Analysis of Tunneling Current of Asymmetric Double Gate MOSFET for Ratio of Top and Bottom Gate Oxide Film Thickness (비대칭 DGMOSFET의 상하단 산화막 두께비에 따른 터널링 전류 분석)
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- Journal of the Korea Institute of Information and Communication Engineering
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- v.20 no.5
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- pp.992-997
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- 2016