• Title/Summary/Keyword: 커플링 효과

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Mechanical Properties of Talc-Filled Polypropylene : Coupling Agent Effect (Talc로 충전된 폴리프로필렌의 기계적 물성 : 커플링제 효과)

  • 김주성;최미애;박태욱;김덕준
    • Polymer(Korea)
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    • v.24 no.6
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    • pp.770-776
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    • 2000
  • The effect of unreactive coupling agent on mechanical and thermal properties of talc-filled polypropylene (PP) composites was studied. Stearic and oleic acids were introduced as coupling agents, and tensile, flexural, and impact strength, thermal stability and melting transition temperature were measured and analyzed according to the types and concentration of coupling agents. Tensile and flexural strength were enhanced by introduction of coupling agent and the maximum effect was observed at the concentration of 3 wt% of coupling agent. Tensile and flexural strength of PP treated with oleic acid were higher than those of PP treated with stearic acid. but impact strength vice-versa. The reasons for these results were postulated by analyzing morphologies of talc-filled PP observed by SEM.

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Characterization and Formation of Chemical Bonds of Silica-Coupling Agent-Rubber (실리카-커플링제-고무의 화학 결합 형성과 특성 분석)

  • Ko, Eunah;Choi, Sung-Seen
    • Elastomers and Composites
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    • v.49 no.3
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    • pp.239-244
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    • 2014
  • Reaction between silica and silane coupling agent without solvent was investigated using transmission mode Fourier transform infrared spectroscopy (FTIR) and thermogravimetric analysis (TGA). Bis[3-(triethoxysilylpropyl) tetrasulfide] (TESPT) was used as a silane coupling agent. After removing the unreacted TESPT, formation of chemical bonds was analyzed using FTIR and content of reacted TESPT was determined using TGA. Content of the coupling agent bonded to silica increased with increase in the coupling agent content, but the oligomers were formed by condensation reaction between coupling agents when the coupling agent was used to excess. In order to identify bonds formed among silica, coupling agent, and rubber, a silica-coupling agent-BR model composite was prepared by reaction of the modified silica with liquid BR of low molecular weight and chemical bond formation of silica-coupling agent-BR was investigated. Unreacted rubber was removed with solvent and analysis was performed using FTIR and TGA. BR was reacted with the coupling agent of the modified silica to form chemical bonds. Polarity of silica surface was strikingly reduced and particle size of silica was increased by chemical bond formation of silica-coupling agent-BR.

Study on Blast Effects of Decoupling Condition and Polymer Gel Coupling in Single Blast Hole by Numerical Analysis (디커플링 조건 및 폴리머 겔 적용에 따른 발파공 발파위력 영향에 관한 수치해석 연구)

  • Ko, Young-Hun;Jung, Seung-Won;Yang, Hyung-Sik
    • Explosives and Blasting
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    • v.36 no.2
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    • pp.1-9
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    • 2018
  • In this paper, AUTODYN blasting simulation of single blast hole were conducted to evaluate the blasting effects of Polymer Gel. The coupling mediums used as the filling material around an explosive charge were air and gelatin. each simulation case was D I(decoupling index) 1.0, 1.25, 1.56 with air or polymer gel coupling materials. In order to evaluate blast effects full charge model was used as a reference for evaluation of blasting effects. The results of numerical analysis showed that fragmentation of a limestone model of were much more fractured by polymer gel medium than by air medium. As expected, the transmitted peak pressure was higher polymer gel coupled model than in air medium.

The Damage of Microcontroller Devices due to Coupling Effects by High Power Electromagnetic Wave (고출력 전자기파의 커플링 효과에 의한 마이크로컨트롤러 소자의 피해)

  • Hong, Joo-Il;Hwang, Sun-Mook;Huh, Chang-Su
    • Journal of the Korea Institute of Military Science and Technology
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    • v.11 no.6
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    • pp.148-155
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    • 2008
  • We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

Split-Step Time-Domain Analysis and Design of Fiber-optical Coupler ADM (광섬유 커플러 ADM의 연산자 분리 시영역 해석 및 설계)

  • Kang, Joon-Hwan
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.1126-1127
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    • 1999
  • 연산자 분리 시영역 모델을 이용하여 광섬유 커플러 ADM(add-drop multiplexer)의 필터링 효과를 분석하였다. 이 모델은 방향성 결합기나 브래그 격자를 포함하는 소자의 해석에 유용하다. 본 논문에서는 비대칭 구조를 고려했으며 결합계수, 코어의 반경, 개구수, 굴절율 변조 등의 파라미터를 이용하여 최적의 필터링 효과를 얻기 위한 구조를 설계하였다.

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Periodically Corrugated Transmission Line Design for Crosstalk Reduction (Crosstalk 감소 효과를 갖는 주기적인 요철 모양의 전송 선로 설계)

  • Oh, Jang-Teak;Park, Ik-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.7
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    • pp.774-783
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    • 2012
  • In this paper, a periodically corrugated transmission line is proposed. The proposed transmission line can reduce crosstalk between transmission lines. The corrugated transmission line can adjust the amount of inductive coupling and capacitive coupling equally. Thus, the crosstalk is effectively reduced because the inductive coupling and capacitive coupling cancel each other. The corrugated transmission line is fabricated on RO4003 substrate with a dielectric constant of 3.38 and a thickness of 0.508 mm. The simulated far-end crosstalks of conventional transmission line and corrugated transmission line with a period of A=1 mm have maximum values of -3.6 dB and -22 dB, respectively, up to 30 GHz. Measurement results showed that far-end crosstalks of the conventional and corrugated transmission line have maximum values of -6.3 dB and -20.5 dB, respectively, up to 30 GHz.

Creep-Fatigue Life Design with Various Stress and Temperature Conditions on the Basis of Lethargy Coefficient (응력 및 온도 변화시 무기력계수를 이용한 크리프-피로 수명설계)

  • Park, Jung-Eun;Yang, Sung-Mo;Han, Jae-Hee;Yu, Hyo-Sun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.2
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    • pp.157-162
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    • 2011
  • High temperature and stress are encounted in power plants and vehicle engines. Therefore, determination of the creep-fatigue life of a material is necessary prior to fabricating equipments. In this study, life design was determined on the basis of the lethargy coefficient for different temperatures, stress and rupture times. SP-Creep test data was compared with computed data. The SP-Creep test was performed to obtain the rupture time for X20CrMoV121 steel. The integration life equation was considered for three cases with various load, temperature and load-temperature. First, the lethargy coefficient was calculated by using the obtained rupture stress and the rupture time that were determined by carrying out the SP-Creep test. Next, life was predicted on the basis of the temperature condition. Finally, it was observed that life decreases considerably due to the coupling effect that results when fatigue and creep occur simultaneously.

Understanding Interfacial Charge Transfer Nonlinearly Boosted by Localized States Coupling in Organic Transistors (유기트랜지스터 내부 편재화 준위간 커플링에 의한 계면 전하이동의 비선형적 가속화 현상의 이해)

  • Han, Songyeon;Kim, Soojin;Choi, Hyun Ho
    • Journal of Adhesion and Interface
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    • v.22 no.4
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    • pp.144-152
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    • 2021
  • Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.

Accurate SSN Analysis using Wideband Decoupling Capacitor Model (광대역 디커플링 캐패시터 모델을 이용한 정확한 SSN 분석)

  • 손경주;권덕규;이해영;최철승;변정건
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.7
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    • pp.1048-1056
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    • 2001
  • Decoupling capacitors are commonly used to reduce the effect of SSN propagated through parallel power and ground planes in high-speed multilayer printed circuit boards (PCBs). In this paper, we introduced a simple high frequency measurement and proposed a wideband (50 MHz ∼3 GHz) equivalent circuit model for decoupling capacitor considering high frequency parasitic effects. The proposed model can be easily combined with the SPICE model of power supply planes far SSN analysis. The circuit simulations with the proposed model show good agreement with the measurement results. Also, we expect to accurately analyze the noise reduction effect as a function of value and location using the proposed model of decoupling capacitor.

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