• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.18-21
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• 2006

유기 반도체로서 트랜지스터에 사용되기 위해서 유기절연막은 $SiO_2$ 표면을 유기물로 처리하여 $SiO_2$ 박막 표면의 화학적 특성을 변화시키고 절연특성을 개선 함으로서 단위 소자의 특성을 개선시키고 있다. 그래서 $SiO_2$ 표면 위에 OTS를 처리하여 누설전류를 측정하였다. OTS처리함량에 따라서 누설전류가 흐르는 경향성은 다르게 나타났으며, 0.2% 처리된 박막에서 누설전류는 가장 적게 나타났다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.108-109
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• 2012

DLC 박막은 고경도 및 저마찰의 우수한 물리적 특성을 갖는 것으로 널리 알려져 다양한 산업분야에 적용이 되고 있다. 또한, 그 응용 분야 확대를 위해 DLC 박막의 후막화, 대면적 균일처리, 경제성 확보 등의 연구 노력이 지속되고 있다. 특히, DLC 박막은 높은 내부응력에 의해 후막화가 어렵고, 탄소와 수소의 화학적 결합에 의한 고형 물질로 내열성이 다른 경질코팅 물질 보다 취약하다는 단점을 갖고 있다. 본 연구는 DLC 박막의 내부응력 완화를 위해 실리콘 및 질소 원소를 함유하여 박막을 제작하고, 제작 공정 조건이 박막의 물성에 미치는 영향을 연구하였다.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.1
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• pp.23-28
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• 1996

Hydrogenated amorphous carbon films were fabricated by low frequency(60Hz) Plasma enhanced Chemical vapor deposition(LF-PECVD) at room temperature. The LF_PECVD has a couple of advantages as follows: cheap, and the employment of low power density makes the damage of samples small. The a-C:H films deposited in this work were highly transparent(99%), highly resistance(109-1011${\Omega}$-cm), and very uniform. The samples were deposited by the decomposition of CH4 and H2 mixing gas in the pressure rate range of 1% to 30%. The deposition rates, optical gap, and hydrogen contents are increased with CH4 contents.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.111-117
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• 1995

TiO2 thin films were prepared on a (100)silicon wafer using a chemical vapor deposition(CVD) method. The deposition experiments were performed using the TTIP in the deposition temperature ransing from 200 content. The deposition rate of TiO2 was increased with the substrate temperature and the oxygen content. The thickness of the deposited thin film and the compositional analysis of this thin films with theoxygen content were measured using Ellipsometry, SEM and ESCA, respectively. The deposited thin film was composed of a bilayer, external TiO2 and internal Ti. Carbon as a residual impurity was found to remain when zero sccm O2 was purged into a reaction chamber and the composition of the deposited thin film was found to change Ti into TiO in a deeper layer. However, when 600sccm O2 was supplied to a reaction chamber, it has been found to reside less carbon content than without O2. Finally, in the condition of 1200sccm O2, no impurity level of carbon was observed and a deeper layer consisted of the Ti composite, even though the deposited surface was composed of TiO2.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.24-29
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• 2009

The SiOC film as inter layer insulator was researched the reason of the decreasing the dielectric constant by the ionic polarization and electronic polarization, respectively. The dielectric constant was measured using the conventional C-V measurement system, and the reflective index owing to the electronic polarization. Two kinds of dielectric constants were compared and then induced the origin of low-k materials. The chemical properties of the SiOC film were analyzed by the FTIR spectra, and the carbon content was obtained by the deconvoluted data of FTIR spectra. The variation of the carbon content tended to similar to the trend of reflective index, but was in inverse proportion to the dielectric constant. The effect of the electronic polarization did not affect the decreasing the dielectric constant, however the ionic polarization decreased effectively the dielectric constant of the SiOC film.

• Journal of the Korean Applied Science and Technology
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• v.34 no.4
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• pp.1017-1024
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• 2017

Carbon thin films were deposited by HiPIMS(High Power Impulse Magnetron Sputtering). The properties and microstructures of carbon thin film were investigated with power, pressure, bias voltage and duty cycle. As the HiPIMS power increased, the deposition thickness increased and the surface tended to be rough. The increase in pressure also tended to make the surface rough, but the deposition thickness was not proportional to the pressure. As the bias voltage increased, the surface roughness became worse, the deposition thickness increased and then decreased from the critical bias voltage. Changes in the duty cycle have caused problems such as arcing, which is affected by the chamber structure and the size of the target. The $sp^2/sp^3$ fractions of thin films were estimated by XPS and it was confirmed that the fraction of thin films made by HiPIMS were larger than the fraction of thin films made by DC sputtering.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.158-158
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• 1999

• Information Display
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• v.15 no.6
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• pp.11-16
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• 2014

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.329-329
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• 2008

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.72.1-72
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• 2002