• Applied Microscopy
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• v.36 no.3
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• pp.209-216
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• 2006

Accuracy and precision of the goniometer and the specimen holder should be measured and corrected to improve reliability of 3-D structure analysis using transmission electron microscopy (TEM). In this study, we described the operation principle and performance of the Gatan rotation holder. Through analysis of the images taken inside the microscope, rotation angles were measured within the accuracy of ${\pm}0.42^{\circ}$. For comparison the rotation angles were measured outside the microscope using a home-made measurement tool, which resulted in the accuracy of ${\pm}0.6^{\circ}$. Additionally, we found abnormal specimen drifts during rotation probably due to the unstable engagement between the specimen cup and the rotation belt.

• 전자공학회논문지 IE
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• v.47 no.2
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• pp.8-12
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• 2010

TEM is a powerful tool for semiconductor material analyses in structure or biological sample in micro structure. TEM observation need to make to coincide specimens for special purpose. in this paper, we have experimented for minimum surface damage on bulk wafer and patterned specimen by various conditions such as accelerating energy, depth of ion beam, ion milling types, and etc. in various specimen preparation methods by FIB (Focus Ion Beam). The optimal qualified specimens are contain low mounts of surface damage(about 5 nm) on patterned specimen.

• Electrical & Electronic Materials
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• v.26 no.11
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• pp.14-23
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• 2013

• Ceramist
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• v.10 no.5
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• pp.55-62
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• 2007

• Ceramist
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• v.20 no.2
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• pp.66-73
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• 2017

• Ceramist
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• v.16 no.3
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• pp.17-26
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• 2013

• Ceramist
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• v.5 no.3
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• pp.12-20
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• 2002

• Journal of Energy Engineering
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• v.25 no.1
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• pp.192-197
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• 2016

We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.

• 한국전자현미경학회:학술대회논문집
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• 2005.11a
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• pp.177-180
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• 2005

• Electrical & Electronic Materials
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• v.31 no.5
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• pp.17-24
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• 2018