• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.965-970
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• 2018

In this paper, the transition of the folded substrate integrated waveguide (FSIW) using two substrates is suggested and applied to the bandpass filter. The FSIW has similar characteristics with the SIW and can be reduced the width of the SIW. The transition between the FSIW to the microstrip is designed by using shorted quarter wavelength line. Also, the bandpass filter is designed by using the FSIW and the elliptic lowpass filter of 5 section. Fabricated bandpass filter has the center frequency of 5.75 GHz and the bandwidth of 33.2%. Also, the insertion loss and return loss at the center frequency are 0.63dB and 19.1dB, respectively.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.49-58
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• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.5
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• pp.250-257
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• 1985

High order filters are usually realized by cascading second order stages. In this paper, a simple method of pole-zero pairing in the high order band-pass and band-reject filter realization of the elliptic functions is proposed for the enhancement of overall dynamic range. Futrhermore, the optimum sequence of the various biquads of high-pass notch, low-pass notch and symmetrical notch etc., is developed for the elliptic band-pass and band-reject filters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.706-712
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• 2004

This paper presents the design technique of output multiplexer(OMUX) for the Ka-band satellite transponder. Output multiplexer consists of low-pass filter(LPF), channel filter and manifold. Channel filters adopt dual-mode technique in design for mass and volume reduction and frequency response of channel filters is 4-pole elliptic response for high frequency selectivity. w-pass filters are designed to be of 13th order corrugated type for high rejection characteristic over reception band of satellite transponder. After initial design of channel filters and manifold, we optimized only a few design parameters for fast and easy optimization instead of optimizing all the design parameter. Measured results of a realized output umltiplexer for Ka-band satellite transponder show good agreement with the computed ones.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.2
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• pp.140-147
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• 1987

In this paper, seven-order elliptic low-pass passive network is synthesized by using doublyterminated ladder network is directly transformed into the active network which has the advantage of low sensitivity and can be realized conveniently. The circuit simulation results of passive network and active network synthesized with FDNR and Leap-frog technique are compared, and it is proved that the two rest work has the same characteristics.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.2
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• pp.184-191
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• 1993

Continuous-time integrated filters, implemented in MOS VLSI technology, have been receiving considerable attention. In this paper, a continuous-time fifth order elliptic low-pass MOSFET-C filter has been designed with a cutoff frequency 3,400Hz. First an active RC filter is designed using cascade method which each block can be tunable. And then the resistors of an active RC network are replaced by a linear resistor using NMOS depletion transistors operated in the triode region. This continuous-time MOSFET filter have simpler structure than switched-capacitor filter, so reduce the chip area. The designed MOSFET-C filter characteristics are simulated by PSPICE program.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.257-260
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• 2000

In this paper, a Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback (CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using 0.25${\mu}{\textrm}{m}$ CMOS n-well parameters. The simulation results show 105MHz cutoff frequency and 2.4㎽ power dissipation with a 2.5V supply voltage.