• Korean Journal of Mineralogy and Petrology
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• v.35 no.3
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• pp.273-281
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• 2022

Mantle heterogeneity is closely related to the distribution and circulation of volatile components in the Earth's interior, and the behavior of volatiles in the mantle strongly influences the rheological properties of silicate rocks. In mantle xenoliths, these physicochemical properties of the upper mantle can be recorded in the form of microstructures and fluid inclusions. In this paper, I summarized and reviewed the results of previous studies related to the characteristics of microstructures and fluid inclusions from peridotite xenoliths beneath the Rio Grande Rift (RGR) in order to understand the evolution and heterogeneity of upper mantle. In the RGR, the mantle peridotites are mainly reported in the rift axis (EB: Elephant Butte, KB: Kilbourne Hole) and rift flank (AD: Adam's Diggings) regions. In the case of the former (EB and KB peridotites), the type-A lattice preferred orientation (LPO), formed under low-stress and low-water content, was reported. In the case of the latter (AD peridotites), the type-C LPO, formed under low-stress and high-water content, was reported. In particular, in the case of AD peridotites, at least two fluid infiltration events, such as early (type-1: CO₂-N₂) and late (type-2: CO₂-H₂O), have been recorded in orthopyroxene. The upper mantle heterogeneity recorded by these microstructures and fluid inclusions is considered to be due to the interaction between the North American plate and the Farallon plate.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.29-32
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• 2010

The neutron capture cross section of $^{197}Au$ has been measured relative to the $^{10}B(n,{\gamma})$ standard cross section by the neutron time-of-flight(TOF) method using a 46-MeV electron linear accelerator(linac) at the Research Reactor Institute, Kyoto University(KURRI). In order to experimentally prove the result obtained, the supplementary cross section measurement has been made from 0.1 eV to 10 keV using the Kyoto University Lead slowing-down spectrometer (KULS) coupling to the linac. The relative measurement by the TOF method has been normalized to the reference value(24.5 b) at 1 eV. The evaluated capture cross sections in JENDL/D-99 Dosimetry have been compared with the current measurements by the KULS experiments.

• Journal of the Korean Society of Radiology
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• v.7 no.6
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• pp.415-418
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• 2013

Thermoluminescent dosimeter utilizes the fact that when irradiated specimen is heated up, some part of the absorbed energy is emitted from the specimen as light with longer wavelength. This research aims at analyzing the glow curves of four TLD-100 exposed to a magnetic field and those of other four TLD-100 not exposed to one by treating them with heat and irradiating them, which are commonly used as thermoluminescent dosimeter, in the same condition. As the result of the experiment, regarding the electrons captured by irradiation, some of the electrons of lower traps were combined with positive holes of valence band through the exposure to a magnetic field, and the peak size decreased by 48%. The reduction in the size of the lower traps caused the TLD-100 exposed to a magnetic field to display a low level of dose. In addition, low traps estimated activation energies are 1.6 eV and 1.5 eV.

• Journal of IKEEE
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• v.18 no.4
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• pp.620-624
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• 2014

In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.917-919
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• 2009

본 연구에서는 산화막 두께에 따른 20nm 이하 MOSFET의 전류-전압 특성 곡선 분석하였다. 산화물 내의 등가 포획 전하는 가우시안 함수를 사용하였다. 채널의 길이가 20nm 이하인 LDD MOSFET를 설계하여 사용하였고, 소자를 시뮬레이션 하기 위하여 실리콘 공정 디바이스 시뮬레이터인 MicroTec의 SemSim을 사용하였다. SemSim은 디바이스 시뮬레이터로써 입력 바이어스에 의해 공정 시뮬레이션인 SiDif와 디바이스 조립인 MergIC에 의해 소자를 시뮬레이션 한다. 산화막의 두께를 2nm, 3nm, 4nm로 시뮬레이션 한 결과 산화막의 두께가 얇아짐에 따라 드레인에 흐르는 전류가 증가함을 알 수 있었다.

• Electronics and Telecommunications Trends
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• v.30 no.2
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• pp.22-31
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• 2015

양자시스템을 모사하기 위한 양자컴퓨터의 가능성이 논의된 이후 약 30년이 지난 현재, 물리학 실험실에만 국한했던 양자역학은 정보이론, 보안, 통신, 컴퓨팅 등 기존 정보통신분야와의 결합을 통해 응용 가능성을 보여주는 연구가 진행되었고 통신분야에서는 절대 보안성을 가진 양자키 분배 시스템을 사용한 암호통신장비가 판매되고 있는 등 가시적 성과를 내고 있다. 또한, 컴퓨팅분야에서는 이온포획, 초전도, 스핀트로닉스 등 여러 가지 물리현상을 이용한 큐빗의 가능성을 보여주고 있으며 양자컴퓨팅 알고리즘 및 적용분야에 대한 연구가 진행 중이어서 멀지 않은 장래에 고전 컴퓨터보다 적어도 다항식적 속도향상을 갖는 양자컴퓨터가 등장할 전망이다. 본고에서는 선진국에서 진행되고 있는 양자통신 및 양자컴퓨팅 관련한 기술개발 동향을 소개하고자 한다.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.204-207
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• 1996

태양의 광에너지를 전기에너지로 변환하는 태양전지의 재료는 현재 무기반도체가 주를 이루고 있지만 최근 유기반도체가 재료자체 물성의 연구진전과 더불어 태양전지로서 개발가능성이 논하여 지고 있다. 한편 유기반도체의 장점은 1)박막으로 제작이 용이하고 2)대량생산에 의한 저가제조가 가능하며 3)경량화를 할 수 있고 4)그 기능의 다양성을 줄 수 있다는 것이다. 또한 단점은 캐리어 트랩 밀도가 커서 반송자(carrier)의 수명과 이동도가 작고 확산길이도 짧기 때문에 광수집 효율이 매우 낮아 광전변환효율이 낮다는 것이다. 또한 일반적으로 유기반도체는 저항율이 커서 오옴성 접촉이 어렵고 입사광 강도의 증대에 따라 변환효율이 감소하는것도 큰 문제로 되어있다. 따라서 본고에서는 지금까지 유기반도체를 사용한 태양전지의 원리 및 제조기술을 간단히 살펴보고 특성과 연구동향등을 분석하여 앞으로 유기반도체 태양전지의 나아가야할 방향을 찾아보고자 한다.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.549-552
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• 1998

Recently, the gate oxide damage induced by the plasma processes has been one of the most significant reliability issues as the gate oxide thickness falls below 10 nm. The process-induced damage was studied with the metal antenna test structures. In addition to the electron trapping, the hole trapping in a 10 nm thick gate oxide due to the plasma-induced charging was observed in the NMOS's with a metal antenna. The hole trapping gave rise to the decrease of the transconductance (gm) similarly to the case of the electron trapping, but to the extent much less than the electron trapping. It would be because the electrical stress that the plasma-induced charging forced to the gate oxide for the devices with the hole trapping was much smaller than for those with the electron trapping. This hypothesis was strongly supported by the measured characteristics of the Fowler-Nordheim current in the gate oxide.