• Proceedings of the Computational Structural Engineering Institute Conference
• /
• 2010.04a
• /
• pp.558-561
• /
• 2010

본 연구에서는 나노복합재의 탄소성 거동과 항복응력을 예측하기 위해 분자동역학 전산모사를 수행하였다. 나일론 기지와 실리카 나노입자가 포함된 단위 셀 구조로부터 나노입자의 체적분율 변화에 따른 응력-변형률 선도를 등변형률을 적용한 등온등압 앙상블 전산모사로부터 도출하였다. 4%의 변형률 범위에서 나노복합재의 탄성계수를 도출하였고, 이를 이용하여 2% 오프셋 방법으로 항복응력을 예측하였다. 나노입자의 유무에 따른 항복평면의 변화와 고분자 재료에서 나타나는 정수압 효과가 항복평면에 미치는 영향을 확인하기 위해 일축 인장/압축 그리고 이축 인장/압축을 수행하였고, 각각의 경우에 나타나는 나노복합재 내부의 자유체적 변화에 대한 분석을 통해 나노입자의 강화효과를 고찰하였다. 또한 고분자 기지로 인해 발생하는 정수압 효과를 반영한 von-Miss 항복평면을 도출하고, 입자의 체적분율 변화에 따른 항복응력의 예측이 가능하도록 정수압효과에 대한 파라메터를 체적분율의 함수로 근사하였다.

• Journal of the Korea Concrete Institute
• /
• v.24 no.6
• /
• pp.685-693
• /
• 2012

The yield strength of shear reinforcement is restricted in the present design codes. In this study, the possibility of the yield strength increase in shear reinforcement is evaluated according to ACI318-08, EC2-02 and CSA-04 by comparing the experimental and calculated results. Three cases were used to analyze the shear strength of the beam. One had no limitation in the yield strength of shear reinforcement, another had restriction on the yield strength of shear reinforcement, and the other had a restriction on the yield strength of shear reinforcement and the shear reinforcement ratio. The study results showed that the case with unlimited shear reinforcement yield strength predicted the test result better than other two cases. Even though the rebar yield strength higher than the strength required in present code was applied to existing shear design equation, the result was reasonable. Therefore, the design equation seemed to be appropriate even if the high-strength shear reinforcement is used in practice based on the existing shear design method.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.4
• /
• pp.917-921
• /
• 2013

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.05a
• /
• pp.693-695
• /
• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.2
• /
• pp.372-377
• /
• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1227_1228
• /
• 2009

본 논문에서는 순방향 특성의 열화 없이 항복전압 향상을 위해 플로팅게이트와 필드플레이트를 적용한 AlGaN/GaN HEMTs를 제작하였다. AlGaN/GaN HEMTs에서의 항복전압은 게이트의 하단의 전계분포와 관련이 있다. 제안된 AlGaN/GaN HEMTs의 경우 GaN 층의 공핍영역을 효과적으로 확장시킴으로써 게이트와 드레인 사이의 영역에서의 전계집중을 성공적으로 완화시켰다. 필드플레이트와 플로팅게이트가 모두 적용된 소자의 항복전압이 1106 V인 반면, 필드플레이트만 적용한 소자의 항복전압은 688 V, 플로팅게이트만 적용한 소자의 항복전압은 828 V로 측정되었다.

• Proceedings of the KIEE Conference
• /
• 2008.10a
• /
• pp.127-128
• /
• 2008

Baliga는 구형 PN 접합에 대한 해석적인 항복전압을 유도하였으며, 이 식은 ${\gamma}(r_j/W_{pp})$ 값이 1보다 큰 구간에서 구형 접합의 항복전압이 원통형 및 평면형 항복진압 보다 큰 값을 가지게 된다. 기본적으로 구형 접합의 한복전압이 원통형과 평면형 접합의 항복전압보다 클 수 없기 때문에 이는 명백한 오류이다. 이 오류는 식을 구하는 과정에서 소수점 두 자리를 무시하고 계산을 하였기 때문임을 밝혀냈으며, 또한 이러한 작은 실수가 구형 접합의 항복전압에 미치는 영향이 지대할 수 있다는 결과를 보고하고자 한다.

• Journal of Korea Game Society
• /
• v.14 no.6
• /
• pp.49-58
• /
• 2014

In particle-based fluid simulation, the yield stress is required for the deformation of the viscoelastic material like gel. von Mises's yield condition has been proposed to implement deformation of viscoelastic objects, but did not express the explosion. Furthermore, von Mises's yield condition is hard to approximate. We propose an ideal yield condition for viscoelastic object that reference from Tresca's yield condition. Unlike conventional particle-based simulation approximate the external power by the deformed length of the object, this paper is approximate the external power by area of the object. We check up that explosion was realistic when a viscoelastic object is compressed under the ideal yield condition.

• Composites Research
• /
• v.36 no.5
• /
• pp.369-376
• /
• 2023

This study focuses on investigating the influence of epoxy polymer crosslinking density, a crucial aspect in composite material matrices, on the yield surface using molecular dynamics simulations. Our approach involved generating epoxy models with diverse crosslinking densities and subjecting them to both uniaxial and multiaxial deformation simulations, accounting for the elasto-plastic deformation behaviors. Through this, we obtained key mechanical parameters including elastic modulus, yield point, and strain hardening coefficient, all correlated with crosslinking conversion ratios. A particularly noteworthy finding is the rapid expansion of the yield surface in the biaxial compression region with increasing crosslinking ratios, compared to the uniaxial tensile region. This unique behavior led to observable yield surface variations, indicating a significant pressure-dependent relationship of the yield surface considering plastic strain and crosslinking conversion ratio. These results contribute to a deeper understanding of the complex interplay between crosslinking density and plastic mechanical response, especially in the aspect of multiaxial deformation behaviors.

• Journal of Korean Society of Coastal and Ocean Engineers
• /
• v.27 no.4
• /
• pp.197-201
• /
• 2015

Experimental and numerical analysis has been carried out in this paper to understand correlation between volume and yield of cellular bulkhead. It was firstly confirmed from these results that the conditions and parameters considered in the finite element analysis were reasonable and realistic due to the fact that the yield loads determined by the two different methods were equivalent in actual. Based on this results, a series of intensive numerical analysis has been further performed and revealed that the yield load varied in direct proportion to the change in the volume of the cellular bulkhead.