• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1311-1316
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• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.7
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• pp.1617-1622
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• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.992-997
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• 2016

This paper analyzes the deviation of tunneling current for the ratio of top and bottom gate oxide thickness of short channel asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current significantly increases if channel length reduces to 5 nm. This short channel effect occurs for asymmetric DGMOSFET having different top and bottom gate oxide structure. The ratio of tunneling current in off current with parameters of channel length and thickness, doping concentration, and top/bottom gate voltages is calculated in this study, and the influence of tunneling current to occur in short channel is investigated. The analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for the ratio of top and bottom gate oxide thickness in short channel asymmetric DGMOSFET, specially according to channel length, channel thickness, doping concentration, and top/bottom gate voltages.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.163-168
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• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• Journal of the Society of Disaster Information
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• v.20 no.1
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• pp.1-12
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• 2024

Purpose: The objective of this study was to improve the tunnel maintenance and monitoring technology by establishing the maintenance, management, and monitoring standards for shield and TBM tunnels, which had been applied more in recent years. Method: This study comprehensively analyzed and compared the data and model simulations of Seoul Subway Lines 7 and 9 and Bundang Line, shield and TBM tunnels in South Korea, tunnels in France and Japan, and Channel Tunnel in the UK. Result: This study set maintenance and monitoring standards when there was no design estimate based on numerical analyses such as section design and section analysis regarding the maintenance and monitoring section of shield and TBM tunnels. Conclusion: It is necessary to determine safety by comprehensively considering not only each monitoring item but also the changing trend and correlation of all items and compensation of the tunnel.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.166-167
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• 2002

광자 크리스탈은 빛의 진행을 제어할 수 있는 잠재적인 능력과 Wavelength Division Multiplexing 통신 시스템에서 광소자의 구현 가능성 때문에 활발히 연구가 진행 중이다. (1-3) 본 논문에서는 광자 크리스탈의 채널 드롭 터널링 현상을 이용하여 1x4 Demultiplexer의 구현 가능성을 고찰하였다. 광자 크리스탈을 이용해서 공진 시스템을 구성하였고, 중앙에 위치한 2개의 작은 디펙트의 크기를 조절하여 채널 드롭 현상을 관찰하였다. (중략)

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.5A
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• pp.397-401
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• 2005

A different alternative method for simulating bit error rate(BER) performance of Satellite Digital Multimedia Broadcasting(DMB) in tunnel environments is presented. The method based on a channel model obtained by ray-tracing is able to support BER estimation over the channel presents arbitrary statistics that are difficult to fit to an analytic expression. The BER performance for System E over the tunnel fading channel that obtained by ray-tracing is predicted by the monte-carlo method. It can be observed that the BER performance for a straight tunnel channel is better than that for a line-of-sight(LOS) area in curved tunnel. Also, the BER performance for LOS areas in a curved tunnel outperforms that for non-line-of-sight(NLOS) areas in a curved tunnel. The BER performances for straight, curved LOS and curved NLOS tunnel channels are better than that for a Rayleigh channel(K=0) and less than that for a Rician channel with K=3. Moreover, for BER=10-3, it can be seen that there is approximately a $1{\sim}1.5\;dB$ difference between those three types of tunnel channels and a Rayleigh channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.6
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• pp.1069-1074
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• 2017

Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.688-690
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• 2017

Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The SCE occurred in on-state transistor raises limitation of operation range of transistor. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.1003-1013
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• 2009

In the domestic environments, there are many tunnels since most of terrains have mountains. To ensure the quality of wireless network service in NLOS environment like tunnels which differ from indoor or outdoor wireless channels, researches on wave-propagation characteristics. through such channel are necessary. Especially, in such environment the ground repeater called Gap-Fillers are usually used for satellite mobile services. To make sure that mobile service using satellites in tunnels is available, the research about Gap Filling method is essential. This research is focus on the characterising the wave-propagation through tunnels, to find the appropriate frequency, HPBW of the Gap-Filler antennas, the number of Gap-Fillers, etc. In this paper, we present the effective Gap Filling method in tunnels for ISM band, based on analysis of ray tracing and measurement results.