• Composites Research
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• v.31 no.5
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• pp.238-245
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• 2018

The hydrodynamic ram (HRAM) phenomenon is one of the main types of ballistic battle damages of a military aircraft and has great importance to airframe survivability design. The HRAM effect occurs due to the interaction between the fluid and structure, and damage can be investigated by measuring the pressure of the fluid and the dynamic strains on the structure. In this paper, HRAM test of a composite T-Joint was performed using a ram simulator which can generate HRAM pressure. In addition, calibration tests of PVDF sensor were performed to determine the circuit capacitance and time constant of the measurement system. The failure behavior of the composite T-Joint due to HRAM pressure was examined using the strain gauges and a PVDF sensor which were attached to the surface of the composite T-Joint.

• Fire Science and Engineering
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• v.12 no.4
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• pp.3-12
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• 1998

The purpose of this study is to examine that the escape stair of high-rise buildings has to be designed as a left-handed stair(a stair being designed to turn left whicle we go down the ground floor) judging from fire-safety point of view. Most of Korean people are right-handers. In case of right-handers it was found that the occupant's escape speed using a left-handed stair is more convenient and fast than of a right-handed stair(a stair being designed to turn right while we go down the ground floor). But most of the escape stair of high-rise buildings in Korea was designed as a right-handed stair. The fire code therefore should be provided that the escape stair of high-rise buildings should be a left-handed stair.

• Journal of Korea Port Economic Association
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• v.33 no.4
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• pp.149-172
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• 2017

The Alibaba Company, founded by Mayun in 1997, captured no.1 position in the global electronic commerce industry in 2016. Logistics strategy and paying system of the firm have greatly contributed to its success. The study aims not only to investigate the entrepreneurship of Mayun to inspire Korean youths with it, but also to help Korean E Commerce industry with logistics strategy of the Alibaba Group. The study adopts the management history approach through a literature survey on life time story, management philosophy of Mayun. Results from a study on Ma Yun's entrepreneurship style showed certain key characteristics: a global mindset, marketing and advertising proficiency, patriotism, a challenging spirit, and creativity. Alibaba's logistics system has greatly contributed to the success of the company's E commerce trade so far. However, some things are left to be desired in the following areas: logistics management system, logistics contract unit price, competitiveness in warehousing compared to rival Chinese companies, and last mile delivery.

• Applied Chemistry for Engineering
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• v.31 no.4
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• pp.347-351
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• 2020

A material changes its physical and chemical properties through the interaction with radiation and also the neutrons, which is electronically neutral so that the penetration depth is relatively deeper than that of other radioactive way including alpha or beta ray. Therefore, the radiation damage by neutron irradiation has been intensively investigated for a long time with respect to the safety of nuclear power plants. The damage induced by neutron irradiation begins with the creation of point defects in atomic scale in the unit of picoseconds, and their progress pattern can be characterized by microstructural defects, such as dislocation loops and voids. Their morphological characteristics affect the properties of neutron-irradiated materials, therefore, it is very important to predict the microstructure at a given neutron irradiation condition. This paper briefly reviews the evolution of radiation damage induced by neutron irradiation and introduces a phase-field model that can be widely used in predicting the microstructure evolution of irradiated materials.

• Korean Journal of Plant Tissue Culture
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• v.22 no.3
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• pp.137-142
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• 1995

The acidic amino acids, aspartate and glutamate, which have a negative charge in physiological pH, possess the same transport system as neutral amino acids according to the competitive inhibitory studies with the neutral amino acids. The neutral amino acids cotransported with one H+ per molecule, and one K+efflux per one molecule for charge compensation (Cho,1994), but the acidic amino acids cotransported with two H+ per one molecule, and one K+ efflux per one molecule. The active transport system, which possess the same carrier but cotransported with the different number of H+, reported for the first time. from the results, we can see that one of cotransported H+ protonated at first carboxyl group of pK$_3$ of acidic amino acids, and then as a neutral form cotransported with H+ Therefore, Brassica possess two amino acids transport system for 20 amino acids, namely general - and basic amino acids transport system. The evolutionary meaning of amino acid carriers described with other reported plants.

• Journal of Soil and Groundwater Environment
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• v.7 no.3
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• pp.79-84
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• 2002

The optimal operation conditions, including voltage applied, reaction time, distance between electrodes. and electrode material. were investigated for the treatment of soil flushing effluent using electrofloatation. When 3V was applied for 1 hour, 88% oil-water separation efficiency was achieved. In case of 6V and above, 90% efficiencies were achieved. As reaction time and distance between electrodes were longer, separation efficiencies were higher and lower, respectively. Separation efficiencies for different anode materials were copper > aluminum > iron > titanium. It might result from the differences of their electrical conductivities.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.307-307
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• 2014

정보화 시대로 접어들면서 동일한 공간에 더 많은 정보를 저장할 수 있고, 보다 빠른 동작이 가능한 비휘발성 메모리 소자에 대한 요구가 증가하고 있다. 하지만, 최근 비휘발성 메모리 소자 관련 연구보고에 따르면, 메모리 소자의 소형화 및 직접화 측면에서, 전하 저장을 기반으로 하는 기존의 Floating-Gate(FG) Flash 메모리는 20 nm 이하 공정에서 한계가 예측 되고 있다. 따라서, 이러한 FG Flash 메모리의 한계를 해결하기 위해, 기존에 FET 기반의 FG Flash 구조와 같은 3 terminal이 아닌, Diode와 같은 2 terminal로 동작이 가능한 ReRAM, PRAM, STT-MRAM, PoRAM 등 저항변화를 기반으로 하는 다양한 종류의 차세대 메모리 소자가 연구되고 있다. 그 중, 저항 변화 메모리(ReRAM)는 CMOS 공정 호환성, 3D 직접도, 낮은 소비전력과 빠른 동작 속도 등의 우수한 동작 특성을 가져 차세대 비휘발성 메모리로 주목을 받고 있다. 또한, 상하부 전극의 2 terminal 만으로 소자 구동이 가능하기 때문에 Passive Crossbar-Array(CBA)로 적용하여 플래시 메모리를 대체할 수 있는 유력한 차세대 메모리 소자이다. 하지만, 이를 현실화하기 위해서는 Passive CBA 구조에서 발생할 수 있는 Read Disturb 현상, 즉 Word-Line과 Bit-Line을 통해 선택된 소자를 제외하고 주변의 다른 소자를 통해 흐르는 Sneak Leakage Current(SLC)를 차단하여 소자의 메모리 State를 정확히 sensing하기 위한 연구가 선행 되어야 한다. 따라서, 현재 이러한 이슈를 해결하기 위해서, 많은 연구 그룹에서 Diodes, Threshold Switches와 같은 ReRAM에 Selector 소자를 추가하는 방법, 또는 Self-Rectifying 특성 및 CRS 특성을 보이는 ReRAM 구조를 제안 하여 SLC를 차단하고자 하는 연구가 시도 되고 있지만, 아직까지 기초연구 단계로서 아이디어에 대한 가능성 정도만 보고되고 있는 현실 이다. 이에 본 논문은 Passive CBA구조에서 발생하는 SLC를 해결하기 위한 새로운 아이디어로써, 본 연구 그룹에서 선행 연구로 확보된 안정적인 저항변화 물질인 SiN를 정류 특성을 가지는 n-Si/Ti 기반의 Schottky Diode와 결합함으로써 기존의 CBA 메모리의 Read 동작에서 발생하는 SLC를 차단 할 수 있는 1SD-1R 구조의 메모리 구조를 제작 하였으며, 본 연구 결과 기존에 문제가 되었던 SLC를 차단 할 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.672-677
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• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.