• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.154-158
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• 2008

Magnetite($Fe_3O_4$) is currently one of key materials for applications in magnetic storage and many bioinspired applications because bulk $Fe_3O_4$ has a high Curie temperature($Tc={\sim}850K$) and nearly full spin polarization at room temperature(RT). In this work, $Fe_3O_4$ nanoparticles with different sizes of 12 to 15 nm were prepared in a well-controlled manner by a nonhydrolytic synthetic method. Here, we report the significant intergrain magneto-resistance(MR) of ${\sim}2%$ at RT in $Fe_3O_4$ nanoparticle pellets. The tunneling conductance was also investigated based on the Brinkman model, as well. Our results show clearly that the surface or interfacial property of the particles plays a crucial role in the MR effect.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Korean Chemical Engineering Research
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• v.58 no.1
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• pp.64-68
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• 2020

In this study, metal copper clad laminate can be prepared using epoxy composite filled with thermally conductive fillers. In order to improve the thermal conductivity of epoxy composites, it is important factor to form conductive networks through appropriate packing of conductive fillers in epoxy composite matrix and to decrease the amount of thermally resistant junctions involving a epoxy composite matrix layer between adjacent filler units. This is because epoxy has a thermal conductivity of only 0.2-0.3W, so in order to maintain high thermal conductivity, thermally conductive fillers are connected to each other, so that the gap between particles can be reduced to reduce thermal resistance. The purpose of this study is to find way to achieve highly thermally conductive in the epoxy composite matrix filled with Al₂O₃ and Boron Nitride(BN) filler by filler loading and uniform dispersion. As a results, the use of Al₂O₃/BN hybrid filler in epoxy matrix was found to be effective in increasing thermal conductivity of epoxy composite matrix due to the enhanced connectivity offered by more continuous thermally conductive pathways and uniform dispersion without interfacial voids in epoxy composite matrix. In addition, surface treatmented s-BN improves the filler dispersion and adhesion between the filler and the epoxy matrix, which can significantly decrease the interfacial thermal resistance and increase the thermal conductivity of epoxy composite matrix.

• Journal of Adhesion and Interface
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• v.16 no.2
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• pp.69-75
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• 2015

Stone board for the rock bed was needed to reduce weight using thin thickness and reinforced materials. In this work, stone/wood board for rock bed was studied. Stone and wood were attached to reduce total weight of stone for rock bed. For reinforcing wood heat treatment method was used to change surface and mechanical properties. Mechanical strength of heat treated wood increased more than neat condition. The optimum heat treatment condition was set on $100^{\circ}C$ under tensile, flexural loads whereas surface energy was also obtained by contact angle measurement. Optimum adhesive condition was to get the maximum adhesion between stone and wood. Lap shear test was performed for stone/wood board with different adhesives such as amine type epoxy, polyurethane, chloro-rubber and vinyl chloride acetate type. Fracture surface of lap shear test was shown at wood fracture part on stone using amine type epoxy adhesive. It was found that for high adhesion between stone and wood the optimum adhesive was epoxy type for the rock bed.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1018-1024
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• 1999

The effects of operating temperature and stress on degradation of components in high temperature steam generator were investigated. Several 2.25CrlMo tubes which had operated over 20 years and an unused 9CrlMoVNb tube were tested. For the former samples, the amount of $\textrm{M}_{6}\textrm{C}$ carbide and its size are increased with the aging or operating time. The precipitation behavior of carbides ($\textrm{M}_{2}\textrm{O}$, $\textrm{M}_{6}\textrm{C}$) is changed with the operating temperature of the tubes. However, unused 9CrlMoVNb samples show a different carbide precipitation process due to high chromium, vanadium, and niobium contents. The amount of Cr-rich $\textrm{M}_{23}\textrm{C}_{6}$ carbide is significantly increased with aging time, but that of $\textrm{M}_{6}\textrm{C}$ type carbide is rarely changed with aging time at elevated temperatures.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.8
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• pp.36-44
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• 1999

This paper presents the design and fabrication of the duplexer for a Ka-band satellite transponder which is analyzed transmission characteristics by calculating the generalized scattering matrix using mode matching method. It is composed of 2 bandpass filters, coupled with H-plane T-junction having symmetrical inductive iris and E-plane metal insert structures. Compared with the size and weight of the Rx and Tx filter loaded with a transponders respectively, those of the duplexer can be effectively reduced. In a high power transmission, the variation of the filter characteristics is minimized by the scheme that irises are extended to the exterior of H-plane of the waveguide. This scheme needs no extra heat sinks for dissipating high power. The duplexer is designed to improve the simplification, durability and reliability by eliminating tuning screws, which have been used to compensate for the characteristics of fabricated filters. The bandpass filters of the duplexer show the insertion loss of less than 1.2 dB and the return loss in excess of 15 dB. The isolations of more than 65 dB have been achieved between Rx and Tx filter.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.350-355
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• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.219-224
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• 2001

Pd/Ge/Ti/Pt ohmic contact to n-type InCaAs was investigated. Minimum specific contact resistivity of $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $400^{\circ}C$ for 10 seconds. This was related to the formation of Pd-Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased slightly to $low-10^5\; \Omega\textrm{cm}^2$ in the case of longer annealing time. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.