• Membrane Journal
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• v.27 no.2
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• pp.147-153
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• 2017

In this study, we investigated permeation properties of single gas ($N_2$, $O_2$, $CO_2$) through membranes composed of poly(ethylene oxide) (PEO) and poly(ethylene-co-vinyl acetate) (EVA) blend. The prepared membranes showed no new absorbance peaks, which indicate the physical blending of PEO and EVA by FT-IR analysis. SEM observation showed that the crystalline phase of PEO decreased with increasing EVA content in the PEO/EVA mixed matrix. DSC analysis showed that the crystallinity of the PEO/EVA blend membrane decreased with increasing EVA content. Gas permeation experiment was performed with various feed pressure (4~8 bar). The permeability increased in the following order: $N_2$ < $O_2$ < $CO_2$. The permeability of $CO_2$ in PEO/EVA blend membranes were increased with increasing feed pressure, However, the permeability of $N_2$ and $O_2$ were independent of feed pressure. On the other hand, the permeability of all the gases in PEO/EVA blend membranes increased with increasing amorphous EVA content in semi-crystalline PEO. In particular, the blend membrane with 40 wt% EVA showed $CO_2$ permeability of 64 Barrer and $CO_2/N_2$ ideal selectivity of 61.5. The high $CO_2$ permeability and $CO_2/N_2$ ideal selectivity are attributed to strong affinity between the polar ether groups of PEO or the polar ester groups of EVA and polar $CO_2$.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.985-989
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• 1999

Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.

• Journal of Radiation Protection and Research
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• v.26 no.1
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• pp.7-12
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• 2001

Sintered LiF:Mg,Cu,Na,Si thermoluminescence (TL) pellets were developed for application in radiation dosimetry. In the present study, the TL dosimetric properties of LiF:Mg,Cu,Na,Si TL pellets have been investigated for emission spectrum, dose response, energy response, and fading characteristics. LiF:Mg,Cu,Na,Si TL pellets were made by using a sintering process, that is, pressing and heat treatment from TL powders. Photon irradiations for the experiments were carried out using X-ray beams and a $^{137}Cs$ gamma source at the Korea Atomic Energy Research Institute (KAERI). The average energies and the dose were in the range of 20-662 keV and $10^{-6}-10^{-2}\;Gy$, respectively. The glow curves were measured with a manual type TLD reader(System 310, Teledyne) at a constant nitrogen flux and a linear heating rate. For a constant heating rate of $5^{\circ}C\;s^{-1}$, the main dosimetric peak of glow curve appeared at $234^{\circ}C$, the activation energy was 2.34 eV and frequency factor was $1.00{\times}10^{23}$. TL emission spectrum is appeared at the blue region centered at 410 nm. A linearity of photon dose response was maintained up to 100 Gy. The photon energy responses relative to $^{137}Cs$ response were within ${\pm}20%$ at overall photon energy region. The fading of TL sensitivity of the pellets stored at the room temperature was not found for one year.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.84-90
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• 2005

The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.12
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• pp.2251-2257
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• 2006

We fabricated ZnO thin film successfully by using RF magnetron sputtering and investigated its potential for being utilized as the key material of piezoelectric device with the characterization of ZnO thin film such as such as crystallinity, surface morphology, c-axis orientation, film density. In thin study, $Ar/O_2$ gas ratio is fixed 70/30, RF power 125W, working pressure 8mTorr, distance between substrate and target 70mm, but the substrate temperature is varied from room temperature to $400^{\circ}C$. The relative intensity ($I_{(002)}/I_{(100)}$) or (002) peak in ZnO thin film deposited at $300^{\circ}$ was exhibited as 94%, then its FWHM was $0.571^{\circ}C$. Also, from the surface morphology evaluated by SEM and AFM, the film deposited at $300^{\circ}C$ showed uniform particle shape and excellent surface roughness of 4.08 m. The tendency of ZnO thin film density was exhibited to be denser with increasing substrate temperature but slightly decreased at near $400^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.145-151
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• 2005

Color enhancement of African rubies with dark red was carried out by the heat treatment and the hydrothermal treatment method respectively. The heat treatment method brought about an adverse effect causing the color to be deteriorated. However, the hydrothermal treatment method enhanced its color and clarity. The hydrothermal treatment conditions for color enhancement of them were as follows: solvent: 0.9M $Na_2CO_3-1M\;K_2CO_3$, temperature: $450^{\circ}C$, duration: 48 hrs, filling: $30\%$, pressure: 375 atm. As the results of characteristics for African rubies obtained under these conditions, it was known that the amount of $Cr^{3+},\;Fe^{3+},\;Ti^{4+}$ was reduced after the hydrothermal treatment from the ICP/MS and XRF analyses. Also, it was found that the red color from the colorimeter analyses was getting lighter. These results were consistent with the PL analysis showing that the intensity of the luminescence peak generated by the electron transition of $Cr^{3+}$ ion became lower after the hydrothermal treatment compared with the non-treated rubies.

• Journal of Biomedical Engineering Research
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• v.23 no.6
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• pp.485-489
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• 2002

In this study. respiratory efforts were monitored by the change of pulse transit time (PTT) which is related with the arterial pressure PTT is the time interval between the peak of R wave in ECG and the maximal slope point of photoplethysmogram(PPG). Biosignals, ECG and finger photoplethysmogram(PPG), were converted to digital data, and PTT was evaluated in personal computer with every heart beat. Results were presented as a graph using spline interpolation. The software was implemented in C$\^$++/ as a window-based application program. PTT was periodically changed according to airflow in resting respiration. In the resting respiration, PTT was changed according to the respiratory cycle. The amplitude of PTT fluctuation was increased by deep respiration, and increased by partial airway obstruction. These results suggest that PTT is responsible to respiratory effort which could be evaluated by the pattern of PTT change. And it is expected that PTT could be applied in the monitoring of respiratory effort by noninvasive methods, and is very useful method for the evaluation of respiratory distress.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.220-220
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• 2010

펄스 직류 $BCl_3$ 플라즈마를 이용하여 GaAs와 AlGaAs의 건식식각을 연구하였다. 공정의 주요 변수는 펄스 직류 전압(350~550V), 펄스 직류 시간($0.4{\sim}1.2{\mu}sec$.), 펄스 직류 주파수(100~250kHz)이었다. 식각 실험 후 샘플의 식각률, 식각 선택도, 표면 형상을 비교, 분석하였다. 또한, 광학 발광 분석기(Optical Emission Spectroscopy)를 이용하여 식각하는 동안 플라즈마 방전 특성을 분석하였다. 표면 단차 측정기(Alpha-step IQ, Tencor)로 식각 깊이를 측정해 식각률을 계산하였다. 표면 거칠기 또한 단차 측정기의 표면 거칠기 프로그램을 이용하여 분석하였다. 식각 벽면과 표면 상태는 주사전자현미경(Field-emission scanning electron microscopy)을 이용하여 관찰하였다. 분석 결과는 1) 펄스 직류의 전압이 증가하면 전극에 걸리는 파워가 올라가고 GaAs와 AlGaAs의 식각률도 증가하였다. 2) 76 mTorr 공정 압력, $0.7{\mu}sec$. 펄스 직류 시간과 200 kHz 주파수 일 때 10 sccm $BCl_3$ 펄스 직류 플라즈마에서 GaAs와 AlGaAs 둘 다 약 $0.4{\mu}m/min$ 이상의 식각 속도를 보여주었다. 3) 식각 선택도는 펄스 직류의 전압이 높아지면 증가하였고, 펄스 직류 주파수의 증가도 공정 파워와 GaAs와 AlGaAs의 식각률을 증가시켰다. 4) 그러나 펄스 직류 주파수가 150kHz 이하일 때에는 GaAs와 AlGaAs가 거의 식각되지 않았다. 5) 표면 거칠기는 펄스 직류 주파수가 증가하면 미세하게 좋아졌고 플라즈마는 펄스 직류 주파수가 100~250kHz 일 때 생성되었다. 6) 펄스 직류 시간의 증가는 공정 파워, 식각률, 식각 선택도 모두의 증가를 가져왔다. 7) 광학발광분석기(OES) 데이타는 $BCl_3$ 플라즈마에서 넓은 범위(450~700nm)에서의 염소(Cl) 분자 피크를 나타내었다. 8) 전자 현미경 사진은 펄스 직류 전압이 400 V보다 550 V 일 때보다 더 이방성(Anisotropic)측면과 부드러운 표면을 나타냈지만, 조금의 홈(Trench)이 발견되었다. 결론적으로 펄스 직류 $BCl_3$ 플라즈마는 GaAs와 AlGaAs의 건식식각에서 우수한 결과를 나타냈었다.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.51-61
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• 1999

$SrBi_2Ta_2O_9$ thin films were prepared on $Pt/SiO_2$/Si p-tyPp (100) substrate by r.f. magnetron sputtering method. The films were annealed at $800^{\circ}C$ and characterized in terms of micro-structures and electrical properties depending on film deposition conditions. XRD patterns of SBT films annealed at $800^{\circ}C$ indicated the typical SBT phase of (006), (111), and (200) with BiPt additional peaks. SEM images show that crystal gram become to grow with increasing the substrate temperature and decreasing the gas pressure. The remanant polarization(2Pr) and the coercive field(Ec) of 200nm thickness SBT film which was deposited at 10$0^{\circ}C$ under 50mtorr gas pressure and annealed at $800^{\circ}C$ were 20.07$\mu$C/$\textrm {cm}^2$ and 79kV/cm, respectively.

• The Journal of the Petrological Society of Korea
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• v.5 no.2
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• pp.129-134
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• 1996

Possibile phase transitions of graphite have been examined experimentally using piston cylinder and DAC with synchrotron radiation. The graphite-forming processes in high pressure and low temperature conditions and the phase change under super high pressure were studied in the conditions of 0.7 Gpa and 270-$360^{\circ}C$ in piston cylinder and under 39.6 Gpa in DAC. In the piston cylinder experiment using LiCO3as a catalyzer, we could synthesize disordered graphites whose TGD values change progressively form 9 to 53. It was known that the temperature of graphitization in 0.7 Gpa is between 270-$300^{\circ}C$. Numerous unknown XRD peaks were observed in the super high-pressure experiment. However, it is difficult to pick up a new peak of a hexagonal diamond phase. Application of the different high pressure apparatus as well as a peculiar X-ray source and various graphite specimen would be useful for super high-pressure experiment, and more detailed works are needed to characterize the unknown phase(s) observed in this study.