• Title/Summary/Keyword: 준안정

Search Result 94, Processing Time 0.029 seconds

Oxidation Added Wet Cleaning Process for Synthetic Diamonds (합성 다이아몬드를 위한 산화제가 첨가된 세정공정)

  • Song, Jeongho;Lee, Jiheon;Song, Ohsung
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.14 no.8
    • /
    • pp.3597-3601
    • /
    • 2013
  • In this study, a wet cleaning process, P II, using aqua-regia and sulfuric acid mixture with oxidant agent ($K_2S_2O_8$, $P_2O_5$, $KMnO_4$, $H_2O_2$ etc) is proposed to remove the metastable phase of graphite such as graphene and DLC for high quality synthetic diamonds. The process employed the conventional acid cleaning process (P I) as well as P I+P II to remove the graphite related impurities from the 200um-diamond powders synthesized at 7GPa-$1500^{\circ}C$-5minutes. The degree of cleaning after P I and P I+P II has been observed by naked-eye, optical microscopy, micro-Raman spectroscopy, and TGA-DTA. After P I+P II, the color of diamond became more vividly yellow with enhanced saturation with naked eye and optical microscopy analysis. Moreover, the disappearance of diamond-like-carbon (DLC) peak ($1440cm^{-1}$) observed by Raman spectroscopy confirmed the decrease in amount of remaining impurities. TGA-DTA results showed that the graphite impurities first started to dissolve at $770.91^{\circ}C$ after PI process. However, the pyrolysis started at $892.18^{\circ}C$ after P I+P II process because of the dissolution of pure diamonds. This result proved the effective dissolution of the metastable phase of graphite. We expect that the proposed P II process may enhance the quality of diamonds through effective removal of surface impurities.

Thermally Induced Metastability in Boron-Doped Amorphous Silicon Thin Film Transistor (보론 도우핑된 비정질 실리콘 박막 트랜지스터의 열에 의한 준안정성 연구)

  • Lee, Yi-Sang;Chu, Hye-Yong;Jang, Jin
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.26 no.3
    • /
    • pp.130-136
    • /
    • 1989
  • Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

  • PDF

Characteristics of Low-power Microwave Induced Plasma Emission Spectrum and Detection of $CO_2$ (저출력 마이크로파 유도 플라스마 방출스펙트럼의 특성과 $CO_2$ 분석)

  • Noh, Seung Man;Park, Chang Joon;Kim, Young Sang
    • Journal of the Korean Chemical Society
    • /
    • v.40 no.4
    • /
    • pp.235-242
    • /
    • 1996
  • A surfatron-type microwave induced plasma (MIP) cavity has been constructed, which can be easily interfaced with a gas chromatograph. Various plasma gases such as He, Ar and N2 were used to generate the MIP and small amounts of CO2 gases were injected through the MIP to obtain characteristic spectrum of each plasma gas and to study feasibility of the MIP as a soft ionization source. Since He and Ar plasmas have high metastable state energy, it was not possible to detect sample gas in molecular state. With N2 plasma, however, a strong emission of molecular ions could be detected owing to its low metastable state energy.

  • PDF

아르곤4P준위 광방출 분석법(OES)을 이용한 플라즈마의 전자온도 및 준안정 밀도 측정

  • Lee, Yeong-Gwang;Lee, Min-Hyeong;Jeong, Jin-Uk
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
    • /
    • 2007.06a
    • /
    • pp.104-108
    • /
    • 2007
  • This paper reviews a simple model and spectroscopic method for extracting plasma electron temperature and argon metastable number density. The model is based on the availability of experimental relative emission intensities of only four argon lines that originate from 4p argon level. In this method, Maxwell-Boltzman distribution for EEDF is assumed and the calculation relies on the accuracy of the cross section. Therefore OES have to be compared with Langmuir probe to establish their practical validity.

  • PDF

Comparison on Recent Metastability and Ring-Oscillator TRNGs (최신 준안정성 및 발진기 기반 진 난수 발생기 비교)

  • Shin, Hwasoo;Yoo, Hoyoung
    • Journal of IKEEE
    • /
    • v.24 no.2
    • /
    • pp.543-549
    • /
    • 2020
  • As the importance of security increases in various fields, research on a random number generator (RNG) used for generating an encryption key, has been actively conducted. A high-quality RNG is essential to generate a high-performance encryption key, but the initial pseudo-random number generator (PRNG) has the possibility of predicting the encryption key from the outside even though a large amount of hardware resources are required to generate a sufficiently high-performance random number. Therefore, the demand of high-quality true random number generator (TRNG) generating random number through various noises is increasing. This paper examines and compares the representative TRNG methods based on metastable-based and ring-oscillator-based TRNGs. We compare the methods how the random sources are generated in each TRNG and evaluate its performances using NIST SP 800-22 tests.

Cu 함유량에 따른 Mo-Cu 박막의 특성 평가

  • Lee, Han-Chan;Mun, Gyeong-Il;Sin, Seung-Yong;Lee, Bung-Ju;Sin, Baek-Gyun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.259-259
    • /
    • 2012
  • Mo-Cu 합금은 열전도도, 전기전도도가 우수하고 합금조성에 따라 열팽창계수의 조절이 가능하여 반도체소재, 방열소재, 접점소재 등에 적용가능성이 높은 재료로 주목받고 있다. 또한 상태도 상에서 고용도가 전혀 없기 때문에 박막을 제작하였을 경우, 나노 복합체 형성이 용이하고 질소 분위기에서는 MoN-Cu로 상분리가 가능하여 하드상과 소프트상의 물성을 동시에 보유한 박막 제작이 가능하다. 또한 고온에서 산화반응에 의해 생기는 $MoO_3$, $CuO_3$와 같은 준안정상의 산화물들은 육방정계 구조(HCP)를 가지며 전단특성이 우수하여 자동차 저마찰 코팅재료로써 많은 연구가 진행되고 있다. 반면, Mo-Cu 는 상호간에 고상은 물론 액상에서도 고용도가 전혀 없기 때문에 일반적인 방법으로는 합금화 또는 복합화가 어렵다. 또한 Mo-Cu 박막을 제작할 경우 복수의 타겟을 이용해야 하기 때문에 성분조절과 구조적 제어가 불리하고 공정의 복잡화라는 단점을 가지고 있으며 추가적으로 다른 원소를 첨가하여 3원계, 4원계 이상의 박막을 형성하는 것에 한계가 있다. 따라서 본 연구에서는 위와 같은 문제점을 해결하기 위하여 상호간의 고용도가 없는 재료의 합금화가 용이한 기계적 합금화법(Mechanical Alloying)을 이용하여 Mo-Cu 합금분말을 제조하였고, 준안정상태의 구조의 유지가 가능한 방전 플라즈마 소결법(Spark Plasma Sintering)을 이용하여 합금타겟을 제작하였다. Mo-Cu 박막은 제작된 합금타겟을 사용하여 DC 스퍼터링 공정으로 제작하였다. Mo-Cu 박막의 공정조건으로는 타겟조성, 공정분위기, 가스 비율로 정하여 실험을 진행하였다. 제작된 박막은 자동차 코팅재료로써의 적용가능성을 보기 위해서 내열성, 내식성, 내마모성의 특성을 평가하였다.

  • PDF

Nondestructive Evaluation of Semi-Insulating GaAs Wafer Surface Properties Using SAW (SAW를 이용한 반절연 GaAs웨이퍼 표면 성질의 비파괴 측정)

  • Park, Nam-Chun;Park, Sun-Kyu;Lee, Kuhn-Il
    • The Journal of the Acoustical Society of Korea
    • /
    • v.10 no.3
    • /
    • pp.19-30
    • /
    • 1991
  • The surface properties such as energy gap, exciton, shallow trap level, deep trap level, type inversion with annealing and metastable state of $EL_2$ level of SI GaAs wafers and the conductivity distribution of 2 inch Cr doped GaAs wafer were investigated using nondestructive TAV(transverse acoustoelectric voltage) technique. The TAV is generated when SAW and semiconductor interact. We also have tried newly SAW oscillator technique to investigate the surface properties of semiconductor wafers and we have shown the validity of this technique.

  • PDF

Precipitation In Inconel 718 Alloy

  • Park, Hyung-Sup;Park, Ju
    • Nuclear Engineering and Technology
    • /
    • v.4 no.3
    • /
    • pp.203-213
    • /
    • 1972
  • The precipitation sequence of Inconel 718 alloy, aged at $760^{\circ}C$ for times up to 200 hr, has been studied by means of electron microscopy and X-ray diffraction methods. The dominant hardening phase was identified as the metastable, body-centered tetragonal $Ni_3Nb$ Phase in the morphology of platelets. The other phases identified in the aging sequence were (Nb, Ti)C and the stable acicular phase of orthorhombic $Ni_3Nb.$ The observations were made on the interaction of dislocations with the precipitates in the underaged condition. The shearing of the precipitates and the planar defects, e.g., stacking faults on i1101 planes of the intermetallic phase, were observed.

  • PDF