• Title/Summary/Keyword: 펄스감마선

Search Result 25, Processing Time 0.032 seconds

The Development of Beam Profiling System for the Analysis of Pulsed Gamma-ray Using the Electron Accelerator (전자빔가속기를 이용한 펄스감마선 출력특성 분석용 빔프로파일링 장치개발)

  • Hwang, Young-Gwan;Lee, Nam-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.20 no.12
    • /
    • pp.2410-2416
    • /
    • 2016
  • Recently, most countries in the world have pursued a denuclearization. So it has been of interest to increase to Nuclear weapon in such as North Korea's continued nuclear test. Pulsed gamma rays produced in the nuclear explosion and the space environment can give the big damage to the electronic device in a very short period of time. To confirm the extent of damage of these electronic devices, pulsed gamma irradiation facility that can occur in nuclear weapon or space environment are required. In this paper, we implemented the pulsed gamma-ray detection module and analyzed output of the irradiation test. We have experimented using an electron beam accelerator research facilities in Pohang Accelerator similar conditions to equip and Nuclear weapon. As a result, we confirmed that the pulsed gamma rays emitted by the gamma radiation and electron beam conversion device. The results of this paper will contribute to improve the reliability and accuracy of studies for utilizing pulsed gamma rays.

A Study on Optimized Design of Wideband Pulsed Gamma-ray Detectors (광대역 펄스감마선 탐지센서 최적화설계에 관한 연구)

  • Jeong, Sang-hun;Lee, Nam-ho;Son, Eui-seung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2015.10a
    • /
    • pp.1121-1124
    • /
    • 2015
  • In this paper, we propose and demonstrate an optimal design of wideband pulsed gamma-ray detectors. Pulsed gamma-ray detectors are designed to operate in a dose rate of $1{\times}10^6{\sim}1{\times}10^8rad(Si)/s$. The input parameter was derived based on the energy ratio of pulse gamma-ray spectrum and the time of the energy. The sensor output current was calculated based on the dose rate control circuit. Using the N-type Epi Wafer, the optimum condition detection sensor was designed based on TCAD. The simulation results show that the optimal Epi layer thickness is 45um when applied voltage 3.3V. The doping concentrations are as follows : N-type is an Arsenic as $1{\times}10^{19}/cm^3$, P-type is a Boron as $1{\times}10^{19}/cm^3$ and Epi layer is Phosphorus as $3.4{\times}10^{12}/cm^3$. Pulse gamma-ray detector diameter is the 1.3mm.

  • PDF

Optimized Design and Manufacture of Wideband Pulsed Gamma-ray Sensors (광대역 펄스감마선 탐지센서 최적화 설계 및 제작)

  • Jeong, Sang-hun;Lee, Nam-ho
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.21 no.1
    • /
    • pp.223-228
    • /
    • 2017
  • In this paper, we are proposing an optimal design of wideband pulsed type gamma-ray sensors. These sensors were manufactured based on the design results and after word electrical properties were analyzed. The sensor input parameters were derived on the basis of pulsed gamma-ray spectrum and time-dependent energy rate, and the output current which were derived on the basis of the sensor sensitivity control circuit. Pulsed gamma-ray sensors were designed using the TCAD simulators. The design results show that the optimal Epi layer thickness is 45um with the applied voltage 3.3V and the diameter is 2.0mm. The doping concentrations are as follows : N-type is an Arsenic as $1{\times}10^{19}/cm^3$, P-type is a Boron as $1{\times}10^{19}/cm^3$ and Epi layer is Phosphorus as $3.4{\times}10^{12}/cm^3$. The fabricated sensor was a leakage current, 12pA at voltage -3.3V and fully depleted mode at voltage -5V. A test result of pulsed radiation shows that the sensor gives out the optimal photocurrent.

A Study of Transient Radiation Effects on Semiconductor Devices (전자소자의 과도방사선 영향 연구)

  • Lee, Nam-Ho;Oh, Seung-Chan;Whang, Young-Gwan;Kang, Heung-Sik
    • Proceedings of the KAIS Fall Conference
    • /
    • 2011.12b
    • /
    • pp.660-663
    • /
    • 2011
  • 우주방사선이나 과도펄스(Transient Radiation) 형태의 감마 방사선이 반도체에 조사되면 소자 내부에서 짧은 시간에 다량의 전하가 생성된다. 이 전하들과 증폭된 과전류는 소자의 고장(Upset, Latchup)과 오동작을 유발시키게 되고 나아가 전자부품이 소진(Burnout)되는 직접적인 원인이 된다. 본 연구에서는 이러한 핵폭 방출 과도방사선에 대한 전자부품/장비의 내방사선관련 기초연구로 군전자부품의 감마-과도방사선에 대한 피해분석 시험을 수행하고 나아가 과도방사선 방호기술 체계구축의 필요성에 대해 논하였다. 과도펄스 방사선시험은 군용으로 분류된 반도체 칩을 대상으로 포항 전자빔가속기를 사용하였다. 핵폭발 방출 과도방사선을 모사하기 위해 감마선 변환장치를 MCNP 설계를 통해 제작하고 단일모드의 마이크로초 단위 감마펄스 방사선을 방출시켜 시험대상 칩을 부착한 시험보드에 조사하는 과정으로 실험을 진행하였다. 온라인 고속 측정장치를 통한 전자소자의 과도방사선시험에서 다양한 피해현상을 측정할 수 있었고, 열상카메라 촬영을 통하여 과열상태를 관측함으로써 피해현상의 검증과 더불어 소진현상으로의 전개 가능성을 확인하였다.

  • PDF

A Study on the Measurement Circuit System of RI Gauge (RI 계기의 측정회로 시스템에 관한 연구)

  • 김기준
    • Proceedings of the Korea Society for Industrial Systems Conference
    • /
    • 1999.05a
    • /
    • pp.217-222
    • /
    • 1999
  • In this study an objection, to be needed at public works, is to develop a measurement circuit of a gauage using radioisotope for compaction control. The developed gauage consists of measuring circuits for gamma-rays and thermal neutrons, a high voltage supply unit, and a microprocessor. To obtain meaningful numbers of pulse counts, parallel five and two circuits are provided for gamma-rays and thermal neutrons, respectively. Also, to minimize effects of natural environmental radiation and electrical noise, circuits are electrostatically shielded and pulses made by ripples are eliminated by taking frequency of high voltage supplied to the circuit and pulse height of ripples into consideration.

  • PDF

Electronic Circuit System of a Portable Rl Gauge for Compaction Control (성토다짐용 휴대용 Rl 계기의 전자회로 시스템)

  • 김기준
    • Journal of Korea Society of Industrial Information Systems
    • /
    • v.4 no.2
    • /
    • pp.32-38
    • /
    • 1999
  • In this study, an objection is to develop a electronic circuit of a gauage using radioisotope for compaction control to be needed at public works The developed gauage makes use of radioisotope with the activity exempted from domestic atomic law and consists of measuring circuits for gamma-rays and thermal neutrons, a high voltage supply unit and a microprocessor. To obtain meaningful numbers of pulse counts, parallel five and tow circuits are provided for gamma-rays and thermal neutrons, respectively. Also, to minimize effects of natural environmental radiation and electrical noise, circuits are electrostatically shielded and pulses made by ripples are eliminated by taking frequency of high voltage supplied to the circuit and pulse height of ripples into consideration One-chip microprocessor is applied to process various counts, results are stored, Enough and meaningful numbers of pulses are counted with the prototype gauage for compaction control.

  • PDF

A Parametric Study of Pulsed Gamma-ray Detectors Based on Si Epi-Wafer (실리콘 에피-웨이퍼 기반의 펄스감마선 검출센서 최적화 연구)

  • Lee, Nam-Ho;Hwang, Young-Gwan;Jeong, Sang-Hun;Kim, Jong-Yeol;Cho, Young
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.7
    • /
    • pp.1777-1783
    • /
    • 2014
  • In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

Development of Neutron, Gamma ray, X-ray Radiation Measurement and Integrated Control System (중성자, 감마선, 엑스선 방사선 측정 및 통합 제어 시스템 개발)

  • Ko, Tae-Young;Lee, Joo-Hyun;Lee, Seung-Ho
    • Journal of IKEEE
    • /
    • v.21 no.4
    • /
    • pp.408-411
    • /
    • 2017
  • In this paper, we propose an integrated control system that measures neutrons, gamma ray, and x-ray. The proposed system is able to monitor and control the data measured and analyzed on the remote or network, and can monitor and control the status of each part of the system remotely without remote control. The proposed system consists of a gamma ray/x-ray sensor part, a neutron sensor part, a main control embedded system part, a dedicated display device and GUI part, and a remote UI part. The gamma ray/x-ray sensor part measures gamma ray and x-ray of low level by using NaI(Tl) scintillation detector. The neutron sensor part measures neutrons using Proportional Counter Detector(low-level neutron) and Ion Chamber Type Detector(high-level neutron). The main control embedded system part detects radiation, samples it in seconds, and converts it into radiation dose for accumulated pulse and current values. The dedicated display device and the GUI part output the radiation measurement result and the converted radiation amount and radiation amount measurement value and provide the user with the control condition setting and the calibration function for the detection part. The remote UI unit collects and stores the measured values and transmits them to the remote monitoring system. In order to evaluate the performance of the proposed system, the measurement uncertainty of the neutron detector was measured to less than ${\pm}8.2%$ and the gamma ray and x-ray detector had the uncertainty of less than 7.5%. It was confirmed that the normal operation was not less than ${\pm}15$ percent of the international standard.

하나로 1차 배관의 중성자 발생원 분석

  • 김명섭;홍광표;전병진
    • Proceedings of the Korean Nuclear Society Conference
    • /
    • 1998.05a
    • /
    • pp.227-232
    • /
    • 1998
  • 하나로 1차 배관에서 중성자를 측정하고 발생 원인을 분석하였으며, 이를 통하여 중성자 계측 계통을 이용하여 핵연료 파손을 감시할 수 있는 가능성을 검토하였다. 중성자 측정에는 BF$_3$비례 계수관을 이용하였고, 1차 배관의 주 방사선원인 N-16에 의한 감마선 펄스의 영향은 무시 할 정도로 작았다. 중성자의 발생 원인을 규명하기 위해 원자로 정지 전후에 중성자 계수율의 변화를 측정하였다. 편자로의 정상 운전시 1차 배관에서 발생되는 중성자는 물속의 중수소가 고에너지 감마선을 흡수하여 방출하는 광중성자와 핵연료의 표면 오염에 의해 발생된 지발 중성자라고 가정하여 원자로 정지 전후의 발생량 변화를 계산하였다. 계산 결과와 측정값을 비교하여 1차 배관 주변에서 측정된 중성자 가운데 지발 중성자가 약 70 %, N-16에 의한 광중성자가 약 30%임을 확인하였다. 핵연료의 표면 오염 정도로 발생하는 지발 중성자도 민감하게 측정되므로, 이러한 지발 중성자 계측법이 핵연료의 손상 여부를 알아낼 수 있는 유용한 방법임을 확인할 수 있었다.

  • PDF

An Experimental Analysis for a High Pulse Radiation Induced Latchup Conformation (고준위 펄스방사선에 의한 전자소자 Latchup의 발생시험 및 분석)

  • Lee, Nam-Ho;Hwang, Young-Gwan;Jeong, Sang-Hun;Kim, Jong-Yeol
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.12
    • /
    • pp.3079-3084
    • /
    • 2014
  • When an integrated circuit device is burned out under high-intense radiation and device-level simulation that usually requires manufacturer's proprietary information is not available, experimental conformation of a failure mechanism is often the only choice. To distinguish Latchup from other causes experimentally, a new combination of multiple techniques have been developed and demonstrated. Power supply circumvention, hot-spot monitoring using an infrared camera, and supply current monitoring techniques were implemented for the conformation of the Latchup.