• Title/Summary/Keyword: 펄스 레이저 증착법

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Properties of Indium Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition (펄스레이저증착법으로 증착한 Indium Zinc Oxide 박막의 물성)

  • Choi, Hak-Soon;Jeong, Il-Kyo;Shin, Mun-Soo;Kim, Heon-Oh;Kim, Yong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.537-542
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    • 2011
  • Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

Fabrication and Characterization of Bi2O3-MgO-ZnO-Nb2O5 Thin Films by Pulsed Laser Deposition (펄스 레이저 증착법으로 제작된 Bi2O3-MgO-ZnO-Nb2O5 박막의 제작 및 특성 분석)

  • Bae, Ki-Ryeol;Lee, Dong-Wook;Elanchezhiyan, J.;Lee, Won-Jae;Bae, Yun-Mi;Shin, Byoung-Chul;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.211-215
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    • 2010
  • Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

Fabrication of High Tunable BST Thin Film Capacitors using Pulsed Laser Deposition (펄스 레이저 증착법에 의한 BST 박막 가변 Capacitors 제작)

  • Kim, Sung-Su;Song, Sang-Woo;Roh, Ji-Hyoung;Kim, Ji-Hong;Koh, Jung-Hyuk;Moon, Byung-Moo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.79-79
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    • 2008
  • We report the growth of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin films and their substrate-dependent electrical characteristics. BST thin films were deposited on alumina(non-single crystal), $Al_2O_3$(100) substrates by Nd:YAG Pulsed Laser Deposition(PLD) with a 355nm wavelength at substrate temperature of $700^{\circ}C$ and post-deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1hours. BST materials had been chosen due to high dielectric permittivity and tunability for high frequency applications, To analyze the oxygen partial pressure effects, deposited films at 1, 10, 50, 100, 150, 200, 300 mTorr. The effects of oxygen pressure on structural properties of the deposited films have been investigated by X-ray diffraction(XRD) and atomic force microscope(AFM), respectively. Then we manufactured a inter-digital capacitor(IDC) patterns twenty fingers and $10{\mu}m$ gap, $700{\mu}m$ length and electrical properties were characterized. The results provide a basis for understanding the growth mechanisms and basic structural and electrical properties of BST thin films as required for tunable microwave devices applications such as varactors and tunable filters.

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Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate (사파이어 기판에 펄스 레이저 증착법으로 성장된 AlN 박막의 특성)

  • Jeong, Eun-Hee;Chung, Jun-Ki;Jung, Rae-Young;Kim, Sung-Jin;Park, Sang-Yeup
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.551-556
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    • 2013
  • AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

Hydrogen Post-annealing Effect of (Pb0.72,La0.28)Ti0.93O3 Films Fabricated by Pulsed Laser Deposition (펄스레이저 증착법으로 제작된(Pb0.72,La0.28)Ti0.93O3박막의 수소후열처리에 관한 전기적 특성 연구)

  • 한경보;전창훈;전희석;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.3
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    • pp.190-194
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    • 2003
  • Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

Effects of Substrate Temperature on Figure of Merit of Transparent Conducting GZO Thin Films (기판온도가 GZO 투명전도막의 재료평가지수에 미치는 영향 )

  • Hyun-Ho Shin;Yang-Hee Joung;Seong-Jun Kang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.5
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    • pp.797-802
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    • 2023
  • We prepared GZO (Ga2O3 : 5 wt %, ZnO : 95 wt %) thin film on glass substrate according to the substrate temperature using the pulsed laser deposition method and investigated electrical and optical properties of the thin film. Through the XRD measurements, their were confirmed that all GZO thin films grew preferentially in c-axis and the GZO thin film deposited at 300℃ showed the best crystallinity with a FWHM of 0.38°. As the substrate temperature increased from 150 to 300℃, the resistivity of GZO thin film tend to decrease, while the average transmittance in the visible light region was not significantly affected. The figure of merit of the GZO thin film deposited at 300℃ was 2.05×104-1·cm-1, which was the best value, the resistivity and the average transmittance in the visible light region were 3.72 × 10-4 Ω·cm and 87.71 %, respectively. In this study, it was found that GZO thin film is very promising material for transparent conducting thin film.

Optical Properties of ZnO Thin Films deposited by Pulsed Laser Deposition (PLD 법을 이용해 제작한 ZnO 박막의 광학적 특성)

  • Kang, Seong-Jun;Joung, Yang-Hee;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.5
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    • pp.15-20
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    • 2007
  • We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

Effect of $CeO_2$ buffer layer thickness on superconducting properties of $YBa_2Cu_3O_{7-{\delta}}$ films grown on $Al_2O_3$ substrates ($CeO_2$ 완충층의 두께가 $Al_2O_3$ 기판 위에 성장된 $YBa_2Cu_3O_{7-{\delta}}$ 박막의 초전도 특성에 미치는 영향)

  • Lim, Hae-Ryong;Kim, In-Seon;Kim, Dong-Ho;Park, Yong-Ki;Park, Jong-Chul
    • Journal of Sensor Science and Technology
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    • v.8 no.2
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    • pp.195-201
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    • 1999
  • C-axis oriented $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown on $Al_2O_3$ (alumina and R-plane sapphire) substrates by a pulsed laser deposition method. The crystallinity of the $CeO_2$ buffer layer on sapphire substrate exhibit a strong dependence on the deposition temperature, resulting in the growth of a-axis orientation at $800^{\circ}C$. The superconducting properties of YBCO thin films on $Al_2O_3$ substrates showed strong dependence on both thickness and crystallinity of the $CeO_2$ buffer layer. Critical temperature of YBCO film on alumina substrate was ${\sim}83\;K$. In the case of R-plane sapphire substrate,

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Deposition of YBCO/BaZrO$_3$ films on MgO single crystal substrates by pulsed laser deposition (펄스레이저법으로 MgO 단결정 기판위에 YBCO/BaZrO$_3$ 박막의 증착)

  • Chung Jun-Ki;Ko Rock-Kil;Kim Hosup;Ha Hong-Soo;Song Kyu-Jeong;Moon Seung-Hyun;Yoo Sang-Im;Kim Cheol-Jin;Park Chan
    • Progress in Superconductivity and Cryogenics
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    • v.6 no.3
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    • pp.12-15
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    • 2004
  • There are two major approaches to obtain texture template for HTS coated conductor (CC) ---IBAD and RABiTS. CC's with IBAD template showed both longer and higher Ic results so far. IBAD for CC began with YSZ, the processing of which is very slow compared to other processings needed for the fabrication of CC. Because of this very slow processing speed, IBAD with other materials such as Gd$_2$Zr$_2$O$_{7}$(GZO) and MgO have been developed. The processings of IBAD-GZO and IBAD-MgO are known to be up to 3times and 100 times. respectively, as fast as the processing of IBAD-YSZ. IBAD-MgO is very attractive in that the processing is very fast. IBAD-MgO also needs additional buffer layer(s). Many materials are being investigated to be used as a buffer layer on top of the MgO. BaZrO$_3$ (BZO) is a good candidate as the buffer layer on top of the IBAD-MgO because it is chemically stable and does not react with YBCO at high temperatures. It also has good lattice match with MgO. The BZO film has been deposited on single crystal MgO, and YBCO film was deposited on BZO/MgO to investigate the possibility of using BZO as both the buffer and capping layer of the CC.C.

Growth and Optical Properties for ZnO Thin Film by Pulesd Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 광학적 특성)

  • 홍광준;김재열
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.10a
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    • pp.233-244
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    • 2004
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

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