A Study on the Channeling Effect of Ultra Low Energy B, P and As Ion Implant to Form Ultra-Shallow Junction of Semiconductor Device (초미세 접합형성을 위한 극 저 에너지 B, P 및 As 이온주입시 채널링 현상에 관한연구)
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- Journal of the Korean Institute of Telematics and Electronics D
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- v.36D no.3
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- pp.27-33
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- 1999