of $Na_{2}SiF_6$ by precipitation using $NaNO_3$ and $Na_{2}SiO_3$. Concentration of HF was made down from 110 g/L, initial concectration, to 0.5 g/L and Recovery rate of HF was 99.5%. After recovery of HF, concentration of $HNO_3$ and $CH_{3}COOH$ is 498 g/L, 265 g/L respectively. From that mixed acid, we recovered $CH_{3}COOH$ using 2 stages of fractional distillation. In first stage, $CH_{3}COOH$ was distilled for separation from $HNO_3$. And in second stage, we recoverd refined $CH_{3}COOH$ by using fractional distillation for removing a little amount of $HNO_3$ in $CH_{3}COOH$ vapor. The concentration of recovered $CH_{3}COOH$ in second stage is 20% and finally recovery rate of $CH_{3}COOH$ is about 87.5%.

• Resources Recycling
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• v.20 no.1
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• pp.61-68
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• 2011

Impurity removal from metallurgical grade silicon by acid washing at $50^{\circ}C$ was investigated by employing sulfuric, nitric acid and the mixture of hydrochloric and hydrofluoric acid. Acid washing treatment had no effect on the removal of boron and the concentration of this clement after treatment was rather increased. In our experimental range, the removal percentage of phosphorus was 60%. In the acid washing with sulfuric and nitric acid, the removal percentage of major impurities was below 50%, which indicates that refining effect was not great with these acids. Acid washing with the mixture of hydrochloric and hydrofluoric acid led to removal percentage of higher than 90%. Data on the purity of silicon after acid washing at various conditions are reported.

• Resources Recycling
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• v.18 no.4
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• pp.62-69
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• 2009

We researched separation of mixed waste acids with HF, $CH_3COOH$, $HNO_3$ that were produced during a semiconductor wafer process to recycle these acids. At first, we manufactured the fluoride compound in form of $Na_2SiF_6$ by precipitating HF using $NaNO_3$ and Si powder. The concentration of HF was reduced from the initial concentration of 127 g/L to 0.5 g/L with an HF recovery ratio of 99.5%. After the manufacture of $Na_2SiF_6$, the concentration of $HNO_3$ and $CH_3COOH$ demonstrated 502 g/L and 117 g/L respectively. Following these findings we added NaOH in this $CH_3COOH/HNO_3$ mixed acid in order to obtain pH=4. Next we separated the $CH_3COOH$ and recoverd it through the use of vaccum evaporation at -440 mmHg, $95^{\circ}C$. The concentration of the recovered $CH_3COOH$ was approximately 15% and the recovery ratio of $CH_3COOH$ was over 85%. We precipitated the $NaNO_3$ by cooling the concentrated solution to $20^{\circ}C$ with a $HNO_3$ recovery ratio of over 93%. We confirmed that only $Na_2SiF_6$ and $NaNO_3$ were manufactured by XRD analysis after drying these precipitants at $90^{\circ}C$. The precipitants demonstrated a purity of approximately 97% and 98% respectively. Therefore, the purity of the precipitants proved to be similar to that of commercial products.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.1092-1095
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• 1999

The well-known mixed-acid process for the aromatic nitration requires subsequent separation of spent acid, mainly dilute sulfuric acid. A novel nitration process using $HNO_3-NO_2-O_3$ was tested in a small pilot scale with 3 mol of p-nitrotoluene. Nitrogen dioxide(14.3 mol) was added three times in parts into the solution of p-nitrotoluene and $HNO_3$(6 mol) in dichloroethane. The nitration proceeded to more than 97% conversion within 5.5 h using 0.871 mol/h of ozone. As a clean process of aromatic nitration, this method is expected to replace the present process which causes the environmental problems.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.127-127
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• 2016

일반적인 알루미늄 표면처리 방식중 De Smut 는 질산 50~60% 용액에 상온에서 수초에서 수분 침적으로 Smut가 거의 제거가 되므로 도금공정에서 문제가 되지않았다. 단지 NOx 의 발생으로 작업공간 에서의 환경이 열악해 질 수 있다는 것이 문제 였다, 그러나 환경문제에 있어서 정부의 질소 규제 가 시작 되면서 알루미늄을 재료로 표면처리 하는 업체 에서는 질산 사용이 곤란해 해졌다. 그러나 질산이 금속과 의 친화력은 스테인레스, 알루미늄, 등 많은 금속에서 소지금속의 용해를 방지 하면서 산화스케일( De Smut)을 제거하는 데 유용한 산이어서 아직도 이용되고 있는 실정이다. 본 연구에서 는 우선 스테인레스 강의 산세시 불산과 질산의 혼산을 사용 하는 것을 불산, 불화암모늄, 황산, 과산화 수소 혹은 불산, 염산, 과산화 수소 등으로 전환 사용 하는 것 에 착안 하여 황산, 과산화수소 시스템에서 혹은 불산, 황산, 과산화 수소, 등으로 Smut 제거가 가능 한지 알아보고 그 효과를 살펴보았다.

• Korean Journal of Hazardous Materials
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• v.6 no.2
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• pp.47-54
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• 2018

Mixed acid is very reactive and highly corrosive. it has been causing many accidents in a electronic industry, a steel industry, and a chemical industry. Therefore, it is required that the high safety level for the acid storage facilities. In this study, we investigated the accident causes for resent leak accidents with Root Cause Analysis (RCA). The root causes analysed by RCA were categorized as nine divisions by the their characteristics. Furthermore, each nine divisions causes was applied to the PDCA model which are using at OHSAS 18001. It is suggested that the nine division with the root causes can be the essential items for the development of the safety management manual. It is helpful to the safety improvement of the acid storage facility.

• Clean Technology
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• v.2 no.1
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• pp.96-108
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• 1996

$NO_x$ is mainly emitted from mixed acid pickling process in the stainless industry and its impact to the environment has been worried over. This study which may be considered as one of the development of clean technologies, differing from the traditional end pipe technology is about how to reduce $NO_x$ emission through the modification of corresponding process. This study consists of two parts. First, the influence of various reaction parameters in a acid pickling process on $NO_x$ emission was investigated. Second, the influence of hydrogen peroxide on $NO_x$ formation, which is known as inhibitor of $NO_x$ emission, was investigated. Major findings in this study are as follows. The important reaction parameters which have a great influence on $NO_x$ emission are the reaction temperature and the concentration of fluoric acid. The concentration of nitric acid, some of which results in $NO_x$ compound is not as important as the concentration of fluoric acid. Synthetic mixed acid of nitric acid and fluoric acid itself in absent of pickling plate contributed the $NO_x$ emission, however, its impact was negligible in terms of quantity. The addition of hydrogen peroxide to the acid pickling process significantly contributed to the reduction of $NO_x$ emission and successfully achieved 80% reduction of $NO_x$ emission at the condition of $9.51{\times}10^{-2}mole\;hydrogen\;peroxide/m^2$ pickling area. This result was compared to literature value from Avesta steel process, indicating a sixth of hydrogen peroxide addition of Avesta's in achieving a same amount of $NO_x$ reduction. The region of the economic hydrogen peroxide addition per unit area of plate to be pickled from the result of this study was established.

• Resources Recycling
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• v.15 no.5 s.73
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• pp.26-32
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• 2006

The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to remove impurities less than 1 ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, a mixed system of solvent extraction, diffusion dialysis and ion-exchange was developed to commercialize in an efficient system fur recovering the high-purity phosphoric acid. By vacuum evaporation, almost 99% of nitric and acetic acid was removed. And by solvent extraction method with tri-octyl phosphate (TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio A/O=1/3 with 4th stage of extraction stage. About 97.5% of Al and 36.7% of Mo were removed by diffusion dialysis. Essentially almost complete removal of metal ions and purification of high-purity phosphoric acid could be obtained by using ion exchange.