• Title/Summary/Keyword: 전자 빔

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Characteristic Studies for Scan-Field Size and Visibility of Current Image in a Low Voltage Micro-Column (저 전압 초소형 전자칼럼의 주사면적 크기 및 전류영상 특성 연구)

  • Noriyuki, Ichimura;Kim, Young-Chul;Kim, Ho-Seob;Jang, Won-Kweon
    • Korean Journal of Optics and Photonics
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    • v.19 no.5
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    • pp.365-369
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    • 2008
  • The optimal condition for focusing an electron beam was investigated employing an electrostatic deflector in a low voltage micro-column. At fixed voltage of the electron emission tip, the focusing electron beam with source lens showed a larger scan field size and poorer visibility than those with an Einzel lens. Theoretical 3-D simulation indicated that a focusing electron beam with a source lens should have a larger spot size and deflection than those of a focusing Einzel lens.

Effect of Electron-Beam Irradiation on the Characteristics of Green Tea (Camellia sinensis L.) (전자빔 조사가 녹차 품질 특성에 미치는 영향)

  • Park, Ji-Hee;Lee, Jung-Min;Lee, Seung-Cheol
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.35 no.6
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    • pp.774-779
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    • 2006
  • The commercial green tea leaves were packaged with polyethylene film and irradiated by electron beam at doses of 0, 5, 10, 20, and 30 kGy. After irradiation, green teas were prepared by soaking the leaves in water (1 g/100 mL) at $75^{\circ}C$ for 10 min, and the physicochemical characteristics of green tea were determined. Electron beam irradiation decreased total phenol contents (TPC), total flavanol contents (TFC), ascorbic acid contents (AAC). Irradiation at dose of 20 kGy decreased TPC, TFC, and AAC from 223.46, 32.50, and 6.03 mg/g to 202.88, 31.16, and 5.57 mg/g, respectively, compared with non irradiated control. Electron beam irradiation also decreased catechins, caffeine, and nitrite scavenging activity of green tea. However, the changes of overall color and radical scavenging activity of irradiated green tea were negligible.

Study on the electron-beam treatment of i-ZnO thin films by RF magnetron sputtering (RF스퍼터를 이용한 I-ZnO박막의 electron-beam처리에 따른 특성 연구)

  • Kim, Dongjin;Kim, ChaeWoong;Jung, Seungcul;Kwon, Hyuk;Park, Insun;Kim, JinHyeok;Jeong, ChaeHwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.52.2-52.2
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    • 2011
  • 본 연구의 목적은 CIGS 태양전지의 두 가지 TCO층 중 AZO를 제외한 intrinsic ZnO의 전자빔 처리 영향에 대한 특성 분석을 하고자 함이다. 또한 추후 CIGS 태양전지를 제조하여 적용 시 전자빔 처리 전후의 특성이 어떻게 변하는지를 알아보기 위한 사전 실험이다. Intrinsic ZnO는 RF magnetron sputter 를 이용하여 약 100nm의 두께로 증착 하였다. 이때 공정 압력을 변수로 RF power는 80W로 설정 하였으며 Ar 분압은 10mtorr, 5mtorr, 1mtorr로 각각 달리 하며 증착 하였다. 이후 전자빔 처리를 위해 각각의 시편에 Argon flow 7sccm 상태에서 DC power 3kW, RF power 300W의 세기로 전자빔 처리를 실시 하였다. 전자빔 처리에 따른 전기적, 구조적 특성을 분석하기위해 Hall measurement와 SEM, XRD, UV-vis spectroscopy을 사용하였다. 먼저 Hall measurement 측정을 통한 전기적 분석 결과 비저항이 무한대에서 약 $40m{\Omega}{\cdot}cm$로 감소된 결과를 도출 할 수 있었으며, $2{\sim}3.4{\times}10^{18}/cm^3$ 이상의 carrier density 가 측정 되었다. UV-vis spectroscopy를 이용한 투과도 측정결과 모든 시편에서 Band gap이 감소하는 결과를 보였다. SEM, XRD를 이용한 분석결과 결정성 및 grain의 크기가 증가하는 결과를 얻을 수 있었다.

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Toxicity Assessment and Decomposition Characteristics of Triclosan in an E-beam Irradiation Process (전자빔 공정을 적용한 Triclosan의 제거특성 및 독성평가)

  • Chang, Taebum;Chang, Soonwoong;Lee, Sijin;Cho, Ilhyoung
    • Journal of the Korean GEO-environmental Society
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    • v.13 no.3
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    • pp.5-11
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    • 2012
  • The abjective of this study was to study the degradation behavior and acute toxicity assessment of Triclosan and acute toxicity under E-beam irradiation. The experiments were conducted to investigate the efficts of the degradation efficiency in the initial concentration of Triclosan and the irradiation capacity of E-beam and the degree of mineralization based on a change of scavenger gas. The biological toxicity test by using on green algae, Pseudokirchneriella Subcapitata was conducted to lead the reducing toxicity. Degradation efficiency of Triclosan was improved when E-beam irradiation intensity was higher. Additionally, the % of TOC removal in each Radical scavenger gas was increased as the follows orders: $N_2O$ > $O_2$ > $N_2$, The toxicity test showed that the toxicity effect after 4 days(96hrs) was decreased by increase of E-beam irradiation intensity.

Decomposition Characteristics of 1,4-dioxane in an E-beam Process and Toxicity Assessment (전자빔 공정을 적용한 1,4-dioxane의 제거특성 및 독성평가)

  • Hwang, Haeyoung;Chang, Soonwoong
    • Journal of the Korean GEO-environmental Society
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    • v.12 no.2
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    • pp.63-68
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    • 2011
  • The aim of this study was 1,4-dioxane's degradation efficiency and toxicity test applying E-beam. The experiments were shows that the degradation efficiency in the initial concentration of 1,4-dioxane and the irradiation capacity of E-beam and the degree of mineralization based on a change of scavenger gas. The biological toxicity test by using on of green algae, Pseudokirchneriella Subcapitata was conducted to lead the reducing toxicity. Degradation efficiency of 1,4-dioxane was improved when E-beam irradiation intensity was higher and the efficiency of TOC removal using Radical scavenger gas was increased by $N_2O$, $O_2$ and $N_2$ in order. In 4 days(96hrs), toxicity test results indicated that toxicity effect was decreased by increase of E-beam irradiation intensity.

High Efficiency Output Filter Design and Application for High Accuracy and High Stable Switching Type MPS (고정밀, 고안정 스위칭 전자석 전원장치를 위한 고효율 출력필터의 설계 및 응용)

  • Kim, S.C.;Ha, K.M.;Huang, J.Y.;Choi, J.H.
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.998-999
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    • 2006
  • 포항가속기 연구소의 선형가속기에는 22개의 솔레노이드 전자석, 16개의 사극전자석 그리고 전자빔의 궤도 조절을 위한 16개의 2극 전자석이 있다. 선형가속기의 빔을 저장링으로 공급해주는 빔 전송선에는 22개의 사극전자석과 13개의 빔 궤도 조절용 이극 전자석이 있다. 전자빔의 정밀 제어를 위하여 전자석의 전원장치는 출력전류 분해능은 16bit 이상이고 출력전류의 안정도는 최대출력에 대하여 ${\pm}50ppm$ 이하의 고정밀 고안정도가 요구된다. 이를 위하여 풀-브릿지 4상한 DC/DC 컨버터를 이용한 전자석전원장치를 개발 하였다. 전원장치의 입력전압 직류 40V이고 출력전류는 단방향 전원장치는 최대 50A/50V 이고 양방향 전원장치는 ${\pm}20A/20V$이다. 스위칭 주파수는 50 kHz이다. 전원장치의 출력부에 필터가 없으면 출력전류에는 스윗칭과 관련된 주파수 성분이 포함 되고 전자빔은 이들 주파수 성분에 대하여 영향을 받게 된다. 이러한 이유로 출력 필터의 cut-off 주파수는 5 kHz 이하가 되어야 한다. 본 논문에서는 고정밀 고안정 스윗칭 전자석전원장치를 위한 출력필터의 설계, 제작 그리고 이를 적용한 전자석전원장치에 대하여 논의 하고자 한다.

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A Study on the Electrom Beam Weldability of 9%Ni Steel (I) - Penetration and Electron Beam Characteristics - (9%Ni 강의 전자빔 용접성에 관한 연구 (I) - 전자빔 특성과 용입 -)

  • 김숙환;강정윤
    • Journal of Welding and Joining
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    • v.15 no.3
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    • pp.79-87
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    • 1997
  • This study was performed to evaluate basic characteristics of electron beam welding process for a 9% Ni steel plate. The principal welding process parameters, such as working distance, accelerating voltage, beam current and welding speed were investigated. The AB (Arata Beam) test method was also applied to characterize beam size and energy density of the electron beam welding process. The electron beam size was found to decrease with the increase of accelerating voltage and the decrease of working distance. So, in case of high voltage (150kV), spot size and energy density of electron beam were revealed to be 0.9mm and $6.5\times10^5W/\textrm{cm}^2$ respectively. The accelerating voltage among the welding parameters was found to be the most important factor governing the penetration depth. When the accelerating voltage of electron beam was low ($\leq$90kV), beam current and welding speed did not affect on the penetration depth significantly. However, in case of high voltage ($\geq$120kV), the depth of penetration increased very sensitively with the increase of beam current and the decrease of welding speed.

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Small ESPAR Antenna with 180 Degree Azimuth Beam Coverage (180도 방위 빔 커버리지 특성을 갖는 UNII대역 소형 전자 빔 조향 기생 배열 안테나)

  • Choi, Ik-Guen;Ju, Sang-Ho
    • Journal of Korea Society of Industrial Information Systems
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    • v.15 no.2
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    • pp.11-16
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    • 2010
  • In this papar, we have proposed a small electronically steerable parasitic array radiator with 180 degree azimuth beam coverage and high gain characteristics. The proposed antenna is composed of a uniplanar Yagi dipole as a feeding element and two dipoles as parasitic elements. The fabricated antenna is tested by electronically changing the reactance loaded on the parasitic dipoles and the results show that it has 5.2dB~6.7dB gain in $-90^{\circ}{\sim}90^{\circ}$wide azimuth range and -10dB return loss characteristics within 5.725GHz~5.825GHz UNII band.

Development of Electron-Beam Lithography Process Simulation Tool of the T-shaped Gate Formation for the Manufacturing and Development of the Millimeter-wave HEMT Devices (밀리미터파용 HEMT 소자 개발 및 제작을 위한 T-게이트 형성 전자빔 리소그래피 공정 모의 실험기 개발)

  • 손명식;김성찬;신동훈;이진구;황호정
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.5
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    • pp.23-36
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    • 2004
  • A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process has been developed for sub-0.l${\mu}{\textrm}{m}$ T-shaped gate formation in the HEMT devices for millimeter-wave frequencies. For the exposure process by electron to we newly and efficiently modeled the inner-shell electron scattering and its discrete energy loss with an incident electron for multi-layer resists and heterogeneous multi-layer targets in the MC simulation. In order to form the T-gate shape in resist layers, we usually use the different developer for each resist layer to obtain good reproducibility in the fabrication of HEMT devices. To model accurately the real fabrication process of electron beam lithography, we have applied the different developers in trilayer resist system By using this model we have simulated and analyzed 0.l${\mu}{\textrm}{m}$ T-gate fabrication process in the HEMT devices, and showed our simulation results with the SEM observations of the T-shaped gate process.