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http://dx.doi.org/10.6109/jkiice.2013.17.6.1409

Analysis of Subthreshold Current Deviation for Channel Doping of Double Gate MOSFET  

Jung, Hakkee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.17, no.6, 2013 , pp. 1409-1413 More about this Journal
Abstract
This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.
Keywords
DGMOSFET; subthreshold current; Gaussian function; channel doping concentration; Poisson equation;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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