• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.353-353
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• 2015

실용금속 중 가장 가볍고, 비강도 및 방진성 등이 우수한 Mg을 증발금속으로 하여 무공해 PVD방법중 하나인 진공증착(Vacuum Deposition)법으로 기판(Al 및 Zn기판) 상에 박막을 제작하였다. 부식환경 중 강판상의 마그네슘막은 약 -1300mV/SCE의 비한 전위값을 가지며 $Mg{\rightarrow}Mg^{2+}+2e^-$ 반응에 의해 기판의 부식을 방지한다. 본 실험에서 제작한 Mg막의 부식시험 결과에 의하면 졀정입이 미세한 입상정의 몰포로지가 내식성이 가장 우수한 것으로 나타났다. 여기서 Mg코팅 제작 프로세스에 대한 기초적인 설계 지침을 제시하였고 기존의 강판에서 대두되는 내식성에 대한 문제를 보완할 수 있을 것이라 사료된다.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.15-17
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• 2009

초전도선재를 사용한 전력기기에서 발생하는 교류손실은 전력기기의 효율을 저하시키기 때문에 매우 중요한 요소이다. 본 논문에서는 교류손실을 저감시키기 위해 분할형 초전도 연속전위도체(Continuously Transposed Coated Conductor, CTCC)를 제작하였으며, 제작된 분할형 CTCC에 교번자장을 인가하였을 때 발생하는 교류손실을 측정하였다. 측정 결과 분할된 필라멘트 수와 선재의 적층수가 증가함에 따라 교류손실 값의 변화 패턴을 확인하였다. 또한, 분할형 CTCC에 가해지는 외부교번 자장의 인가 각도에 따른 자화손실을 측정하여 그 경향을 확인하였다.

• Journal of the Korean Chemical Society
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• v.56 no.6
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• pp.731-738
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• 2012

The purpose of this study is to analyze the understandings of science high school students on the conception of chemical cell in relation to chemical equilibrium from the microscopic viewpoint at molecular level through questionnaires and follow-up interviews. The results show that they have high understandings on the chemical equilibrium states in the electrochemical cell and on the redox reaction taking place simultaneously when a metal electrode is immersed in the metal ion solution. However, they do not fully comprehend the development of electrical potential difference, electron movement, electrode potential measurement in the half-cells, and calculation of the net cell voltage between anode and cathode in the chemical cell because of difficulties in the microscopic understanding the interaction on the interface at the electrode and the electrolyte solution.

• Journal of the Korean Chemical Society
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• v.44 no.2
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• pp.115-119
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• 2000

A PVC membrane electrode based on upper-rim calix[4] crown as ionophore was prepared using dioctyl sebacate (DOS) as a plasticizer. The potential response of this membrane electrode to alkali, alka-line earth and transitionmetal metal cations were examined. This membrane electrode exhibited a Nernstian response to $10^{-6}{\sim}10^{-2}M\;Pb(NO_3)_2$ with a slope ot 27.0 mV/decade. Its response time ($t_{90}$) was 10s and it could be used for at least 2 months. Also, the potential was maintained constantly in the rage of ph $2.0{\sim}12$.

• Journal of the Korean Chemical Society
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• v.42 no.5
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• pp.531-538
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• 1998

The ion selective membrane electrode made of calix[4]arene-based host 1 as ionophore, poly (vinyl chloride) (PVC) as matrix and dioctylsebacate (DOS) as a plasticizer was studied. The potential responses of this membrane electrode to alkali, alkaline earth and transition metal cations were investigated. Especially this membrane electrode was turned out to be affinitive for $Pb^{2+}$ in the deionized water. It was observed that the response was linear in the concentration range from $1.0 \times 10^{-1} M to 1.0 \times 10^{-6} M of Pb^{2+}$ and its slope (26.5 mV/decade) was near to the sub-Nernstian response in deionized water. Also, the potential was maintained constantly in the range of pH $4.00 \sim 12.00$, which supports the potential usage as $Pb^{2+}$ affinitive electrode in the deionized water.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.112-118
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• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.577-580
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• 2012

RRA Notification No.2010-36 suggests the 3-point method(fall-of-Potential) using 2 auxiliary poles only as a test method of earth resistance. However this method needs to much space to install auxiliary poles so it is very difficult to measure the earth resistance in spots such as a mountain district, rocky district. So, we have analyzed the methods of 2-point method and loop resistance method in IEEE std. 81 and ITU-handbook(Earthing and Bonding) and applied these methods in test bed with 3-point method. In this paper we have compared and analyzed the earth resistance value using these 3 methods.

• Applied Microscopy
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• v.36 no.3
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• pp.155-163
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• 2006

The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.233-236
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• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.200.2-200.2
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• 2015

모바일 기기의 성장세로 인해 낸드 플래시 메모리에 대한 수요가 급격히 증가하면서 높은 집적도의 소자에 대한 요구가 커지고 있다. 그러나 소자의 크기가 작아지면서 비례 축소로 인한 게이트 누설 전류, 셀간 간섭, 단 채널 효과 등과 같은 문제들이 발생한다. 이에 따라 제한된 공간에서의 coupling ratio값이 증가해야 하는 문제가 주목 받으면서 얇은 절연층에 대한 많은 연구가 진행되고 있다. 본 연구에서는 절연층 구조를 비대칭으로 사용한 낸드 플래시 메모리의 누설전류의 변화와 coupling ratio값의 변화를 관찰하였다. 비대칭 절연층 구조를 가지는 낸드 플래시 메모리의 전기적 특성을 멀티 오리엔테이션 모델을 포함한 3차원 TCAD 시뮬레이션을 이용하여 계산하였다. 메모리 소자가 각 셀 간의 절연층을 가질 때 낮은 셀 간 간섭과 높은 coupling ratio 값을 가진다. 절연층의 구조 높이와 방향의 두께가 증가 할수록 게이트 누설 전류의 값이 크게 줄어들었다. 또한 비대칭 절연층 구조의 플래시 메모리에서 플로팅 게이트의 on-current 레벨과 전위 값이 기존의 플래시 메모리에 비해 크게 나타나는 시뮬레이션 결과값을 관찰하였다. 비대칭 절연층 구조를 가지는 플래시 메모리는 게이트 누설 전류에 영향을 미치는 절연층 주위의 전기장의 값이 기존 구조에 비해 약 30% 감소하였고 같은 프로그램 동작 전압에서 플로팅 게이트에 주입되는 전하의 양 또한 증가하였다. 이 연구 결과는 낸드 플래시 메모리 소자에서 게이트 누설 전류 문제를 감소시키고 프로그램 특성을 증진시키는데 도움이 된다.