• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.5
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• pp.505-512
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• 2012

In this study, an inspection system based on an optical scanning mechanism is developed for the inspection of silicon wafers in solar cells. In particular, a structured hybrid illumination system that can satisfy the illumination requirement for the detection of various defects is designed. In the hybrid illumination system, the optimum illumination conditions are selected by considering the design of experiment in master glass and silicon wafer. The illumination conditions available are B-high, BG-high, BR-high, and BGR-high for master glass and R-middle-B-medium for silicon wafers. By using the illumination conditions for silicon wafers, numerous surface defects like pinhole, scratch, and chipping, can be accurately detected. The hybrid illumination system is expected to be widely used for the inspection of silicon wafers in solar cells.

• Journal of the Korean Society for Nondestructive Testing
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• v.17 no.3
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• pp.162-173
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• 1997

Automatic on-line surface inspection systems have been applied for monitoring a quality of steel strip surfaces. One of the important issues in this application is the performance of on-line defect classifiers. Rule-based classification table methods which are conventionally used for this purpose have been suffered from their low performances. In this work, probabilistic neural networks and the enhanced classification tables which are newly proposed here are applied as alternative on-line classifiers to identify types of surface defects on cold rolled strips. Probabilistic neural networks have shown very excellent performance for classification of surface defects.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.1
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• pp.53-58
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• 2002

New nondestructive inspection (NDI) technique to detect the defect in metal was developed in which an electromagnetic field is induced in a metal by AC current flowing in the magnetic coil and the leak magnetic-flux disturbed by defects is measured using a tape-recorder head with air gap. This technique can be applied in evaluating the location and sizing of surface defects in components of the ferromagnetic body by means of the non-contacting measurement. In this paper, we have applied this technique to the evaluation of two-dimensional surface cracks in ferromagnetic metal, and also investigated the influence of the various frequencies and lift-off. Defects were detected with maximum values in the distribution of voltage and it was found that the maximum values tend to increase with the defect depth. Although the maximum values for defects are affected by the frequency and lift-off, the depth of small defects can be estimated from the linear relationship between the depth and voltage rate$(V_0/V_{ave})$.

• Journal of Korea Foundry Society
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• v.9 no.6
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• pp.446-453
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• 1989

무철심 유도로를 이용한 주철 및 주강의 용해보온에 요구되는 야금학적인 조건에 관하여 광범한 연구 조사가 있었다. 가장 중요한 법칙을 요약 설명하고자 한다. 이들 법칙은 주물공장에서 활용할 수 있으며 주물의 모서리 근처, 가혹한 조건하에서 발생 할 수 있는 여러 가지 결함을 방지하는데 도움이 될 것이다. 이러한 점에서 작업공정 절차를 관찰하는 것이 중요하며 현장에서 사용하도록 판정도표를 작성하였다.

• Journal of the Korean Society for Nondestructive Testing
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• v.19 no.3
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• pp.173-179
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• 1999

The defects on the metal surface. such as the ended circular pressed hole. the penetrated circular drilled hole, and the linear hollow lanes have been investigated by means of the microwave. In this experiment, frequency was set at 9.2GHz with 3kHz modulation, and the methods of reflection, transmission, fixed carrier frequency, and mod-demodulated technique have been used for investigating defects. The magnitudes of the microwave signals have been changed at the ended circular pressed hole and the penetrated circular drilled hole. The defect sizes that were estimated from the reflected microwave signals had the dimensions enlarged by twice the original size of the penetrated circular drilled hole and 2.5 times the original size of the ended circular pressed hole. The magnitudes of the reflected microwave signals from the linear hollow lane have increased with expansion of the width of the notch. In the linear hollow lane with the depth of 2.4mm, the reflected microwave signals versus the defect widths had a maximum value at the defect width of 50mm, and in the linear hollow lanes with the depths of 1.2mm and 0.45mm, the reflected microwave signals versus the defects widths had the maximum values each at the defect depths of 55mm.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.109-117
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• 1995

고에너지 이온주입시 격자결함의 생성 및 열처리 거동이 double crystal X-ray와 단면 TEM을 사용하여 연구되었다. 3MeV P+ 이온주입한 실리콘의 DCXRD 분석 결과조사량 증가에 따라 모재 내의 변형량은 증가하였다. HRTEM 분석 결과 고에너지 이온주입시 결함은 표면 부근에 희박하고 Rp 부근에 집중되어 있었다. 또한 이온주입 상태의 결함층은 dark band의 형태로 존재하였으며 열처리시 이차결함은 이곳으로부터 생성됨이 관찰되었다. 3MeV P+,$1X1015extrm{cm}^2$의 조건으로 이온주입된 실리콘 시편의 열처리에 따른 X-ray rocking curve 분석을 통하여 열처리 온도가 $550^{\circ}C$에서 $700^{\circ}C$로 증가함에 따라 모재 내부의 최대 변형량이 7X10-4에서 2.9X10-4으로 감소함이 관찰되었다. 특히 $550^{\circ}C$ 열처리한 시편의 경우 표면으로부터$-1.5mu$m 영역에 작은 변형층이 넓게 잔존하였으며 열처리온도를 $700^{\circ}C$로 증가한 경우 제거되었다. 이온주입시 생성된 일차결함들은 $700^{\circ}C$ 열처리시 $60^{\circ}$ 전위와 <112> 막대 모양 결함, $1000^{\circ}C$ 열처리시 <110>방향의 전위루프로 열처리 조건에 따라 여러 가지 모양의 이차결함으로 변화하였다. 고에너지 이온주입에 의해 발생한 이차결함은 고온에서도 안정하여 고온 열처리에 의한 제거가 용이하지 않았다.

• Journal of the Korean Society for Railway
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• v.11 no.3
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• pp.272-279
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• 2008

The importance of maintenance of rail surface defects is increasing more according to the KTX operation. That is because during high speed operation of rolling stock, rail surface defects may cause shortened fatigue life of rail, acceleration of track degradation and reduced ride comfort. The paper was intended to study the establishment of rail grinding criteria of high-speed railway lines considering the KTX operation circumstances. For this, the specimens of UIC 60 rail on Kyeong-Bu high-speed operation lines were collected and they were tested for metallographic structure and measured for the hardness. As the factors affecting RCF causing the defects of rail surface, passing tonnage, running speed and track condition are considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.127.1-127.1
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• 2016

Si은 값싸고 넓은 시설기반을 갖추고 있어, 발전산업에서 태양광소자의 주원료로 널리 사용된다. 하지만 Si은 간접 띠틈을 Si의 특성을 개선하기 위해 최근 Si에 특정한 결함을 넣어 직접 띠틈으로 바꿔 광효율을 높이려는 시도가 있다. 2015년 초 Si단결정[111]으로 Seiwatz-chain 형태의 결함이 있다면 결함이 있는 Si(111)에 직접 띠틈이 생길 것 이라고 이론적으로 예상했다. 이러한 구조의 제작방법으로 Ca/Si(111)과 Si(111)을 접합 후 가열하여 Ca을 빼내는 방법을 제시했다[1]. 본 연구에서는 이 제작방법 외에 Ca/Si(111)-$2{\times}1$ 표면에서[2] 에피성장으로 결함이 유지된 Si단결정 형성가능성을 제일원리 계산을 통해 연구했다. 제일원리 계산방법으로는 VASP(Vienna Ab-initio Simulation Package)를 이용하였다. Si원자 한개, 두 개, 세 개가 흡착될 경우 원자당 흡착에너지는 각각 3.73 eV, 3.73 eV, 3.91 eV 였다. 따라서 Si원자는 무리형태로 흡착될 것으로 예상되어 결함을 유지하며 단결정으로 성장하기는 어려울 것으로 보인다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.44-45
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• 2001

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.