• The Journal of Engineering Geology
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• v.31 no.3
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• pp.433-445
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• 2021

Plasma blasting by high voltage arc discharge were performed in laboratory-scale soil samples to investigate the fluid penetration efficiency. A plasma blasting device with a large-capacity capacitor and columnar soil samples with a diameter of 80 cm and a height of 60 cm were prepared. Columnar soil samples consist of seven A-samples mixed with sand and silt by ratio of 7:3 and three B-samples by ratio of 9:1. When fluid was injected into A-sample by pressure without plasma blasting, fluid penetrated into soil only near around the borehole, and penetration area ratio was less than 5%. Fluid was injected by plasma blasting with three different discharge energies of 1 kJ, 4 kJ and 9 kJ. When plasma blasting was performed once in the A-samples, penetration area ratios of the fluid were 16-25%. Penetration area ratios were 30-48% when blastings were executed five times consecutively. The largest penetration area by plasma blasting was 9.6 times larger than that by fluid injection by pressure. This indicates that the higher discharge energy of plasma blasting and the more numbers of blasting are, the larger are fluid penetration areas. When five consecutive plasma blasting were carried out in B-sample, fluid penetration area ratios were 33-59%. Penetration areas into B-samples were 1.1-1.4 times larger than those in A-samples when test conditions were the same, indicating that the higher permeability of soil is, the larger is fluid penetration area. The fluid penetration radius was calculated to figure out fluid penetration volume. When the fluid was injected by pressure, the penetration radius was 9 cm. Whereas, the penetration radius was 27-30 cm when blasting were performed 5 times with energy of 9 kJ. The radius increased up to 333% by plasma blasting. All these results indicate that cleaning agent penetrates further and remediation efficiency of contaminated soil will be improved if plasma blasting technology is applied to in situ cleaning of contaminated soil with low permeability.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.27-32
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• 2005

We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide ($SCCO_2$) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, $200^{\circ}C$) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure $SCCO_2$, but swollen. The $SCCO_2$ system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the $SCCO_2$ system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at $97^{\circ}C$ and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using $SCCO_2$ system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.34-34
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• 1999

토카막(Tokamak)에서는 플라즈마(plasma)로 불순불(impurity)의 유입을 방지하기 위해 고진공을 유지해야 하며 이를 위해 가열탈리(backing), 방전세정(discharge codanning) 등 wall conditioning이 기본적으로 요구된다. KT-1 토카막은 실험실 이전에 따른 해체로 인해 진공용기(vacuum vessel) 가 대기압 하에 수개월 동안 노출되어 있었기 때문에 재조립 후 가열 탈 리가 필수적이나 진공용기의 외부에 saddle loop coil을 비롯해 Rogowski, diamagnetic coil, poloidal field coil 등 많은 magnetic pick up coil 들이 설치되어 있어 열선 등 일반적인 방법으로 가열 탈 리가 어려운 상황이다. 따라서 KT-1 토카막에서는 전자석 코일에 상전원을 부가하였을 때 진공용기에 발생하는 유도가열 (inductive heatin)을 이용해 가열 탈리를 시도하였다. 유도 가열 탈리(inductive backing)는 토로이달 자장 코일(toroidal field coil)과 가열 저장 모일(ohmic heating coil)을 각각 이용하여 코일의 온도가 6$0^{\circ}C$ 이하가 유지되는 코일 전류 범위내에서 수행하였으며 먼저 이 둥 경우에 있어서 진공용기의 온도분포를 비교하엿다. 그리고 가열 탈리 기간 및 그 전, 후의 진공압력과 잔류기체 분압을 측정, 분석하였다. 유도가열에 의한 방법으로 KT-1 토카막에서 얻은 탈리온도는 12$0^{\circ}C$정도로 비교적 낮았으나 탈리 시간을 연장하여 탈리효과를 어느 정도 보상할 수 있으며 일반적인 가열 탈리가 여려운 경우 유도 가열 탈 리가 채택될 수 있는 또 하나의 방법이라 볼 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.75-75
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• 2010

배변 후 toilet flushing 시 다량의 세균을 포함한 물방울들이 화장실 곳곳으로 퍼지는 현상이 있다. 이러한 현상을 방지하기 위해 변기 뚜껑에 자기 세정 효과를 갖는 초발수 표면을 위해 플라즈마를 이용한 표면 처리가 시도되고 있으며, 이 연구의 일환으로 flushing시의 변기내의 유동 분석을 초고속 카메라를 이용하여 수행하였다. Toilet flushing 시 물 튀김 현상은 육안으로는 잘 관찰하기 어렵지만 최고 1000 frame/sec의 속도를 갖는 CCD camera를 이용하여 정량적으로 물 튀김에 의한 오염 가능성을 촬영 분석하였다, 두 번째로 소변 시의 변기 표면에서의 튀김현상을 분석하기 위하여 소변의 발사각도 및 속도를 가장 실제와 유사한 조건으로 설정하고 이를 상용 전산 유체 역학 소프트웨어인 CFD- ACE+의 자유 표면 계산 기능과 두 가지 유체(액체 및 기체)의 혼합 계산 모델을 사용한 계산 결과와 비교 하였다. 그 결과 변기 표면의 표면장력을 아주 작게 설정한 경우(작은 접촉각, 친수성)에는 중력의 영향을 고려하였음에도 불구하고 소변이 변기에 충돌 후 상부로 상당부분 튀어 올라가는 결과를 얻었다. 여러 가지 각도와 발사 속도, 실제의 인체와 유사한 발사 부위의 형상 변화로 인한 유체 표면의 난류 발생과 이에 따른 변기 표면 충돌 현상 변화 등을 수치적으로 고찰하였다. 한 예로 5.6 mm 직경의 노즐에서 소변이 나오는 경우를 발사 속도 3 m/s, 각도 $10^{\circ}$로 주고 중력을 고려하여 10초 동안을 계산하면, 방뇨 시 toilet bowl 내부에서의 물의 유동과 toilet 표면을 맞고 튀기는 현상을 그림 1과 같이 볼 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.19-26
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• 2007

This study was focused on the feasibility of ultrasonic bonding of Au flip chip bumps for a practical complementary metal oxide semiconductor (CMOS) image sensor with electroplated Au substrate. The ultrasonic bonding was carried out with different bonding pressures and times after the atmospheric pressure plasma cleaning, and then the die shear test was performed to optimize the ultrasonic bonding parameters. The bonding pressure and time strongly affected the bonding strength of the bumps. The Au flip chip bumps were successfully bonded with the electroplated Au substrate at room temperature, and the bonding strength reached approximate 73 MPa under the optimum conditions.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.1-214.1
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• 2013

Tetra-ethoxysilane (TEOS)은 일반적으로 저온 게이트 산화막의 원료 널리 이용되고 있으나 as-deposited 상태에서는 필수적으로 생성된 높은 계면밀도와 고정전하를 제거하기 위하여 수소계면처리, forming gas annealing 등 후처리 공정을 필수적으로 거처야만 한다. 즉 후처리 공정 없이도 일정수준의 계면밀도와 고정전하를 갖을 수 있는 출발물질이 제안되면 산업적 의미를 갖을 것이다. 본 연구에서는 TEOS를 대체할 수 있는 후보재료로써 Tetra-iso-propoxysilane (T-iso-POS)을 제안하였다. T-iso-POS는 iso 구조의 3차원적 특수 구조를 가지므로 더 쉽게 분해 될 수 있어 탄소의 결합을 억제 할 수 있다고 사료된다. 용량 결합형 PECVD (13.56 MHz) 장비를 이용하여 RCA 세정을 실시 한 p-Si (100) 기판위에 TEOS 혹은 T-iso-POS (2 sccm)와 O2를 도입(50 sccm), 플라즈마 전원(20~100 W), 압력(0.1~0.5 torr), 온도 ($170{\sim}400^{\circ}C$), 전극 간 거리 (1~4.5cm)의 조건 하에서 증착하였다. 얻어진 각각의 SiO2 막에 대해, 성장 속도, 2% BHF 용액보다 에칭 속도, IV 특성과 C-V 특성, FT-IR에 의해 화학구조 평가를 실시했다. T-iso-POS원료로 사용하여 TEOS보다 낮은 약 $200^{\circ}C$에서 증착 된 산화막에서 후 처리 없이도 10 MV/cm 이상의 절연 파괴 특성을 나타내는 우수한 게이트 절연막 제작에 성공했다. 그 성장 속도도 약 20 nm/min로 높았다.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.5
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.

• The Korean Journal of Applied Statistics
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• v.27 no.4
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• pp.543-552
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• 2014

High bandwidth RF such as Bluetooth, GPRS, EDGE, 3GSM, HSDPA is papular in the mobile phone market. A non-conducting metal coating process requires an e-beam deposition of metal, two steps of UV hard coating primer and top coating; however, it is inefficient. We navigate to the electron beam irradiation conditions(resin surface treatment conditions) in the PC/ABS resin injection process. By analyzing the experimental results, we find the optimum development conditions for the electro deposition pre-treatment process and mass production lines using the plasma generated electron beam source.