• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.47.2-47.2
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.25-25
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• 2007

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.60-64
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• 2023

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO₂/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of high-performance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.43-49
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• 2002

Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1\times10^{-6}\Omega\textrm{cm}^2$ was achieved after annealing at $400^{\circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{\Omega}\textrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.4
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• pp.41-46
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• 2005

In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

• Korean Journal of Materials Research
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• v.7 no.9
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• pp.744-749
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• 1997

본 연구에서는 고주파 유도경화처리한 중탄소강의 회전접촉 피로거동을 0.44wt.%C강과 0.55wt.%C강을 사용하여 조사하였다. 회전접촉 피로시험은 Polymet RCF-1 시험기에서 탄성유체 윤활 조건으로 회전속도 8,000rpm, 최대 Hertz응력 492kg/m$m^2$을 가하면서 실시하였다. 미세한 lath마르텐사이트가 고주파 유도경화한 0.44wt.%C강과 0.55wt.%C강의 표면경화층에 형성되었고 소량의 페라이트가 일부 형성되었으며 0.44wt.%C강과 0.55wt.%C에 비해 비교적 큰 페라이트가 나타났다. 회전접촉 피로시험 후 표면경도가 거의 유지되는 표면경화층에서 회전접촉 피로시험전에 비해 경도가 상승하였다. 이 경도증가량의 최대치($\Delta$ Hv$_{max}$)와 피로수명과의 관계를 조사한 결과 0.55wt.%C강이 0.44wt.%C강에 비해 회전접촉 피로중에 일어나는 소변형에 대한 높은 저항성에 주로 기인하여 $\Delta$ Hv$_{max}$값은 낮게 나타나고 피로수명은 높게 나타났다.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• The Journal of Engineering Geology
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• v.20 no.1
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• pp.71-78
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• 2010

The Gagok mine is a contact metasomatic deposit, located at Gagok-myeon, Samcheok city and Cheoram-dong, Taebaek city, Gangwon province. The deposit lies within the limestone of Myobong and Pungchon formations, and exists the contact of intrusive granite porphyry. In order to determine the direction and extension of mineralization in the gallery and around the entrance of the ore deposit, we used the ground magnetic survey, the direct current (dc) resistivity survey using dipole-dipole array, and resistivity tomography survey. The ground magnetic survey did not detect the anomalous zone due to ore deposit, while the dc resistivity survey and resistivity tomography survey were successful in delineating the anomalous zone related to the extension of fault toward $N50^{\circ}W$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.49-49
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• 2010

본 논문은 진공챔버 내부에서 위성 표면의 온도를 제어하기 위한 할로겐램프를 이용한 적외선 발열장치의 개발에 관한 것으로, 인공위성이 우주궤도에서 받게 되는 복사에너지를 지상의 진공챔버 내에서 모사하기 위한 비접촉 적외선 발열장치에 관한 것이다. 진공챔버 내에서의 비접촉식 발열 방법 중, 진공환경에서의 오염을 발생시키지 않고, 발열 시간 및 냉각 시간이 가장 짧으며, 높은 열효율로 태양복사에너지를 가장 근사하게 모사할 수 있는 할로겐 램프를 이용한 발열 방법을 적용하였으며, 램프에서 방사되는 열에너지가 위성표면에 균일하게 분포될 수 있도록 위성 표면으로부터의 거리와 램프의 개수, 램프의 배열에 따른 에너지 분포 계산식을 도출하여 적용하였다. 공급 전압에 따른 램프의 저항특성을 파악하여, 원격으로 제어되는 150 VDC, 5 A의 직류전원공급기를 이용해 램프의 발열량을 조절하였으며, 발열량에 따른 위성 표면온도에 대한 해석을 수행하였다. 램프를 이용한 비접촉식 적외선 발열장치 개발을 통해 진공환경에서의 시험대상에 대한 효율적인 열에너지 부과방법 수립이 가능하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.379-385
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• 2017

In general, distribution board, panel board and motor control center can be installed over a wide area such as residence of group, building, schools, factories, ports, airports, water service and sewerage, substation and heavy industries that are used to supply converts the voltages extra high voltage into optimal voltage. There are electrical accidents due to rise of contact temperature, loose contact between busbar, deterioration of the contact resistance, over temperature of the busbars. In this paper, we designed and implemented the busbar joint and temperature measurement system, which can measure the joint resistance of busbar and loose connection between busbar using potentiometer and non-contact infrared sensor. The experimental results show that tightening the bolt and nut is fully engaged, resistance was decreased and maximum error range was 0.1mm. Also, the experimental result showed that the temperature at the contact area is increased from $27.3^{\circ}C$ to $69.3^{\circ}C$by the contact resistance.