• Title/Summary/Keyword: 호명

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A Study on The Comparison of The Program Efficiency in The Conventional CHE Injection Method and a novel Hot Electron Injection Method Using A Substrate forward Bias (CHE 주입방법과 기판 순바이어스를 이용한 새로운 고온 전자 주입방법의 프로그램 효율성 비교에 관한 연구)

  • Zhang, Yong-Jie;An, Ho-Myoung;Kim, Hee-Dong;Kim, T.G.
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.1-5
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    • 2010
  • In this paper, we directly compare the program efficiency of conventional channel hot electron (CHE) injection methods and a novel hot electron injection methods using substrate forward biases in our silicon-oxide-nitride-oxide-silicon (SONOS) cell. Compared with conventional CHE injection methods, the proposed injection method showed improved program efficiency including faster program operation at lower bias voltages as well as localized trapping features for multi-bit operation with a threshold voltage difference of 1 V at between the forward and reverse read. This program method is expected to be useful and widely applied for future nano-scale multi-bit SONOS memories.

Study of charge trap flash memory device having Er2O3/SiO2 tunnel barrier (Er2O3/SiO2 터널베리어를 갖는 전하트랩 플래시 메모리 소자에 관한 연구)

  • An, Ho-Myung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.789-790
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    • 2013
  • $Er_2O_3/SiO_2$ double-layer gate dielectric shows low gate leakage current and high capacitance. In this paper, we apply $Er_2O_3/SiO_2$ double-layer gate dielectric as a charge trap layer for the first time. $Er_2O_3/SiO_2$ double-layer thickness is optimized by EDISON Nanophysics simulation tools. Using the simulation results, we fabricated Schottky-barrier silicide source/drain transistor, which has10 um/10um gate length and width, respectively. The nonvolatile device demonstrated very promising characterstics with P/E voltage of 11 V/-11 V, P/E speed of 50 ms/500 ms, data retention of ten years, and endurance of $10^4$ P/E cycles.

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High-Performance Hardware Architecture for Stereo Matching (스테레오 정합을 위한 고성능 하드웨어 구조)

  • Seo, Young-Ho;Kim, Woo-Youl;Lee, Yoon-Hyuk;Koo, Ja-Myung;Kim, Bo-Ra;Kim, Yoon-Ju;An, Ho-Myung;Choi, Hyun-Jun;Kim, Dong-Wook
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.635-637
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    • 2013
  • This paper proposed a new hardware architecture for stereo matching in real time. We minimized the amount of calculation and the number of memory accesses through analyzing calculation of stereo matching. From this, we proposed a new stereo matching calculating cell and a new hardware architecture by expanding it in parallel, which concurrently calculates cost function for all pixels in a search range. After expanding it, we proposed a new hardware architecture to calculate cost function for 2-dimensional region. The implemented hardware can be operated with minimum 250Mhz clock frequence in FPGA environment, and has the performance of 813fps in case of the search range of 64 pixels and the image size of $640{\times}480$.

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A Study on the Memory Trap Analysis and Programming Characteristics of Reoxidized Nitrided Oxide (재산화 질화산화막의 기억트랩 분석과 프로그래밍 특성)

  • Nam, Dong-Woo;An, Ho-Myung;Han, Tae-Hyun;Seo, Kwang-Yell;Lee, Sang-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.17-20
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    • 2001
  • Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

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An Implementation of Auto Attendance Management System based on App using NFC Technique (NFC 기술을 활용한 앱(App)기반 자동 출결 관리 시스템 구현)

  • Kim, Bong-Gi
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.2
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    • pp.719-723
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    • 2016
  • Owing to the recent increased interest in wireless communication technology and rapid technology development, a range of applied technologies utilizing them are being released. In addition, at school, by adopting an attendance management system using wireless communication technology, attempts to solve problems caused by attendance books are being made. Representative attendance management systems include those using RFID, Bluetooth and clicker. Although these systems have solved the problem of wasting paper and time due to calling and writing attendance, they have other problems of generating additional expenses of purchasing or renting more equipment. To solve all of these problems, this paper suggests prototype system that can manage attendance by using NFC (Near Field Communication), which most smartphones provide. The attendance management system using NFC consists of two applications; one for professors and the other for students. The system solves problems, such as proxy attendance, loss of lesson time and additional cost by automatically managing attendance information using NFC and TCP/IP technologies.

RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the fabrication of SiGe HBT (SiGe HBT 제작을 위한 실리콘 게르마늄 단결정 박막의 RBS 분석)

  • 한태현;안호명;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.916-923
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    • 2004
  • In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

Discourse Analysis of the 1970s Myungrang Manwha (1970년대 한국 명랑만화의 담론분석)

  • Kim, Dae-Keun
    • Cartoon and Animation Studies
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    • s.43
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    • pp.255-284
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    • 2016
  • This article aims at a discourse analysis on the selected 1970s Myungrang Manwhas, in the cases of Ggubungi, Doggaebi Gamtu, Yochul Balmyungwang. For the analysis, the history, pre-censorship, and distribution structure of Myungrang Manwha are referenced, as well as the considerable changes and developments on the definition of 'myungrang' since the 1920s. In employing Foucauldian discourse analysis to the texts, the selected Myungrang Manwhas are analyzed as discursive formation, which emerged within the social relations of the era; the characters' dialogues are analyzed as statement. The analysis examines the discourses that the texts disseminated, and the social context of the utterance. It is demonstrated that the Myungrang Manwhas are forms of representation, which implies 'the contested acquisition on capital and power', 'the emphasis on nationalist aspects', and 'the interpellation and discipline of subject active' of the time. Moreover, it is revealed that the forms of control, such as pre-censorship, were the articulation of the will to power, which drove the discoursive formation to function as an apparatus that meticulously constituted the ruling ideology. In conclusion, the Myungrang Manwhas are rather texts that encompasses political and social context of the era than a mere comic relief.

Study on the cycloidal pendulumn as a method to test the isochronism of a pendulumn (진자의 등시성 확인 실험을 위한 사이클로이드 진자의 활용 방안 연구)

  • Kim, Ji-Yeon;Choi, Ho-Meoyng
    • Journal of Science Education
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    • v.32 no.1
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    • pp.1-18
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    • 2008
  • We investigated 8th grade science textbooks and their instructor's manuals treating the ideal condition for isochronism of a simple pendulum. The isochronism, i.e. the period is independent of amplitude, is satisfied only if the amplitude is very small. This is so called "ideal condition" for isochronism of a simple pendulum. Most textbooks and instructor's manuals are found not to state this ideal condition properly, which often leads to the deviation between experimental data and theoretical calculation. This difference between theoretical and experimental results makes students to create a sense of alienation from the real world and eventually keeps them away from physics. We thus study the cycloidal pendulum as an alternative method to test the isochronism regardless of amplitude and discuss the practical utility of it in class.

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Application of the TaqMan® real-time PCR assay for the detection of chicken (Gallus gallus) meat in pork products (돼지고기 제품 내 닭고기 검출을 위한 TaqMan® real-time PCR의 적용)

  • Koh, Ba-Ra-Da;Kim, Ji-Yeon;Na, Ho-Myung;Park, Seong-Do;Kim, Yong-Hwan
    • Korean Journal of Veterinary Service
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    • v.36 no.3
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    • pp.193-201
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    • 2013
  • Many consumers are increasingly concerned about the meat they eat, and accurate labelling is important due to public health, economic and legal concerns. Meat species adulteration is a common problem in the retail markets. In this study, a TaqMan$^{(R)}$ quantitative real-time polymerase chain reaction (PCR) assay was applied for its ability to quantify chicken meat, which was not indicated on the label, in 79 commercial pork products (ham, sausages, bacon and ground meat) producted by 10 different manufacturers. The amplification efficiency was 82.05% and the square regression coefficient ($R^2$) was 0.995. PCR results showed that 38.6% of ham samples, 50.0% of sausages samples, and 50.0% of ground meat samples were contaminated with chicken residuals, while the bacon samples were not contaminated with chicken residuals. Only twelve pork products of one of the manufacturers were in accordance with indicated in their labels. The PCR assay reported in this work could be particularly useful in inspection programs to verify the food labelling of commercial processed meats and to gain consumers' trust.

Survey on the Incidence of Dwarf Disease (Mycoplasma-like organism) of Mulberry. (뽕나무오갈병(위축병) 발생실태조사)

  • Kim, Yeong-Taek;Baek, Jun-Hwan;Lee, Jae-Chang
    • Journal of Sericultural and Entomological Science
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    • v.29 no.1
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    • pp.39-47
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    • 1987
  • The incidence of mulberry dwarf disease was surveyed on seventy two cocoon producing areas throughout the country from 1983 to 1984. There was a low tendency of incidence in Gyeonggi, Gangwon and Chungbuk, the northern parts of 37 degrees north latitude. However, in Chungnam and Gyeongnam, was a relatively high incidence observed. The most severe incidence areas of mulberry dwarf disease were found in Jeonnam, Jeonbuk and Gyeongbuk.

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