• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.880-886
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• 2007

We have proposed a new "hybrid" envelope elimination and restoration(EER) transmitter architecture using an efficiency optimized power amplifier(PA) and modified bias modulator. The efficiency of the PA at the average drain voltage is very important for the overall transmitter efficiency because the PA operates mostly at the average power region of the modulation signal. Accordingly, the efficiency of the PA has been optimized at the region. Besides, the bias modulator has been accompanied with the emitter follower for the minimization of memory effect. A saturation amplifier, class $F^{-1}$ is built using a 5-W PEP LDMOSFET for forward-link single-carrier wideband code-division multiple-access(WCDMA) at 1-GHz. For the interlock experiment, the bias modulator has been built with the efficiency of 64.16% and peak output voltage of 31.8 V. The transmitter with the proposed PA and bias modulator has been achieved an efficiency of 44.19%, an improvement of 8.11%. Besides, the output power is enhanced to 32.33 dBm due to the class F operation and the PAE is 38.28% with ACLRs of -35.9 dBc at 5-MHz offset. These results show that the proposed architecture is a very good candidate for the linear and efficient high power transmitter.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.310-310
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• 2014

ZnO박막은 넓은 밴드갭 (3.37 eV), 높은 여기 결합 에너지 (60 meV)를 가지는 육방정계 우르자이트(hexagonal wurtzite) 결정구조를 가지는 II-VI족 화합물 반도체로, 가시광선 영역에서의 높은 광학적 투과도 특성과 자외선 파장에서 발광이 가능한 장점을 가진다. 최근, ZnO박막 성장 기술이 상당히 발전하였지만, 아직까지도 p-형 ZnO박막 성장 기술은 충분히 발전하지 못하여 ZnO의 동종접합 LED는 아직 상용화되지 않고 있는 실정이다. 따라서, 많은 연구 그룹에서 p-GaN, p-SiC, p-diamond, p-Si 등과 같은 p-type 물질 위에 n-type ZnO를 성장시킨 이종접합 다이오드가 연구되고 있다. 특히, p-GaN의 경우 ZnO와의 격자 불일치 정도가 1.8 % 정도로 작다는 장점이 있어 많은 연구가 이루어 지고 있다. 일반적으로 c-축을 기반으로 한 극성ZnO 발광다이오드에서는 자발 분극과 압전 분극 현상에 의해 밴드 휨 현상이 발생하고, 이로 인해 전자와 정공의 공간적 분리가 발생하게 되어 발광 재결합 효율이 제한되고 있다는 문제가 발생한다. 따라서, 본 연구에서는 극성 (0001) 및 비극성 (10-10) n-ZnO/p-GaN 발광다이오드의 성장 및 발광 소자의 전기 및 광학적 특성에 대한 비교 연구를 진행하였다. 금속유기 화학증착법을 이용하여 c-면과 m-면 위에 각각 극성 (0001) 및 반극성 (11-22) GaN박막을 $2.0{\mu}m$ 성장시킨 후 Mg 도핑을 한 p-GaN을 $0.4{\mu}m$ 성장시켜 각각 극성 (0001) 및 반극성 (11-22) p-GaN템플릿을 준비하였다. 이후, N2분위기 $700^{\circ}C$에서 3분동안 열처리를 통하여 Mg 도펀트를 활성화시킨 후 원자층 증착법을 이용하여 동시에 극성 및 반극성 p-GaN의 위에 n-ZnO를 $0.11{\mu}m$ 성장시켜 이종접합구조의 발광소자를 형성하였다. 이때, 극성 (0001) p-GaN 위에는 극성의 n-ZnO 박막이 성장되는 반면, 반극성 (11-22) p-GaN 위에는 비극성 (10-10) n-ZnO 박막이 성장됨을 HR-XRD로 확인하였다. 극성 (0001) n-ZnO/p-GaN이종접합 발광다이오드의 전계 발광 스펙트럼에서는 430 nm 와 550 nm의 두 피크가 동시에 관찰되었다. 430 nm 대역의 파장은 p-GaN의 깊은 준위에서 발광하는 것으로 판단되며, 550 nm 피크 영역은 ZnO의 깊은 준위에서 발광되는 것으로 판단된다. 특히, 10 mA 이하의 저전류 주입시 550 nm의 피크는 430 nm 영역보다 더 큰 발광세기를 나타내고 있다. 하지만, 10 mA 이상의 전류주입 하에서는 550 nm의 영역보다 430 nm의 발광세기가 더욱 증가하는 것을 확인할 수 있었다. 이것은 ZnO의 밴드갭이 3.37 eV로 GaN의 밴드갭인 3.4 eV다 작기 때문에 우선적으로 ZnO의 깊은 준위에서 발광하는 550 nm가 더욱 우세하지만, 지속적으로 전류주입 증가에 따른 캐리어 증가시 n-ZnO에서 p-GaN로 전자가 넘어가며 p-GaN의 깊은 준위인 430 nm에서의 피크가 우세해지는 것으로 판단된다. 반면에, 비극성 (10-10) n-ZnO/반극성 (11-22) p-GaN 구조의 이종접합 발광다이오드로 전계 발광 스펙트럼에서는 극성 (0001) n-ZnO/p-GaN에 비하여 매우 낮은 전계 발광 세기를 나타내고 있다. 이는, 극성 n-ZnO/p-GaN에 비하여 비극성 n-ZnO/반극성 p-GaN의 결정성이 상대적으로 낮기 때문으로 판단된다. 또한, 20 mA 영역에서도 510 nm의 깊은 준위와 430 nm의 발광이 관찰되었다. 동일한 20 mA하에서 두 피크의 발광세기를 비교하면 430 nm의 영역은 극성 n-ZnO/p-GaN에 비하여 매우 낮은 값을 나타내고 있다. 이는 반극성 (11-22) p-GaN의 경우 극성 (0001) p-GaN에 비하여 우수한 p-형 특성에 기인한 것으로 판단된다.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• Journal of Hospice and Palliative Care
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• v.12 no.3
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• pp.139-146
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• 2009

This study was designed to examine the effect of aroma massage therapy on lower extremity edema of terminal cancer patients. Methods: A total of thirty-six terminal cancer patients with lower extremity edema were divided into two groups: the aroma massage group received massage with blending oil which was applied from toes to 10 cm above the knee of the subject for 15 to 20 minutes in each turn, while the control group received sham aroma massage (applied with carrier oil only). The circumferences of the fore-foot, ankle and calf were measured before massage and 30 minutes, 2 hours, and 12 hours after massage. The blood pressure, pulse and body temperature were also measured to find the change of subject's physiologic conditions. Results: There were no significant differences in blood pressure, heart rate, body temperature and lower extremity circumferences between two groups. However, edema at each site was slightly improved in the treatment group after the aroma massage therapy, compared to baseline data (P<0.05). In addition, the reduction of lower extremity circumference was maximal at 2 hours in foot, 30 min in right ankle and 12 hours in right calf after aroma massage therapy (P<0.05). Conclusion: Our results suggest that aroma massage therapy is not effective on the lower extremity edema of terminal cancer patients.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.19-24
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• 2020

In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electrical conductivity of the films within the experimental conditions explored in this work. However, it was observed the air ambient led to severe degradation of the film's electrical conductivity while N2-annealed samples exhibited improvement in both the carrier concentration and Hall mobility measured at room temperature. Interestingly, the x-ray photoemission spectroscopy (XPS) revealed that both annealing conditions resulted in higher concentration of oxygen vacancy (VO). Although it was a slight increase for the air-annealed sample, high resistivity of the film strongly suggests that VO cannot be a shallow donor in β-Ga2O3. Therefore, the enhancement of the electrical conductivity of N2-annealed samples must be originated from something other than VO. One possibility is the activation of Si. The XPS analysis of N2-annealed samples showed increasing relative peak area of Si 2p associated with SiOx with increasing annealing temperature from 800 to 1,200℃. However, it was unclear whether or not this SiOx was responsible for the improvement as the electrical conductivity quickly degraded above 1,000℃ even under N2 ambient. Furthermore, XPS suggested the concentration of Si actually increased near the surface as opposed to the shift of the binding energy of Si from its initial chemical state to SiOx state. This study illustrates the electrical changes induced by a post-growth thermal annealing process can be utilized to probe the chemical and electrical states of vacancies and dopants for better understanding of the electrical property of Si-doped β-Ga2O3.

• Journal of the Korean Applied Science and Technology
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• v.40 no.1
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• pp.13-23
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• 2023

This study is an experimental study on the single group pre-post test design for the effects of the aroma inhalation method with roll-on on stress, pain, depression and blood pressure of the elderly. 33 elderly people who met the selection criteria participated among the elderly using the senior citizen clubs located in S city, Gyeonggi-do. The data collection period was from November 14, 2022 to December 19, 2022. A questionnaire consisting of stress, pain, depression, and blood pressure was measured before and after the aroma roll-on inhalation intervention. The components of aroma essential oil included Marjoram, Geranium, Peppermint and Orange sweet that were diluted in Jojoba oil which was the carrier oil. The aroma inhalation method with roll-on was carried out 3 times day for 4 weeks. In the result of this study, the aroma inhalation method with roll-on were statistically significant differences in stress(t=2.63, p=.013), pain(t=2.46, p=.019), and systolic blood pressure(t=3.01, p=.005) of the participants. Therefore, aroma roll-on therapy is expected to be available as a useful nursing intervention method for reducing stress, relieving pain, and managing blood pressure in the elderly using the senior citizen clubs.