• Journal of Engineering Education Research
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• v.13 no.1
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• pp.62-69
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• 2010

Program learning outcome is widely used for assessing and improving program quality. There are various methodologies that can measure program quality and improve program learning outcomes. In this paper, we used formative approach in Capstone design course, since it is the most effective in terms of improving program learning outcomes due to the course's intrinsic nature. To integrate a formative approach into Capstone design course, we develop a feedback structure which is a key element in formative approach and define several sub phases that manage feedback structures and their own evaluation criteria. As a result, we observed a noticeable improvement for students performance in capstone design course.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.23-28
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• 2009

We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

• Microbiology and Biotechnology Letters
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• v.37 no.3
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• pp.287-292
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• 2009

The nucleocapsid (N) protein of porcine reproductive and respiratory syndrome virus (PRRSV) is a basic multifunctional protein which has been reported to be a serine phosphoprotein with yet-identified functions. As a first step towards understanding the general role of N protein phosphorylation during virus replication, the non-phosphorylated mutant N gene was constructed by mutating all serine residues to alanine. This recombinant N protein was identified to be unphosphorylated, confirming that serine residues truly function as core amino acids responsible for N protein phosphorylation. The PRRSV N protein has been shown to possess the biological features of nuclear localization and N-N homodimerization which individually play critical roles in virus infection. In the present study, therefore, it was attempted to investigate whether these two properties of the N protein are modulated by its phosphorylation status. However, experimental results showed that the non-phosphorylated N protein was still present in the nucleus and nucleolus, and was able to associate with itself by non-covalent interactions. Taken together, the data suggest phosphorylation-independent regulation of N protein nuclear transport or oligomerization, thereby implying the potential involvement of phosphorylation in regulating the activities of the N protein at other levels including RNA-binding capacity.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.9-15
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• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Applied Biological Chemistry
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• v.34 no.2
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• pp.86-93
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• 1991

cis-Diamminedichloroplatinum(II)(CDDP), an antitumor drug, did not generate crosslink between bluetongue virus (BTV) capsid protein at moderate concentration. Cesium chloride density gradient centrifugation study revealed that protein-RNA crosslink was not detectable in CDDP treated BTV. CDDP treated BTV ds RNA showed remarkable change in the migration pattern in polyacrylamide gel electrophoresis. These results suggest that the reduction of BTV core associated transcriptase activity is most likely by the CDDP adduction to the genomic ds RNA rather than by the protein-RNA crosslink and/or protein-protein cross-link.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.9-17
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• 2008

Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.823-826
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• 2000

Burr formed in drilling are classified into three types. no burr, burrs with cap, teared burr. To control burr size in drilling. the second type burrs with cap are to be formed because it is small and uniform. It is necessary to understand the mechanism of cap formation to derive the burr formation into second type burr with cap. In several materials, second type burrs are formed in drilling by changing cutting conditions. It is observed that cap is formed as a result of the plastic deformation along the outside of exit hole. According to the tension behavior of the material in concentrated region between hole and drill outside edge, the geometry of burr with cap is determined.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.10
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• pp.200-207
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• 2001

Burrs farmed in drilling are classified into three types, no burr, burrs with cap, teared burr. To control burr size in drilling, the second type burrs with cap are to be formed because it is small and uniform. It is necessary to understand the mechanism of cap formation to derive the burr formation into second type burr with cap. In several materials. second type burrs are formed in drilling by changing cutting conditions. It is observed that cap is formed as a result of the plastic deformation along the outside of exit hope. According to the tension behavior of the material in concentrated region between hole and drill outside edge, the geometry of burr with cap is determined. Simplified 2D FEM analysis shows good prediction for burr formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.177-177
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• 2007

ZnO는 3.36eV의 넓은 밴드캡을 가지는 II-IV족 반도체로써 태양전지, LED와 같은 광학적 소자로 이용이 기대가 되는 물질이다. 더욱이, 상온에서의 60meV에 해당하는 큰 엑시톤 에너지와 밴드캡 에지니어링이 가능하다는 장점 때문에 광학적 소자로 널리 이용되고 있는 GaN을 대체할 수 있는 물질로 주목을 받고 있다. 하지만, p-type ZnO는 형성이 어렵고 낮은 이동도와 케리어 농도의 특성을 보이고, 대기 중에 장시간 노출할 경우 n-type ZnO의 특성으로 돌아가는 불안정성을 보이고 있다. 최근에 몇몇의 연구자들에 의해 V족의 원소인 P(phosphorous), N(nitrogen), As(arsenic))를 도핑하여 p-type ZnO의 형성에 대한 논문이 발표되고 있다. 또한, V족 원소 중에 P는 p-type ZnO 형성에 효과적인 도핑 물질로 보고되 고 있다. 본 연구는 마그네트론 스퍼터링을 이용하여 다양한 온도에서 성장된 P도핑 ZnO 박막의 특성에 대해 연구하였다. P도핑된 ZnO 박막은 사파이어 기판에 buffer층을 사용한 Insulator 특성의 ZnO박막위에 400, 500, 600, $700^{\circ}C$에서 성장되 었다. 박막의 특성 분석에는 325nm의 파장을 가지는 He-Cd의 레이져 광원을 사용하여 10K의 저온 PL과 0.5T의 자기장을 사용한 van der Pauw configuration에 의한 Hall effect측정, 그리고 결정성 분석에는 XRD와 TEM을 이용하였다. 상온 Hall-effect 측정 결과, $400{\sim}600^{\circ}C$ 에서 성장된 박막은 n-type의 특성을 보였고, $700^{\circ}C$에서 성장된 Phosphorous 도핑 ZnO박막은 $1.19{\times}10^{17}$의 캐리어 농도를 가지는 p-type의 특성을 보였다. 그리고 XRD분석과 TEM분석을 통하여 박막의 성장온도가 증가 할수록 P도핑된 ZnO박막의 결정성이 향상되는 것을 알 수 있었다. 또한 10K의 저온 PL분석을 통해 p도핑에 의한 액셉터에 관련된 피크들을 관찰할 수 있었다.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.