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http://dx.doi.org/10.6109/jkiice.2017.21.6.1069

Relation of Breakdown Voltage and Channel Doping Concentration of Sub-10 nm Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.21, no.6, 2017 , pp. 1069-1074 More about this Journal
Abstract
Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.
Keywords
Breakdown Voltage; Double Gate Mosfet; Tunneling Current; Channel Doping;
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Times Cited By KSCI : 2  (Citation Analysis)
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