• Korean Journal of Optics and Photonics
• /
• v.11 no.4
• /
• pp.279-288
• /
• 2000

The variations of output energy due to tilt output coupler for different types of pulsed Nd:YAG laser resonators were compared by measuring FWHM (full width at half maximum) which means the width of angle displacement where maximum output energy decreases to half value. We proposed a new configuration of pulsed solid-state laser resonator which had high FWHM for tilting of output coupler and which was little sensitive for tilting of rear optics. We proved that our laser resonator had high alignment stability using ABeD ray matrix method because the ray matrix of such a resonator corresponded to unit matrix. atrix.

• Korean Journal of Optics and Photonics
• /
• v.8 no.5
• /
• pp.357-361
• /
• 1997

We report the operation of a self-starting phase conjugate laser(PCL) oscillator which compensates intracavity phase distortion. The self-starting PCL in the population inverted Nd:YAG gain media produced an output energy of 200 mJ in a 20 ns single-longitudinal-mode pulse at 10Hz. And it showed well-defined Gaussian spatial profile.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.156-156
• /
• 2011

InAs와 InGaAs 양자점(Quantum Dot: QD)을 이용한 광대역 초발광 다이오드(Superluminescent Diode: SLD) 시료가 분자선증착법(Molecular Beam Epitaxy)을 이용하여 성장되었다. 광대역 파장대 출력을 얻기 위해 각기 다른 종류의 양자점과 다른 크기의 양자점을 적층하였다. 시료는 광발광(Photoluminescence: PL) 측정과 전계발광(Electroluminescence: EL) 측정을 통해 분석 되었으며, PL 측정결과 1222 nm와 1321 nm 파장에서 최대치(peak)를 나타냈으며 EL 측정결과 900mA 전류 주입시 131 nm의 반치폭(Full Width at Half Maximum: FWHM)을 얻었다.

• Electrical & Electronic Materials
• /
• v.8 no.6
• /
• pp.693-698
• /
• 1995

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.117-122
• /
• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.14 no.5
• /
• pp.438-443
• /
• 2021

This paper uses a multiplex deposition sputter system and aims to improve transmittance and reduce production costs by depositing a CdS thin film on an ITO glass substrate. When manufacturing CdS thin films, we wanted to find excellent conditions when manufacturing solar cells by changing heat treatment time. It was observed that thickness and sheet resistance were not significantly different depending on heat treatment time changes. The specific resistance was measured from a minimum of 6.68 to a maximum of 6.98. When the heat treatment time was more than 20 minutes, the transmittance was measured to be more than 75%. When the heat treatment time was 10 minutes, the bandgap was 3.665 eV and more than 20 minutes was 3.713 eV, which was measured as the same result. The XRD analysis showed that the structure of CdS was hexagonal and only CdS thin films were deposited without any other impurities. The result of calculating the FWHM was a maximum of 0.142 when the heat treatment time was 20 minutes, and a minimum of 0.133 when the heat treatment time was 40 minutes, so there was no significant difference in the FWHM when the heat treatment time was changed. The particle size was measured at 11.65 Å when the heat treatment time was 40 minutes, and at 10.93 Å when the heat treatment time was 20 minutes.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.406-410
• /
• 2000

Using the hot-wall epitaxy method, we grew a $Hg_{1-x}Cd_xTe$ (MCT) thin film in-situ after growing (111) CdTe of 9 $mu \textrm{m}$ as a buffer layer. The value of FWHM of double crystal x-ray diffraction rocking curve was 125 arcsec and the surface morphology was clean with a small roughness of 10 nm. From measuring the photocurrent of the grown MCT thin film, the maximum peak wavelength and the cut-off wavelength were 1.1050 $\mu\textrm{m}$ (1.1220 eV) and 1.2632 $\mu\textrm{m}$ (0.9815 eV), respectively. This peak wavelength corresponds to the peak of the band gap due to the intrinsic transition of the photoconductor. Therefore, the MCT thin film could be used as the photoconducting detector sensing a near-IR wavelength band from 1.0 to 1.6 $\mu\textrm{m}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.330-331
• /
• 2011

희토류 이온이 첨가된 형광체는 조명, 정보 디스플레이, 태양 에너지 변환 소자에 응용 가능하기 때문에 상당한 주목을 받고 있다. 특히, 결정 입자의 형상과 크기는 산업체 응용에 있어서 중요한 변수 중의 하나이다. 구형의 형광체 입자는 형광층의 광학 및 기하학적 구조를 최적화 시킬 수 있고, 결정 입자의 크기는 양질의 코팅을 위해 필요한 결정 입자의 양에 영향을 미친다. 본 연구에서는, $YVO_4$ 모체 결정에 Eu 이온의 농도를 선택적으로 주입하여 발광 효율이 높은 적색 형광체를 합성하고자 한다. 형광체 분말 시료는 활성체인 Eu의 함량을 0.00, 0.05, 0.10, 0.15, 0.20 mol로 변화시키면서 고상 반응법을 사용하여 합성하였다. 볼밀링 작업을 수행한 후에, 60$^{\circ}C$에서 20시간 건조하였고, 잘게 갈아서 체로 걸러낸 다음에 세라믹 도가니에 넣고 전기로에서 서서히 온도를 승온시켜 500$^{\circ}C$에서 10시간 동안 하소를 실시한 후에 1,100$^{\circ}C$에서 5시간 동안 소결하였다. Eu 이온의 함량비를 변화시켜 합성한 $YVO_4$ : Eu 형광체 분말 시료의 발광 세기의 변화, 결정 구조와 표면 형상을 각각 PL과 PLE, XRD, FE-SEM 장치를 사용하여 측정한 결과들을 종합해 볼 때, Eu 이온의 비가 0.15 mol일때 발광 세기가 최대값을 나타냄을 알 수 있었으며, 더욱 Eu의 함량을 증가시키자 농도 억제 현상에 의하여 발광 세기는 급격히 감소함을 보였다. SEM으로 촬영한 결정 입자의 형상의 경우에, Eu 이온의 함량비가 증가함에 따라 결정 입자들이 더욱 조밀하게 구형에 가까운 형상을 나타냄을 관측할 수 있었다(Fig. 1). 형광체 분말의 형광 스펙트럼의 경우에, 619 nm에 주 피크를 갖는 적색 형광 스펙트럼들이 관측되었으며, Eu 이온의 함량비에 따라 형광 세기는 상당한 의존성을 나타내었다(Fig. 2). Eu 함량에 따른 결정입자의 크기, 형광 세기와 회절 피크의 반치폭 사이의 상관 관계를 제시하고자 한다.

• The Journal of Korean Society for Radiation Therapy
• /
• v.20 no.2
• /
• pp.109-113
• /
• 2008

Purpose: To evaluate the detector dependency in the various collimator size for Stereotactic Radiosugery (SRS). Materials and Methods: This study was performed with 6 MV photon beam (Varian 21EX, Varian, US) and the measurement detectors are used by ion chamber CC01, CC13 (Wellhofer, Germany) and stereotactic diode detector (SFD, Wellhofer, Germany). SRS collimator size was used by ${\varphi}$5, 10, 20, 30 mm (Brain Lab, Germany). Percentage depth dose (PDD) was measured at SSD 100 cm and field size 10×10 cm from individual detectors. Ouput factor was measured by using same setup of PDD and with maximum dose depth. Data was normalized at field size $10{\times}10\;cm$. Beam profile was measured at SSD 100 cm in SRS collimator ${\varphi}$10, 30 mm and field $10{\times}10\;cm$ and a comparison of FWHM (full width half maximum), penumbra width (20~80%). Results: The CC13 detector was overestimated 16% than other detectors from the PDD in the 5 mm collimator. Output factors were underestimated CC01 28%, CC13 72% in the 5 mm collimator and CC01 9.6%, CC13 25% in the 10 mm collimator than the SFD. Maximum difference was 3% at the FWHM of the dose profile in the 10 mm collimator and difference of the 30 mm collimator was 0% at the FWHM. Penumbra width was increased CC01 122%, CC13 194% in the 10 mm collimator and CC01 68%, CC13 185% in the 30 mm collimator than the SFD. Conclusion: It is very important for accurate dosimetry to select a detector in small field. The SFD was considered with the most accurate dosimeter for small collimator dosimetry in this study.

• Korean Journal of Optics and Photonics
• /
• v.13 no.4
• /
• pp.347-355
• /
• 2002

We have constructed a high efficiency and broad tunable cw Ti:sapphire laser with a four-mirror symmetric Z-type laser cavity to increase the laser usability. From theoretical analyses and experimental data for a symmetric Z-type laser cavity containing a Kerr medium, the cavity mode size and the Kerr-lens mode-locking (KLM) strength for KLM lasers can be confirmed as function of the position in the cavity, the intracavity laser power, and the stability parameter. As a result, the slope efficiency and the maximum average output power of cw Ti:sapphire laser at 5 W pumping power of Ar-ion laser were 31.3% and 1420 ㎽ respectively. The tunablility was ranged from 730 ㎚ to 908 ㎚ with average output power above 700 ㎽. We obtained the KLM operation easily by self-aperturing effect in the Kerr medium and the slope efficiency and the maximum average output power of KLM Ti:sapphire laser was 16% and 550 ㎽ respectively. The spectral bandwidth was 33 ㎚ at the center wavelength of 807 ㎚ and the pulse width was 27 fs with a repetition rate of 82 ㎒.