• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.11
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• pp.2085-2092
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• 2016

One of the most important properties of the IC substrate is that it should be uniform over large areas. Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infrared techniques of inspection. In particular, a high spatial resolution, near infrared absorption method has been adopted to directly observe defects in semi-insulating GaAs. This technique, which relies on the mapping of infrared transmission, is both rapid and non-destructive. This method demonstrates in a direct way that the infrared images of GaAs crystals arise from defect absorption process. A new interpretation is presented for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in semi-insulating GaAs. The low temperature photoquenching experiment has demonstrated in a direct way that the contrast inverse images of GaAs wafers arise from both absorption and scattering mechanisms rather than charge re-distribution or local variation of bandgap.

• The Journal of the Acoustical Society of Korea
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• v.29 no.8
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• pp.504-508
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• 2010

In conventional diagnostic ultrasound strain imaging, when displaying strain image on a monitor, human visual characteristics are utilized such that hard regions are displayed as dark and soft regions are displayed as bright. Thus, hard regions representing tumor or cancer are displayed as dark, decreasing the contrast inside the lesion. Because the lesion area is stiff and thus displayed as dark, a method of inverting the image brightness and thereby increasing the contrast in the lesion for better diagnostic purposes is proposed wherein a postcompression signal is extended in the time domain by a factor corresponding to the reciprocal of the amount of the applied compression using a technique termed globally uniform stretching. Experiments were carried out to verify the proposed method on an ultrasound elasticity phantom with radio-frequency data acquired from a diagnostic ultrasound clinical scanner. It is found that the new method improves the contrast-to-noise ratio by a factor of up to about 1.8 compared to a conventional strain imaging method that employs a reversed gray color map without globally uniform stretching.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.861-868
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• 2017

Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.