• Proceedings of the Korea Water Resources Association Conference
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• 2009.05a
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• pp.1812-1816
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• 2009

이미지 해석에 의한 유속장 측정방법은 유체역학분야에서 지난 30 여년 동안 많이 활용되어온 속도측정 기법으로 오늘날에는 이를 수공학 분야에서 이를 유량측정 등 수리현상 해석에 활용하려는 시도가 다각적으로 이루어지고 있다. 이에 본 연구에서는 이미지 해석에 의한 유속장 측정방법을 용담댐 시험유역에 적용하여 그의 자연하천에서의 적용성을 검토하고자 한다. 이미지 해석에 의한 유속장 측정방법은 PIV(Particle Image Velocimetry)로 통칭되고 있으며, PIV는 seeding, illumination, recording, 및 image processing의 네 가지 요소로 구성된다. seeding을 위해서 유체를 따라 흐를수 있는 작은 입자를 유체에 첨가한다. 유체를 따라 흐르는 입자들의 선명한 이미지를 얻기 위해서illumination이 필요하다. PIV를 이용하여 흐름을 해석하기 위한 illumination은 일반적으로 이중펄스 레이저가 이용된다. 이렇게 유속장 해석을 하려는 유체에 대하여 seeding 및 illumination이 준비되면 단일노출- 다중 프레임법, 혹은 다중노출-단일 프레임법으로 흐름을 recording을 한다. image processing은 이미지를 다운로드하고, 디지타이징 및 화질향상을 하는 전처리(pre-processing), 상관계수의 산정에 의한 유속 벡터의 결정 및 에러 벡터를 제거하고 유속장을 그래프화하는 후처리(post-processing) 과정으로 구성된다. LSPIV(Large Scale PIV)는 PIV의 기본원리를 근거로 하여 기존의 PIV에 비하여 실험실 내에서의 수리모형실험이나 일반 하천에서의 유속측정과 같은 큰 규모$(4m^2\sim45,000m^2$)의 흐름해석을 할 수 있도록 Fujita et al.(1994)와 Aya et al.(1995)이 확장시킨 것이다. PIV와 비교시 LSPIV의 다른 점은 넓은 흐름 표면적을 포함하기 위하여 촬영시에 카메라의 광축과 흐름 사이의 각도가 PIV에서 이용하는 수직이 아닌 경사각을 이용하였고 이에 따라 발생하는 이미지의 왜곡을 제거하기 위하여 이미지 변환기법을 적용하여 왜곡이 없는 정사촬영 이미지로 변환시킨다. 이후부터는 PIV의 이미지 처리 방법이 적용되어 표면유속을 산정한다. 다만 이미지 변환을 PIV 이미지 처리 전에 하느냐 후에 하느냐에 따라 유속장 해석결과에 차이가 있다. PIV의 네가지 단계를 포함하여 LSPIV의 각 단계를 구분하면, seeding, illumination, recording, image transformation,image processing 및 post-processing의 여섯 단계로 나뉘어진다 (Li, 2002). LSPIV를 적용시 물표면 입자의 Tracing을 위하여 자연하천에서 사용하기에 적합한 환경친화적인 seeding 재료인 Wood Mulch를 사용하여 유속을 측정하였다. 적용지점은 용담댐 상류의 동향수위관측소 지점으로 이 지점은 한국수자원공사의 수자원시험유역이 위치하고 있다. 이미지의 촬영은 가정용 비디오 캠코더 (Sony DCR-PC 350)을 이용하여 두 줄기의 흐름에 대하여 각각 약 5분 동안의 영상을 촬영한후 이중에서 seeding의 분포가 잘 이루어진 약 1분간을 추출한후 이를 이용하여 PIV 분석에 이용하였다. 대체적으로 유속장의 계산이 무난하게 이루어지었으나 비교적 수질 상태가 양호하고, 수심이 낮고, 하상재료가 자갈로 이루어져 있어 비슷한 색상의 seeding 재료를 추적하기 어려운 구간이 발생한 부분에서는 유속의 계산이 정확히 이루어지지 않았다.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.116-121
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• 2007

TiNi shape memory alloy(SMA) was fabricated by PLD(plused laser deposition) using equiatomic TiNi target. Composition and crystallization of TiNi thin films which were fabricated in ambient Ar gas(200m Torr)and vacuum($5{\times}10^{-6}\;Torr$) were investigated. Composition of TiNi thin films was characterized by energy-dispersive X-ray spectrometry (EDXS) and crystallization was confirmed by X-ray diffraction (XRD). The composition of films depends on the distance between target and substrate but does not sensitively depend on the substrate temperature. It is found that the composition of films can be easily controlled when substrate is placed inside plume in ambient Ar gas. It is also found that the in situ crystallization temperature ($ca.\;400^{\circ}C$) in ambient Ar gas is lowered in comparison with that of TiNi film prepared under vacuum. The low crystallization temperature in ambient Ar gas makes it possible to prepare the crystalline TiNi thin film without contamination.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1219-1227
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• 2014

For development of the surface acoustic wave bandpass filter(SAW-BPF), we fabricated the high quality ZnO thin films through the step-by-step(double) deposition using two different deposition methods which are pulsed laser deposition(PLD) and RF sputtering techniques. The second growth of ZnO thin films was completed by RF sputtering method on the first ZnO thin films pre-deposited by PLD method. The characteristics of ZnO thin films were analyzed by XRD, SEM and AFM systems. The FWHM of ${\omega}$-scan analysis and the minimum RMS value of surface roughness of step-by-step grown ZnO thin films were $0.79^{\circ}$ and 1.108 nm respectively. As a result, the crystallinity and the preferred orientation of the grown ZnO thin films were kept good quality and the surface roughnesses of those were improved by post-annealing process as comparison with ZnO thin film fabricated by the conventional PLD technique only. Using these proposed ZnO thin films, we demonstrated the RF device such as SAW-BPF, built by the proposed ZnO thin films, shows that it has the bandwidth of 2.98 MHz and the insertion loss of 36.5 dB at the center frequency of 260.8 MHz, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.32-36
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• 2008

In this study, $In_2O_3-ZnO$ thin films are prepared on quartz substrates by the pulsed laser deposition and their optical and electrical properties are investigated as the function of substrate temperatures ($200{\sim}600^{\circ}C$) at the fixed oxygen pressure of 200 mTorr. The XRD measurement shows that polycrystalline $In_2O_3-ZnO$ thin films are formed. In the XRD measurement, the intensity of the (400) $In_2O_3$ peak at $35.5^{\circ}$ decreases and that of the (222) $In_2O_3$ peak at $30.6^{\circ}$ increases with the increase substrate temperature up to $500^{\circ}C$. From the result of AFM measurement, the morphology of $In_2O_3-ZnO$ thin films are observed as round-type grains. The lowest surface roughness (6.15 nm) is obtained for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$. The optical transmittance of $In_2O_3-ZnO$ thin films are higher than 82% in the visible region. The maximum carrier concentration of $2.46{\times}10^{20}cm^{-3}$ and the minimum resistivity of $1.36{\times}10^{-3}{\Omega}cm$ are obtained also for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.15-20
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• 2007

We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

• Korean Journal of Optics and Photonics
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• v.24 no.4
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• pp.176-183
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• 2013

In this paper, we report the design, fabrication and characterization of the 3-Dimensional optical receiver for a Laser Detection And Ranging (LADAR) system. The optical receiver is composed of three parts; $16{\pm}16$ Geiger Mode InGaAs Avalanche Photodiode (APD) array device operated at 1560 nm wavelength, Read Out Integrated Circuit (ROIC) measuring the Time-Of-Flight (TOF) of the return signal reflected from target objects, a package and cooler maintaining the proper operational condition of the detector and control electronics. We can confirm that the LADAR system can detect the signal from a target up to 1.2 km away, and it showed low Dark Count Rate (DCR) of less than 140 kHz, and higher than 28%-Photon Detection Efficiency (PDE). This is considered to be the best performance of the $16{\pm}16$ FPA APD optical receiver for a LADAR system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.277-277
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• 2007

$(Bi,La)_4Ti_3O_{12}$ (BLT) 물질은 결정 방향에 따른 강한 이방성의 강유전 특성을 나타낸다. 따라서 BLT 박막을 이용하여 FeRAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 현재까지 연구된 BLT 박막의 방향성 조절 결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 중착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성 (random orientation)을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법 (sputtering deposition method), PLD법 (pulsed laser deposition method) 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요 없게 된다. PVD 증착법의 적용을 위해서는 타겟 (target)의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표 되지 않고 있다. 본 실험에서는 $Bi_2O_3$, $TiO_2$ and $La_2O_3$ 분말을 이용하여 최적의 조성을 구하기 위하여 Bi양을 변화시키며 타겟을 제조 하였다. 혼합된 분말을 하소 후 pallet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 표면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. Bi양이 3.28몰 첨가된 조성에서 최대의 잔류분극 (2Pr) 값을 얻었고, 이때의 값은 약 $18{\mu}C/cm^2$ 정도였다. 최적화된 조성 ($Bi_{3.28}La_{0.75}Ti_3O_{12}$)으로 BLT 타겟을 제조하여 PLD법으로 박막을 제조하였다. 박막 제조 시 압력은 $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}\;Torr$ 범위에서 변화시켰다. $1{\times}10^{-1}\;Torr$ 압력을 제외하고는 모든 압력에서 BLT 박막이 증착되었다. 중착된 박막을 $650\;{\sim}\;800^{\circ}C$에서 30분간 열처리를 실시하고 전기적 특성을 평가한 결과, $1{\times}10^{-2}\;Torr$에서 증착한 박막에서 양호한 P-V (polarization-voltage) 이력곡선을 얻을 수 있었고, 이때의 잔류분극 (2Pr) 값은 약 $6\;{\mu}C/cm^2$ 이었다. 주사전자현미경 (SEM)을 이용하여 BLT 박막 표면의 미세구조도 관찰하였는데, 스핀코팅 법으로 증착한 경우에 관찰되었던 조대화된 입자들은 관찰되지 않았고, 상당히 양호한 입자 크기 균일도를 나타내었다.

• Journal of Welding and Joining
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• v.18 no.2
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• pp.213-213
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7NO1 spot-welded by pulse Nd: YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed: center line crack($C_{C}$), diagonal crack($C_{D}$), and U shape crack($C_{U}$). Also, HAZ crack($C_{H}$), was observed in the HAZ region, furthermore, mixing crack($C_{M}$), consisting of diagonal crack and HAZ crack was observed.White film was formed at the hot crack region in the fractured surface after it was immersed to 10%NaOH water. In the case of A5083 alloy, white films in C crack and $C_D crack region were composed of low melting phases, Fe₂Si$Al_8$ and eutectic phases, Mg₂Al₃ and Mg₂Si. Such films observed near HAZ crack were also consist of eutectic Mg₂Al₃. In the case of A7N01 alloy, eutectic phases of CuAl₂, $Mg_{32}$ (Al,Zn) ₃, MgZn₂, Al₂CuMg and Mg₂Si were observed in the whitely etched films near $C_{C}$ crack and $C_{D}$ crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Si in the case of A7N01 aooly, respectively.The $C_{D}$ and $C_{C}$ cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of $C_{M}$ crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The $C_{U}$ crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification. (Received October 7, 1999)

• The Journal of the Acoustical Society of Korea
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• v.41 no.5
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• pp.507-517
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• 2022

The PhotoAcoustic Microscopy (PAM) has been proved to be a useful tool for biological and medical applications due to its high spatial and contrast resolution. PAM is based on transmission of laser pulses and reception of PA signals. Since the strength of PA signals is generally low, not only are high-performance optical and acoustic modules required, but high-performance electronics for imaging are also particularly needed for high-quality PAM imaging. Most PAM systems are implemented with a combination of several pieces of equipment commercially available to receive, amplify, enhance, and digitize PA signals. To this end, PAM systems are inevitably bulky and not optimal because general purpose equipment is used. This paper reports a PA signal receiving system recently developed to attain the capability of improved Signal to Noise Ratio (SNR) and Contrast to Noise Ratio (CNR) of PAM images; the main module of this system is a low noise, wideband signal receiver that consists of two low-noise amplifiers, two variable gain amplifiers, analog filters, an Analog to Digital Converter (ADC), and control logic. From phantom imaging experiments, it was found that the developed system can improve SNR by 6.7 dB and CNR by 3 dB, compared to a combination of several pieces of commercially available equipment.

• Journal of the Korean Geotechnical Society
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• v.23 no.4
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• pp.15-24
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• 2007

Two kinds of temperature monitoring technology have been introduced in this study, which can measure coincidently temperatures at many points along a single length of cable. One is to use a thermal sensor cable comprizing of addressable thermal sensors. The other is to use an optic fiber sensor with Distributed Temperature Sensing (DTS) system. The differences between two technologies can be summarized as follows: A thermal sensor cable has a concept of "point sensing" that can measure temperature only at a predefined position. The accuracy and resolution of temperature measurement are up to the capability of the individual thermal sensor. On the other hand, an optic fiber sensor has a concept of "distributed sensing" because temperature is measured practically at all points along the fiber optic cable by analysing the intensity of Raman back-scattering when a laser pulse travels along the fiber. Thus, the temperature resolution depends on the measuring distance, measuring time and spatial resolution. The purpose of this study is to investigate the applicability of two different temperature monitoring techniques in technical and economical sense. To this end, diverse experiments with two techniques were performed and two techniques are applied under the same condition. Considering the results, the thermal sensor cable will be well applicable to the assessment of groundwater flow, geothermal distribution and grouting efficiency within about loom distance, and the optic fiber sensor will be suitable for long distance such as pipe line inspection, tunnel fire detection and power line monitoring etc.