• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.1
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• pp.19-26
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• 1987

The broadband microwave amplifier in the 3~4GHz frequency range has been designed by using potentially unstable GaAs FET. Input matching network is designed by 14dB available power gain circles which are in the stable region. In order to obtain maximu, transducer power gain, output matching network which is in the stable region can be designed using Fano's bandpass matching network. The measured values of transducer power gain, $S_11$and $S_22$ show close agreements with the theoretical valuse.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.5
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• pp.97-102
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• 2012

In this paper, each electrical length and harmonics of the multi-stage SIR are calculated by using the input impedance for the variable application of SIR in the microwave systems. The size reduced ratio of the SIR is slightly reduced as increasing of the number of stage. The impedance ratio between lower and higher impedance of the SIR has the dominant effect on the size reduced ratio and harmonic characteristics. Also the equivalent impedance of the SIR is a geometric mean between lower and higher impedance and the quality factor of the SIR is similar to the half-wavelength resonator's.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.91-97
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• 1998

The modulation performance of 10 Gbps electro-absorption InGaAsP/InGaAsP strain compensated MQW (Multiple Quantum Well) modulator module depends on the modulator as well as the package parasitics. The high frequency package parasitics resulting from various structural discontinuities, limit the modulation bandwidth and increase the chirp-parameter. Therefore, we propose the double bondwires embedded in dielectric materials to minimize the bondwire parasitics. Using the proposed structure with 50 $\Omega$ terminating resistor, the modulation bandwidth is greatly increased by 125 % than the bare chip and the chirp-parameter is also reduced. This technique can be used in optimizing the package of high speed external modulators.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.9B
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• pp.1683-1689
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• 1999

We have implemented Frequency bandwidth expander with frequency upconverting by VCO drift canceller and comb generator. Te output of the low frequency synthesizer which the output frequency is 220~280MHz(Resolution : 5MHz) is expanded to 1660~2140MHz by this system. The phase noise of this system only depends on the phase noise of comb generator and low frequency synthesizer. The phase noise of VCO don’t influence at the frequency expander because the drift of VCO cancel out. When we control the output of VCO, the output frequency of this system is varied by 60MHz x N as filter banker. The switching time and the spurious of the frequency expander is below 3usec, -55dBc respectively. This system easily expands bandwidth additively by expanding the output bandwidth of the VCO. We can apply the frequency expander to very wide band microwave synthesizer which has fast switching time.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.214-218
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• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.5
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• pp.123-129
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• 2023

MIMO antenna is a field in which various researches have been actively conducted for a long time, and its design concept is universally well known. However, Unlike conventional MIMO antennas, MIMO antennas for autonomous driving radars, which have recently been attracting attention, are designed in W-band which is a millimeter wave band, and must also meet novel design conditions to satisfy the performance of autonomous driving radars. Therefore, a novel and different approach is required for the design and beam pattern verification of the MIMO antenna for autonomous driving radar. In this paper, a MIMO antenna is designed and the design process to satisfy the conditions of a W-band autonomous driving radar is introduced, and proposes a beam pattern verification method for a W-band MIMO antenna mounted on an autonomous driving radar system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.1
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• pp.720-725
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• 2015

This paper describes the design of a wideband cascode amplifier using a feedback network and microwave small-signal transistors. The adopted cascode structure enables the miller effect to be lessened, cutoff frequency to increase, and reduction of gain in the mid-band to be mitigated. In addition, a feedback network is added to the cascode structure to improve the input matching and ripple performances over the wide operating band. The designed cascode amplifier contains a feedback network for small size and broadband amplification, whereas balanced amplifiers and distributed amplifiers have been used widely. The measurement shows $8.5dB{\pm}1.5dB$ of gain over 1000-2000MHz. The fabricated cascode amplifier has more than 8dB of gain over a 1000MHz bandwidth with a good flatness. The measured performances agree with the predicted ones even a minor shift in operating frequency is observed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.989-994
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• 2005

A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.35-42
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• 2021

The research of amplifier have been actively conducted to replace the Traveling Wave Tube Amplifier (TWTA) in the mmWave. For Solid State Power Amplifiers (SSPA), which combine semiconductor-type devices to obtain high output, Low-loss, high-efficiency combination techniques are required to meet the required output as the output of a single relatively low device is relatively low. In this paper, we design and produce an 8-way waveguide combiner and a reflective loss of more than 20dB and a binding efficiency of 85% or more were identified. Field analysis calculates the critical power inside the combiner. It secured stable Power Ratings and built-in coupler for power monitoring to achieve miniaturization and light weight.