• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.45 no.5
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• pp.95-102
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• 2008

This paper presents an appropriate approach for modeling noise in Computed Radiography(CR) images of high strength materials. The approach is specifically designed for types of noise with the statistical and nonlinear properties. CR images Ere degraded even before they are encoded by computer process. Various types of noise often contribute to contaminate radiography image, although they are detected on digitalization. Quantum noise, which is Poisson distributed, is a shot noise, but the photon distribution on Image Plate(IP) of CR system is not always Poisson process. The statistical properties are relative and case-dependant due to its material characteristics. The usual assumption of a distribution of Poisson, binomial and Gaussian statistics are considered. Nonlinear effect is also represented in the process of statistical noise model. It leads to estimate the noise variance in regions from high to low intensity, specifying analytical model. The analysis approach is tested on a database of steel tube step-wedge CR images. The results are available for the comparative parameter studies which measure noise coherence, distribution, signal/noise ratios(SNR) and nonlinear interpolation.

• Proceedings of the Korea Water Resources Association Conference
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• 2003.05b
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• pp.699-702
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• 2003

• The Journal of Engineering Geology
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• v.6 no.2
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• pp.103-110
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• 1996

This study shows the variation of poisson's ratio according to stress for the Cretaceous sandstones and shale in the Euiseoung Subbasin. To make a mechanical experiment, samples prepared with 3.0 cm in diameter and 6.2 cm in length were used in testing stress and strain. Generally poisson's ratio has been considered as one of properties, but contrary to steel, the test result makes sure that poisson's ratio has functional relation to stress. I had used four methods to calculate poisson's ratio, Poisson's ratio shows considerable different results according to the calculating, method but it has similar tendency in an elastic limit. Poisson' s ratio increases rapidly and is distinguished clearly in internal fracture region according to the calculating method. Poisson's ratio of sandstone and shale is different from one another in low and high stress regimes,but it is linearly proportional to the stress in an elastic regimes, that is, ${\nu}_t={\;}{\nu}_0+P_{\sigma}({\nu}_0$:first stage Poisson's ratio, ${\nu}_t$:poisson's ratio, P: poisson's coefficient, $\sigma$:stress). Poisson's ratios of two kinds of rock samples show continuous variation from 0.1 to 0.21 in an elastic regime. The variation of poisson's ratio is much wider in an internal fracture regine. It varies from 0.22 to 0.45 in sandstone, which is out of elastic regime.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.747-752
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• 2009

Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of the Korean Data and Information Science Society
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• v.14 no.2
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• pp.177-186
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• 2003

The Zero-Inflated Poisson regression is a model for count data with exess zeros. When the correlated response variables are intrested, we have to extend the univariate zero-inflated regression model to multivariate model. In this paper, we study and simulate the multivariate zero-inflated regression model. A real example was applied to this model. Regression parameters are estimated by using MLE's. We also compare the fitness of multivariate zero-inflated Poisson regression model with the decision tree model.

• Proceedings of the KAIS Fall Conference
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• 2011.05a
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• pp.176-178
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• 2011

본 연구에서는 소프트웨어 제품을 개발하여 테스팅을 거친 후 사용자에게 인도하는 시기를 결정하는 방출문제에 대하여 연구되었다. 인도시기에 관한 모형은 무한 고장수에 의존하는 비동질적인 포아송 과정을 적용하였다. 이러한 포아송 과정은 소프트웨어의 결함을 제거하거나 수정 작업 중에도 새로운 결함이 발생될 가능성을 반영하는 모형이다. 강도함수는 로그-로지스틱 패턴을 이용하였다. 따라서 소프트웨어 요구 신뢰도를 만족시키고 소프트웨어 개발 및 유지 총비용을 최소화 시키는 방출시간이 최적 소프트웨어 방출 정책이 된다.

• Proceedings of the KAIS Fall Conference
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• 2011.05a
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• pp.179-181
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• 2011

본 연구에서는 소프트웨어 제품을 개발하여 테스팅을 거친 후 사용자에게 인도하는 시기를 결정하는 방출문제에 대하여 연구되었다. 인도시기에 관한 모형은 무한 고장수에 의존하는 비동질적인 포아송 과정을 적용하였다. 이러한 포아송 과정은 소프트웨어의 결함을 제거하거나 수정 작업 중에도 새로운 결함이 발생될 가능성을 반영하는 모형이다. 강도함수는 중첩 패턴을 이용하였다. 따라서 소프트웨어 요구 신뢰도를 만족시키고 소프트웨어 개발 및 유지 총비용을 최소화 시키는 방출시간이 최적 소프트웨어 방출 정책이 된다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.6
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• pp.1409-1413
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• The Korean Journal of Applied Statistics
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• v.23 no.5
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• pp.835-844
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• 2010

Tools for statistical analysis of extreme values include the classical annual maximum method, the modern threshold method and variants improving the second one. While the annual maximum method is to t th generalized extreme value distribution to the annual maxima of a time series, the threshold method is to the generalized Pareto distribution to the excesses over a high threshold from the series. In this paper we deal with the Poisson-GPD method, a variant of the threshold method with a further assumption that the total number of exceedances follows the Poisson distribution, and apply it to the daily percentage increases and decreases computed from the spot prices of West Texas Intermediate, which were collected from January 4th, 1988 until December 31st, 2009. According to this analysis, the distribution of daily percentage increases as well as decreases turns out to have a heavy tail, unlike the normal distribution, which coincides well with the general phenomenon appearing in the analysis of lots of nowaday nancial data.