• Journal of Korean Society of Water and Wastewater
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• v.18 no.5
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• pp.598-607
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• 2004

In this study, the effects of two pre-treatment processes were observed prior to membrane filtration: pre-coagulation and pre-ozonation. To compare the effect of two above-mentioned pre-treatments, we adopted the four schemes: first one is direct membrane filtration of river surface water, second one is membrane filtration after pre-coagulation, third one is membrane filtration after pre-ozonation and fourth one is membrane filtration after pre-coagulation and pre-ozonation. There are two exceptional characteristics in applied processes. One is the usage of the MF membrane which has high ozone resisting characteristic. Therefore, ozone resides in membrane module during filtration. The other is adoption of Jet Mixed Separator (JMS) as coagulation-sedimentation process. The change in transmembrane pressure and permeate water quality were also examined. As a result, considering the filtration performance efficiency and permeate water quality, the process composed of filtration with combination of both pre-coagulation and pre-ozonation was proved most effective. The improved efficiency was due to the reduction of loading rate of fouling inducing materials to membrane module by coagulation process as well as variable reactions, such as degradation, particle destabilization and coagulation, occurred by residual ozone in membrane module. The additional effect of pre-coagulation before pre-ozonation is suppression of AOC, one of the by-products induced by ozonation. Therefore, combination of pre-coagulation and pre-ozonation is the effective process to overcome the major de-merit of ozonation i.e. by-products formation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.1-257.1
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• 2015

Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

• KSBB Journal
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• v.21 no.5
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• pp.336-340
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• 2006

High-density perfusion cultivation was performed to produce extracellular polysaccharide(ECP) as immunostimulating agents in suspension cell cultures of Angelica gigas Nakai. In batch culture, the maximum cell density was 16.8 gDCW/L at day 6 and 0.9 g/L of ECP was obtained at day 8. When the medium exchange was started at the fifth day after inoculation for the perfusion culture, high concentration of the cells at 23.8 gDCW/L could be achieved with continuous production of ECP. Treatments of ultrasound and Pluronic F-68 were found to be helpful for the secretion of intracellular ECP into the culture medium.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.55-63
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• 1998

A and Y type zeolitic crystal films were synthesized on porous supports from the reaction mixture of 1.9 $SiO_2-1.5\;Na_2O-Al_2O_3-40\;H_2O$ and 10 $SiO_2-7\;Na_2O-Al_2O_3-280\;H_2O$ composition, respectively. The zeolite film was characterized by XRD and SEM. The crystals grown on the porous matrix were very closely bound together and the thickness of membrane was about 8-15$\mu \textrm{m}$. The densely intergrown crystals could be also synthesized by the hydrothermal treatment at $100^{\circ}C$ after pressing the reaction mixture without addition of water. A zeolite membrane crystallized as a thin film showed the selective permeability of water from water and methanol mixture through the molecular sieving activity of micropores.

• Korean Journal of Food Science and Technology
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• v.26 no.6
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• pp.740-744
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• 1994

This study was undertaken to prove the suppressing effect of green tea on the intestinal absorption of heavy metals using in vitro membrane filtration system. From drinking water contaminated with 10 and 100 times level of water quality standard for heavy metals, the removal ratio of lead (Pb) was $50{\sim}70%$ by green and black teas, and $30{\sim}40%$ by roasted barley tea. The removal ratio of cadmium (Cd) was $30{\sim}40%$ by green tea and black teas, and $10{\sim}20%$ by roasted barley tea. The removal effect from drinking water contaminated with both lead and cadmium was lower than that from water contaminated singly with lead or cadmium. It appears that tea components and filter membrane compete toward the adsorption of two heavy metals. Among the extraction conditions of raw tea materials at $70^{\circ}C$, 2 minutes and $95^{\circ}C$ , 10 minutes, the removal ratios of heavy metals were similar.

• Membrane Journal
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• v.20 no.1
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• pp.8-12
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• 2010

Poly(3,4-ethylenedioxythiophene) (PEDOT), which has the highest stability in conducting polymer was employed to electrochromic (EC) film and studied about electrochromic properties according to the film fabrication method. PEDOT films were coated by two different methods, electropolymerization (EP) and vapor phase polymerization (VPP). Both of PEDOT films showed dark blue color at dedoped neutral state. Spectroelectrochemistry, switching ability and stability of the devices were investigated by UV-Vis Spectrophotometer and Cyclic voltammetry. Surface morphologies of the PEDOT VPP film at oxidized and reduced state were obtained by AFM. The average surface roughness of the PEDOT-VPP film was 50 nm and more homogeneous than that of the PEDOT-EP. The EC property from the PEDOT-VPP film was improved compared to that of the PEDOT-EP film, to show a response time of 1.5 sec, transmittancechange of 49%, and coloration efficiency of 402.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.2-41.2
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• 2011

Display 산업의 확대로 인해 광학적 특성 및 전기적 특성이 우수한 TCO (Transparent conductive oxide) 연구가 활발히 진행되고 있다. 기존에는 ITO가 대부분의 분야에서 이용되었지만 In의 경제적인 단점으로 인해 새로운 대체물로써 ZnO가 떠오르고 있다. ZnO는 전형적인 n-type 반도체이며, wide band gap 물질로써 Al, Ga, B과 같은 3 족 원소를 doping 함으로써 광학적 및 전기적 특성을 향상시킬 수 있다. 최근에는 ZnO의 이온반경과 비슷한 Ga을 도핑한 Ga-doped ZnO 박막에 대한 연구가 활발히 진행되고 있다. 이는 ZnO에 Ga을 도핑함으로써 격자결함을 최소화 시키고 carrier concentration 및 hall mobility를 향상시켜 전기전도도의 향상을 이루기 때문이다. 본 연구에서는 $Ga_2O_3$이 3wt% doping 된 ZnO rotating cylindrical target 을 DC magnetron sputtering 을 이용하여 2 kW의 파워와 70 kHz의 주파수를 고정하고, 증착 온도를 변화시켜 유리 기판 위에 Ga-doped ZnO 박막을 증착 하였다. 증착 시 온도가 Ga-doped ZnO 박막에 미치는 영향을 관찰하기 위해 박막 표면의 조성을 분석하였고, 결정성 및 전기적 특성의 변화를 통해 박막의 특성을 비교 평가하였다. Ga-doped ZnO 박막의 표면과 두께는 SEM (Scanning electron microscope) 분석을 통해 관찰하였고, XRD (X-ray diffractometer) 를 이용하여 결정학적 특성을 확인하였다. 또한 Van der Pauw 방법을 이용한 hall 측정을 통해 resistivity, carrier concentration, hall mobility를 분석하였고, UV-Vis를 이용하여 박막의 투과율을 분석하였으며, 이를 토대로 투명 전도막으로써 Ga-doped ZnO 박막의 응용 가능성을 평가하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.713-719
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• 2000

In order to Prepare the$Ge_xSi_{1-x}/Si$(111) heterosructure by solid phase epitaxy (SPE), about 1000A of Au and about 1000A Ge were sequentially deposited on the Si(111) substrate. The resulting Ge/Au/Si(111) samples were isochronically annealed in the high vacuum condition. The behaviors of Au and Ge during thermal annealing and the structural Properties of $Ge_xSi_{1-x}$ films were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). The a-Ge/Au/Si(111) structure was converted to the Au/GeSi/Si(111) structure. Defects such as stacking faults, point defects and dislocations were found at the GeXSil-X(111) interface, but the film was grown epitaxially with the matching face relationship of $Ge_xSi_{1-x}/$(111)/Si(111). Twin crystals were also found in the $Ge_xSi_{1-x}/$(111) matrix.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.136-136
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• 2003

카본나노튜브는 상용되는 기존의 센서에 비해 표면적이 넓어 감도가 놀고 응답속도가 빠르다. 또한 나노 스케일의 크기를 가지므로 고직접화를 실현할 수 있으며 기능복구성이 뛰어나 상온동작을 통한 저전력화가 가능하다. 본 실험에서는 아크방전법으로 합성한 카본나노튜브를 가스센서로 제작하여 상온에서 NH$_3$, NO 가스와의 반응 특성을 평가하였다. 또한 origin soot와 이를 정제한 purified CNT를 SEM(주사전자현미경), TEM(투과전자현미경), Raman scattering spectroscopy(라만 산란 분광기)를 통해 재료적 특성을 조사하고 이를 가스 감응 곡선과 연관하여 비교, 분석하였다. 전극에 CNT막을 형성시키기 위해 3g의 N,N dimethylformamide 용액에 CNT 10mg을 분산시킨 후 2시간동안 초음파 처리하였다. 이 용액을 mask를 이용해 전극 위에 막을 형성시킨 후 20$0^{\circ}C$에서 열처리하였다. 이렇게 제조된 origin soot와 purified CNT센서는 flow system을 이용하여 측정하였고 $N_2$분위기 하에서 센서를 안정화시킨 후 측정가스와의 반응을 살펴보았다 센서의 반응속도, 회복속도, 감도 등의 측정결과 origin soot는 NH$_3$ 25ppm에서 20%, purified CNT는 1%의 감도를 보여 20배 높은 감도를 보았다. NO 25ppm의 경우에도 origin soot가 8%, purified CNT는 0.8%의 감도를 보여 10배 높은 감도를 보였다. 이는 탄소입자가 많은 origin soot가 purified CNT 보다 표면적이 넓어 보다 많은 가스 흡착 싸이트를 가지기 때문이다. 하지만 origin soot는 반응시간과 회복속도가 Purified CNT 보다 2배 이상 느려 표면적 증가에 따른 가스 흡착과 탈착 능력이 떨어짐을 알 수 있었다. 또한 CNT와 가스사이의 전하 이동 방향에 따라 NH$_3$는 양의 감도를 NO는 음의 감도를 보였다 이는 전하의 이동 방향에 따라 전하와 캐리어 사이의 결합 및 해리가 일어나게 되고 결국 카본나노튜브 내의 캐리어 수를 증감시킴에 따라 나타나는 현상이다. 이러한 가스의 감도는 농도에 따라 증가하였으며 origin soot를 이용하여 1ppm이하의 NH$_3$ 가스를 검출할 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1393-1398
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• 2015

In this study, the electrical and optical properties of GZO (Ga-doped ZnO) thin films prepared on PES substrates by RF magnetron sputtering method with various working pressures (5 to 20 mTorr) were investigated. All GZO thin films exhibited c-axis preferential growth regardless of working pressure, the GZO thin film deposited at 5 mTorr showed the most excellent crystallinity having 0.44˚ of FWHM. In AFM observations, surface roughness exhibited the lowest value of 0.20 nm in a thin film produced by the working pressure 5 mTorr. Figure of merits of GZO thin film deposited at 5 mTorr showed the highest value of 6652, in this case resistivity and average transmittance in the visible light region were 6.93×10^-4Ω-cm and 81.4%, respectively. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed.